ic for driver get 14pin
Abstract: EL5164 EL5165 EL5167 EL5462 EL5462IS
Text: EL5462 Data Sheet February 14, 2005 500MHz Low Power Current Feedback Amplifier FN7492.0 Features • 500MHz -3dB bandwidth The EL5462 is a current feedback amplifier with a bandwidth of 500MHz which makes this amplifier ideal for today’s high speed video and monitor applications.
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EL5462
500MHz
FN7492
EL5462
14-pin
ic for driver get 14pin
EL5164
EL5165
EL5167
EL5462IS
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Untitled
Abstract: No abstract text available
Text: EL5462 Data Sheet February 14, 2005 500MHz Low Power Current Feedback Amplifier FN7492.0 Features • 500MHz -3dB bandwidth The EL5462 is a current feedback amplifier with a bandwidth of 500MHz which makes this amplifier ideal for today’s high speed video and monitor applications.
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EL5462
500MHz
FN7492
EL5462
000V/Â
14-pin
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MAX4112EUA
Abstract: MAX4113 MAX4113ESA MAX4112 MAX4112ESA
Text: 19-0443; Rev 0; 9/95 500MHz, Low-Power, Current-Mode Feedback Amplifiers _Applications Broadcast and High-Definition TV Systems _Features ♦ 500MHz -3dB Bandwidth MAX4112 275MHz -3dB Bandwidth (MAX4113)
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500MHz,
500MHz
MAX4112)
275MHz
MAX4113)
30MHz
300MHz
MAX4112EUA
MAX4113
MAX4113ESA
MAX4112
MAX4112ESA
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34B DBM
Abstract: carbon composition resistors Video Op Amps 300MHz MAX4112ESA MAX4112EUA MAX4117 MAX4118 op closed-loop
Text: 19-0440; Rev 1; 8/96 KIT ATION EVALU BLE AVAILA Single/Dual, 500MHz, Low-Power, Current-Mode Feedback Amplifiers _Applications Broadcast and High-Definition TV Systems _Features ♦ 500MHz -3dB Bandwidth MAX4112/MAX4117
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500MHz,
500MHz
MAX4112/MAX4117)
275MHz
MAX4113/MAX4118)
30MHz
300MHz
34B DBM
carbon composition resistors
Video Op Amps 300MHz
MAX4112ESA
MAX4112EUA
MAX4117
MAX4118
op closed-loop
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2sc2026
Abstract: transistor 2sc2026 vhf high gain transistor high power npn UHF transistor 2sc2026 transistor data NPN rf transistor "rf transistor" RF POWER TRANSISTOR NPN
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION •Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF
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2SC2026
500MHz
500MHz;
2sc2026
transistor 2sc2026
vhf high gain transistor
high power npn UHF transistor
2sc2026 transistor data
NPN rf transistor
"rf transistor"
RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ICS8427-02 ICS8427-02 500MHZ, LOWIntegrated JITTER LVCMOS/CRYSTAL-TOCircuit Systems, Inc. SYNTHESIZER LVHSTL FREQUENCY 500MHZ, LOW JITTER LVCMOS/CRYSTAL-TO-LVHSTL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS8427-02 is a general purpose, six
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500MHZ,
ICS8427-02
625MHz
500MHz.
200MHz
6667MHz
125kHz
199707558G
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MITSUBISHI frequency counter ics
Abstract: No abstract text available
Text: MITSUBISHI ICs COMMUNICATION M64812GP Preliminary Notice;This is not a final specification. some parametric limits are subject to change. 2.0GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER DESCRIPTION The M64812GP is a 2.0GHz/500MHZ band twosystem one-chip PLL frequency synthesizer .
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M64812GP
0GHz/500MHz
M64812GP
500MHz,
MITSUBISHI frequency counter ics
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BF5Z
Abstract: SBF-5089 hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89
Text: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar
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SBF-5089
500MHz,
OT-89
EDS-103413
SBF5089"
SBF5089Z"
BF5Z
hemt Ee
marking ee hemt
SBF 5089
SBF5089
SBF-5089Z
SBF50
sbf5089z
marking code 827 sot89
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M64811AGP
Abstract: TCXO 19.2MHZ MITSUBISHI frequency counter ics
Text: MITSUBISHI ICs COMMUNICATION M64811AGP 1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M64811AGP is a 1.1GHz/500MHz band two-system one-chip PLL frequency synthesizer . Using a high performance Bi-CMOS process , the product
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M64811AGP
1GHz/500MHz
M64811AGP
500MHz
TCXO 19.2MHZ
MITSUBISHI frequency counter ics
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NTE23
Abstract: No abstract text available
Text: NTE23 Silicon NPN Transistor Ultra High Frequency Amp Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz D High Power Gain: Gpe 15dB Typ. @ f = 500MHz D High Cutoff Frequency: fT = 2.0GHz Typ
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NTE23
NTE23
500MHz
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Untitled
Abstract: No abstract text available
Text: £/ ne. ,O I TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MMBR920L Silicon NPN RF Transistor DESCRIPTION • Low Noise NF= 2.4dB TYP. @ f= 500MHz • High Gain SOT- 2 3 package I Gpe= 15dB TYP. @ f= 500MHz
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MMBR920L
500MHz
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EL5162
Abstract: EL5163 EL5164 EL5167 EL5262 EL5263 EL5362 FN7388 F 5 Ld SOT-23 MDP0038
Text: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet March 16, 2007 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed
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EL5162,
EL5163,
EL5262,
EL5263,
EL5362
500MHz
EL5162
EL5163
EL5164
EL5167
EL5262
EL5263
EL5362
FN7388
F 5 Ld SOT-23 MDP0038
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FN7388
Abstract: EL5163IWZ-T7A EL5362IUZ-T7 so8 150 MIL EL5162 EL5163 EL5164 EL5167 EL5262 EL5263
Text: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet January 4, 2008 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed
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EL5162,
EL5163,
EL5262,
EL5263,
EL5362
500MHz
FN7388
EL5163IWZ-T7A
EL5362IUZ-T7
so8 150 MIL
EL5162
EL5163
EL5164
EL5167
EL5262
EL5263
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hemt Ee
Abstract: InP HBT transistor low noise SBF-4089 SBF-4089Z RF POWER TRANSISTOR 70mhz
Text: SBF-4089 Z SBF-4089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-4089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar
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SBF-4089
500MHz,
OT-89
EDS-103412
SBF4089"
SBF-4089Z"
hemt Ee
InP HBT transistor low noise
SBF-4089Z
RF POWER TRANSISTOR 70mhz
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Untitled
Abstract: No abstract text available
Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF5089Z
SBF5089ZDC
500MHz,
OT-89
SBF5089Z
DS111011
SBF5089ZSQ
SBF5089ZSR
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HBT transistor
Abstract: SBF4089ZPCK1
Text: SBF4089Z SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF4089ZDC
500MHz,
SBF4089Z
OT-89
SBF4089Z
operati40
DS111011
HBT transistor
SBF4089ZPCK1
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Untitled
Abstract: No abstract text available
Text: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet January 4, 2008 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed
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EL5162,
EL5163,
EL5262,
EL5263,
EL5362
500MHz
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BDA SOT23-5
Abstract: FN7388 EL5164 EL5167 EL5262 EL5263 EL5362 EL5162 EL5163 INTERSIL marking 5 sot
Text: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet May 7, 2007 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed
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EL5162,
EL5163,
EL5262,
EL5263,
EL5362
500MHz
BDA SOT23-5
FN7388
EL5164
EL5167
EL5262
EL5263
EL5362
EL5162
EL5163
INTERSIL marking 5 sot
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Untitled
Abstract: No abstract text available
Text: SBF4089Z SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF4089Z
SBF4089ZDC
500MHz,
OT-89
SBF4089Z
DS111011
SBF4089ZSQ
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SBF-5089Z
Abstract: InP transistor HEMT InP HBT transistor low noise
Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF5089ZDC
500MHz,
SBF5089Z
OT-89
SBF5089Z
DS111011
SBF5089ZSQ
SBF-5089Z
InP transistor HEMT
InP HBT transistor low noise
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICs COMMUNICATION M64811AGP 1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M64811AGP is a 1.1GHz/500MHz band two-system one-chip PLL frequency synthesizer. Using a high performance Bi-CMOS process, the product
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M64811AGP
1GHz/500MHz
M64811AGP
500MHz
GGSS37Ã
M5M4V4160J
4194304-BIT
262144-WORD
16-BIT)
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le2m
Abstract: No abstract text available
Text: NPN SILICON PLANAR RF TRANSISTOR IS S U E 2 - M A R C H 94 FEATURES * * High fT, 1.3GHz Low noise < 5dB at 500MHz * Power output at 500MHz >175mW ABSOLUTE M A XIM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage V CBO Collector-Emitter Voltage VALU E
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500MHz
175mW
0Q1Q354
001G35S
le2m
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES □ FEATURES DC to >500MHz Operation Differential ±1V Full Scale Inputs Differential ±4mA Full Scale Output Current Low Distortion {<0.05% for OdBm Input Supply Voltages from ±4V to ±9V Low Power 280mW typical at VS= ± 5V ) 500MHz Four-Quadrant Multiplier
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500MHz
280mW
AD834
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES □ FEATURES DC to >500MHz Operation Differential ±1V Full Scale Inputs Differential ±4mA Full Scale Output Current Low Distortion <0.05% for OdBm Input Supply Voltages from ±4V to ±9V Low Power (280mW typical at VS= ±5V ) 500MHz Four-Quadrant Multiplier
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500MHz
280mW
AD834
AD834
AD840
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