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    SEMIKRON SKM 500GA123D

    Igbt Module, 1.2Kv, 500A, Semitrans 4; Continuous Collector Current:500A; Collector Emitter Saturation Voltage:3V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM 500GA123D
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    SEMIKRON SKM 500 GA 123 DS

    Transistor, igbt Power Module, independent,1.2Kv V(Br)Ces,550A I(C) |Semikron SKM 500 GA 123 DS
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    Newark SKM 500 GA 123 DS Bulk 12
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    500GA123D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    aa 118 diode

    Abstract: SKM500GA123DS
    Text: SKM 500GA123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*9 :5 .< .   SEMITRANSTM4 IGBT Modules SKM 500GA123D SKM 500GA123DS Features                                


    Original     		PDF 500GA123D 500GA123D 500GA123DS aa 118 diode SKM500GA123DS

    SKM500GA123DS

    Abstract: inverse
    Text: SKM 500GA123D . 4 05 6*     # Absolute Maximum Ratings Symbol Conditions IGBT *7 .8 4 05 6* &* .8 4 /51 6* &*< /011  511 + . 4 :1 6* ;01 + :11 + > 01  /1 B . 4 05 6* 511 + . 4 :1 6* C51 + :11 + C$11 + 511 + ' ;1 DDDE /51


    Original     		PDF 500GA123D 500GA123DS SKM500GA123DS inverse

    SKM500GA123DS

    Abstract: No abstract text available
    Text: SKM 500GA123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*9 :5 .< .   SEMITRANSTM4 IGBT Modules SKM 500GA123D SKM 500GA123DS Features                                


    Original     		PDF 500GA123D 500GA123D 500GA123DS SKM500GA123DS

    040820

    Abstract: SKM500GA123DS
    Text: SKM 500GA123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*9 :5 .< .   SEMITRANSTM4 IGBT Modules SKM 500GA123D SKM 500GA123DS Features                                


    Original     		PDF 500GA123D 500GA123D 500GA123DS 040820 SKM500GA123DS

    SKM500GA123DS

    Abstract: No abstract text available
    Text: SKM 500GA123D . 4 05 6*     # Absolute Maximum Ratings Symbol Conditions IGBT *7 .8 4 05 6* &* .8 4 /51 6* &*< /011  511 + . 4 :1 6* ;01 + :11 + > 01  /1 B . 4 05 6* 511 + . 4 :1 6* C51 + :11 + C$11 + 511 + ' ;1 DDDE /51


    Original     		PDF 500GA123D 500GA123DS SKM500GA123DS

    SKM500GA123DS

    Abstract: No abstract text available
    Text: SKM 500GA123D . 4 05 6*     # Absolute Maximum Ratings Symbol Conditions IGBT *7 .8 4 05 6* &* .8 4 /51 6* &*< /011  511 + . 4 :1 6* ;01 + :11 + > 01  /1 B . 4 05 6* 511 + . 4 :1 6* C51 + :11 + C$11 + 511 + ' ;1 DDDE /51


    Original     		PDF 500GA123D 500GA123DS SKM500GA123DS

    Untitled

    Abstract: No abstract text available
    Text: SKHI 10/12 R . Absolute Maximum Ratings Symbol Conditions H%;1( 7F E81& 4%& E8100 4%& h1./@5.(;) :15 $.55(K ,1(/B') 5+%4B+K 7&5./ ;%'&B( ,1(/B') J=78=N J01+ >a H B&* a H %&5./ (),)(N F./5./ 5)BV -.+)&/ F./5./ B,)+B') -.+)&/ J4Be_N I1()-/1+ )4%//)+ ,1(/B') ;)&;)


    Original     		PDF HM789 -145B/

    circuit diagram for igbt driver

    Abstract: molex 41791 semikron SKm 123D 123d transistor IGBT DRIVER SEMIKRON semikron SKHI 1200VIGBT 123D 2A mosfet igbt driver stage high power FERRITE TRANSFORMER
    Text: SKHI 10/12 Absolute Maximum Ratings Symbol Conditions VS Supply voltage primary Input signal voltage HIGH (for 15 V and 5 V input level) Output peak current Output average current (max.) Collector emitter voltage sense Rate of rise and fall of voltage (secondary


    Original     		PDF 200V-IGBT) circuit diagram for igbt driver molex 41791 semikron SKm 123D 123d transistor IGBT DRIVER SEMIKRON semikron SKHI 1200VIGBT 123D 2A mosfet igbt driver stage high power FERRITE TRANSFORMER

    DIN 17006

    Abstract: 123d transistor semikron IGBT SKHI10 semikron SKm 123D DRIVER IGBT SEMIKRON SKPC platine inverter semikron SKHI 22 123D 5v dc smps
    Text: SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Symbol VS ViH IoutPEAK IoutAVmax VCE dv/dt Visol IO Rgon min Rgoff min Qout/pulse Top Tstg Term Supply voltage primary Inputsignal voltage (HIGH) (for 15 V and 5 V input level) Output peak current Output average current (max.)


    Original     		PDF

    123D TRANSISTOR

    Abstract: SEMIKRON SKHI 65 TRANSISTOR 123D 2A mosfet igbt driver stage SKHI 65 Pulse Transformer semikron SKHI 22 semikron SKm 123D Intelligent Power Module semikron 500GA123D
    Text: SKHI 10/12 Absolute Maximum Ratings Symbol Conditions  ) ) ' &  &  I!    ,  #  # ,  #  # +/ + B ) # B )  / '  #7   ' # #   +#F@/ *    #   &#  


    Original     		PDF SKHI10 123D TRANSISTOR SEMIKRON SKHI 65 TRANSISTOR 123D 2A mosfet igbt driver stage SKHI 65 Pulse Transformer semikron SKHI 22 semikron SKm 123D Intelligent Power Module semikron 500GA123D

    Untitled

    Abstract: No abstract text available
    Text: SKHI 10/17 R . Absolute Maximum Ratings Symbol Conditions H%;1( 7F E81& 4%& E8100 4%& i1./@5.(;) :15 $.55(K ,1(/B') 5+%4B+K 7&5./ ;%'&B( ,1(/B') J=78=N J01+ >b H B&* b H %&5./ (),)(N F./5./ 5)BV -.+)&/ F./5./ B,)+B') -.+)&/ J4BgaN I1()-/1+ )4%//)+ ,1(/B') ;)&;)


    Original     		PDF HM789 -145B/

    skm 200 gb 122 d

    Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


    Original     		PDF

    123d transistor

    Abstract: semikron SKm 123D 123d transistor 123D DIN 17006 semikron SKHI 123D IGBT, 400A, 1200V(2) MATCHED 3 phase UPS block diagram using IGBT FERRITE TRANSFORMER asymmetrical igbt
    Text: SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Symbol VS ViH IoutPEAK IoutAVmax VCE dv/dt Visol IO Rgon min Rgoff min Qout/pulse Top Tstg Term Supply voltage primary Inputsignal voltage (HIGH) (for 15 V and 5 V input level) Output peak current Output average current (max.)


    Original     		PDF

    DIN7985

    Abstract: semibox DIN-7985 31949100 DIN7985-4 300f diodes C664
    Text: IFRMS maximum value for continuous operation, Tcase = 25 °C 664 A V IFAV (sin 180; Tcase = 85 °C; 50 Hz) 423 A SKKE 600 F 1000 SKKE 600 F 10 Preliminary Data 1200 SKKE 600 F 12 Symbol Conditions SKKE 600 F IFDC IFDC IFDC Tcase = 62 °C Tcase = 80 °C Tamb = 45 °C; Rthha = 0,05 °C/W


    Original     		PDF P16/300F) 500GA123D M6x16 DIN7985-4 M6x12 DIN7985 semibox DIN-7985 31949100 300f diodes C664

    IEC 974-1

    Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


    Original     		PDF

    123D TRANSISTOR

    Abstract: Intelligent Power Module semikron 2A mosfet igbt driver stage semikron SKHI 22 SEMIKRON SKHI 65 SKHI 65 TRANSISTOR 123D semikron SKm 123D molex 41791 SKHI10
    Text: SKHI 10/17 R . Absolute Maximum Ratings Symbol Conditions ) ) ) ' &  &  J!    ,  #  # ,  #  # +/ + C ) # C )  / '  #7   ' # #   +#HB/ *    #   &#


    Original     		PDF SKHI10 123D TRANSISTOR Intelligent Power Module semikron 2A mosfet igbt driver stage semikron SKHI 22 SEMIKRON SKHI 65 SKHI 65 TRANSISTOR 123D semikron SKm 123D molex 41791 SKHI10

    SKM 400GB062D

    Abstract: 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


    Original     		PDF 300GD063D 125GD127D 85GD127D 350GD063DM 250GD128D 350GD128DM 400GD063D 400GD128D 500GD128DM SKM 400GB062D 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31

    SKM200GB122D

    Abstract: skm 191 semikron SKHI 22 AR semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKHI 21 AR SKM300GB123D 062d skm 200 123d transistor SKM200GB101D
    Text: 6. SEMITRANS IGBT Module Insulated Gate Bipolar Transistors Merkmale Typische Anwendungen • MOS-Eingang (spannungsgesteuert) • Motorsteuerung Drehstromantriebsumrichter • N-Kanal • Gleichstrom-Servo- und Roboter-Antriebe • Reihe mit niedriger Sättigungsspannung erhältlich


    Original     		PDF

    123d transistor

    Abstract: SKHI 65 SEMIKRON SKHI 65 2A mosfet igbt driver stage semikron SKHI 22 skm75gal123d SKM150GAL161D Intelligent Power Module semikron
    Text: SKHI 10/12 R . Absolute Maximum Ratings Symbol Conditions ) ) ) ' &  &  I!    ,  #  # ,  #  # +/ + B ) # B )  / '  #7   ' # #   +#F@/ *    #   &#


    Original     		PDF SKHI10 123d transistor SKHI 65 SEMIKRON SKHI 65 2A mosfet igbt driver stage semikron SKHI 22 skm75gal123d SKM150GAL161D Intelligent Power Module semikron

    123d transistor

    Abstract: mosfet 700V 400A 100Khz transistor 123D 123d H BRIDGE inverters circuit diagram using igbt semikron SKm 123D FERRITE TRANSFORMER 2A mosfet igbt driver stage igbt 400A semikron SKHI 22
    Text: 6 0,'5,9(5Š $EVROXWH 0D[LPXP 5DWLQJV 7D  ƒ& 6\PERO 96 9L+ ,RXW3($. ,RXW$9PD[ 9&( GYGW 9LVRO ,2 5JRQ PLQ 5JRII PLQ 4RXWSXOVH 7RS 7VWJ 7HUP 6XSSO\ YROWDJH SULPDU\ ,QSXWVLJQDO YROWDJH +,*+ IRU  9 DQG  9 LQSXW OHYHO 2XWSXW SHDN FXUUHQW 2XWSXW DYHUDJH FXUUHQW PD[


    Original     		PDF

    DIODE T25 4 EO

    Abstract: DIN-7985 DIN7985 M6x12 semibox
    Text: se MIKR d n V r sm If r m s V rrm sin 180', Tease —103 °C‘, 50 Hz 290 A If a v V 1000 SKKE 600 F 10 1200 SKKE 600 F 12 SKKE 600 F I fd c I fd c Tease Tam b = 92 °C = 45 °C; I fd c Tam b = 45 °C; Tvj Tvj i2t Qrr R thha = 0,15 K/W (1/6 P16/300F) 7 000 A


    OCR Scan     		PDF P16/300F) KEaOOf12 DIODE T25 4 EO DIN-7985 DIN7985 M6x12 semibox

    SKM100GB101D

    Abstract: SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D 40GD101D SKM150GB122D
    Text: s e m ik r d n SEMITRANS IGBT Modules 1000 to 1700 V Cross Reference List Previous to Actual Types 1 Case width) Sixpacks SEMITRANS 6 (45 mm) DUALS SEMITRANS 2 (34 mm) SK-BOOK ’90 / SUPPL. 91 1989-1991 SKM 15GD100D SK-BOOK ’92/'93 1992-1995 SKM 22GD101D


    OCR Scan     		PDF 15GD100D 25GD100D 22GD101D 22GD121D 40GD101D 40GD121D 40GB101D 40GB121D 50GB101D 50GB121D SKM100GB101D SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D SKM150GB122D