Untitled
Abstract: No abstract text available
Text: GEC P LE SS EY [ S E M I C O N D U C T O R S I 3 0 2 6 - 1.0 ZNREF040 4V LOW POWER PRECISION REFERENCE SOURCE The ZNREF040 is a m onolithic integrated circuit providing a precise stable reference voltage of 4.01V at 500fjA. The c ircu it features a knee current of 150/jA and operation
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ZNREF040
ZNREF040
500fjA.
150/jA
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62004AP
Abstract: 62002ap 62003AP 62004A TD62003AP 62003a
Text: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62001AP/AF TD62002AP/AF TD62003AP/AF TD62004AP/AF 7-channel Darlington Sink Driver The TD62001AP/AF Series features high-voltage, high current Darlington drivers composed of seven NPN Darlington pairs.
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TD62001AP/AF
TD62002AP/AF
TD62003AP/AF
TD62004AP/AF
TD62001AP
TD62002AP
TD62003AP
TD62004AP
500mA
62004AP
62002ap
62003AP
62004A
62003a
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Untitled
Abstract: No abstract text available
Text: H iE X28C010 1M K 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V PP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms
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X28C010
120ns
500fjA
X28C010
fabricated2-8634
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Samsung 546
Abstract: marking JB Transistor 547 MMBT5088 100khz 5v transistor npn transistor C 548 B transistor 548 T600 JB marking transistor JB SOT23 transistor
Text: SAMSUNG INC_ SEMICONDUCTOR MMBT5088 IME D | 7 ^ 4 1 4 5 Ü00727b T § NPN EPITAXIAL SILICON TRANSISTOR T-^q-iq - LOW NOISE TRANSISTOR ~ SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MMBT5088
000727b
OT-23
100fjA.
L4142
Samsung 546
marking JB
Transistor 547
MMBT5088
100khz 5v transistor npn
transistor C 548 B
transistor 548
T600
JB marking transistor
JB SOT23 transistor
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Untitled
Abstract: No abstract text available
Text: 80C86/883 2} HARRIS CMOS 16 Bit Microprocessor ju n e 19 8 9 Features D escription • T h is C irc u it is P ro c e s s e d in A c c o rd a n c e to M il-Std 8 8 3 an d is F u lly C o n fo rm an t U n d e r the P ro v isio n s of P arag rap h 1 .2 .1 . The Harris 8 0 C 86/8 83 high performance 16 bit CM O S
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80C86/883
16-Bit
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Untitled
Abstract: No abstract text available
Text: EL5221C T X * « —! T 'I I T T F » ¥ î* ~ ï _ U - « ^ f T . ^ / I . ,/._ . _ . ^ | > . . /Y *rLL^ UUOl I2M UZ KOÜ-tO-KüU lnpUt‘ JUtpUt BUjJBT HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features General Description • 12M H z-3dB bandwidth The EL5221C is a dual, low power, high voltage rail-to-rail input-output buffer. O perating on supplies ranging from 5V to 15V, w hile
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EL5221C
EL5221C
12MHz
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Untitled
Abstract: No abstract text available
Text: r a E O M a m im f r r m i N LTC1348 L TECHNOLOGY 3 3.3V Low Power RS232 Driver/5-Receiver Transceiver Decem ber 1993 K O T U IK S D C S C ftlP T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT C 13 4 8 is a 3-driver/5-receiver R S232 transceiver with very low supply current. The charge pum p only
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LTC1348
RS232
500pA
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flyback transformer construction
Abstract: THOMSON B2 ferrite material MOSFET IRF 540 AS A SWITCH AN4001 orega transformer SMT4 E-4215A Thomson capacitors lcc 28V to 110V transformer c4460 MC44603
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document as AN4001/D A N 4 0 0 1 /D MC44603 in a 110W output SMPS application 80-140Vrms and 180-280Vrms mains voltages by Joel Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France
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AN4001/D
MC44603
80-140Vrms
180-280Vrms
110Vrms
220Vrms
MC44603.
XM41-2447
flyback transformer construction
THOMSON B2 ferrite material
MOSFET IRF 540 AS A SWITCH
AN4001
orega transformer SMT4
E-4215A
Thomson capacitors lcc
28V to 110V transformer
c4460
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Untitled
Abstract: No abstract text available
Text: Ultra High Efficiency 93-95% Ultra Small Size, Step-Down Non-lsolated Type DC-DC Converter Bellnix 40 watt BSl-POWER Series BSI-40W Series is an ultra small size, light, and large capacity non-isolated type step-down DC-DC converter, which has achieved ultra high efficiency 93-95% by the latest synchronous rectification circuit technology. It has also achieved the surprising 40W
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BSI-40W
Over-Curr000hrs.
1000hrs
100cycles
30min.
1000hrs.
10sec.
5-10Hz
10-55Hz
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cl7663a
Abstract: EV-KIT max713 Transformer 220 to16v MAX722 MAX717 33z3 Y711 0-9v 500ma transformer MAX753
Text: Power Management Multi-Function Supplies MAX845 750mW isolated transfoimer driver High-Side MOSFET Drivers MAX620 (quad driver) MAX622 (VouT = V|N + 11V) t * MAX848 (2.7V to 5V step-up, with A/D battery monitoring, 200mA, 3.3V out) MAX849 (2.7V to 5V step-up,
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MAX845
750mW
MAX620
MAX622
MAX890L
90mfl,
MAX891L/892L
150/300mQ,
500/250mA,
MAX894L/895L
cl7663a
EV-KIT max713
Transformer 220 to16v
MAX722
MAX717
33z3
Y711
0-9v 500ma transformer
MAX753
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MAX680CPA
Abstract: MAX680EPA MAX681 MAX666 MAX680 MAX680CSA MAX680EJA MAX680ESA
Text: +5V to +10V Voltage C onverters G en e ra l D e sc rip tio n The MAX680/MAX681 are m onolithic CM OS dual charge pum p voltage converters; th a t.p ro vid e ± 10 V outputs from a +5V input voltage. The MAX680/MAX681 provide both a positive stepup charge pum p to develop
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MAX680/MAX681
MAX681
MAX680
typically150a
MAX680/MAX681.
MAX664
tL07r
146------SV\
MAX680CPA
MAX680EPA
MAX666
MAX680CSA
MAX680EJA
MAX680ESA
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NPN MATCHED PAIRS
Abstract: LC 5121 DI-2060 NPN pnp MATCHED PAIRS di4044
Text: TRANSISTOR CHIPS 4 < 100% Probe Tested to These Parameters @ 25°C Matched C haracteristic* l c= 1 0 ^ A ; Vce=5V DC Gain VBE Dlff. V b e i - V bej Ratio hFEi/hFE2 mV Max. VcBO Volta Min. @ lc” 1 0 pA l E= 0 VcEO Volts Min. @ lc — 1 mA 18=0 V EB0 Volts Min.
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lc-10,
VCE-10V
NPN MATCHED PAIRS
LC 5121
DI-2060
NPN pnp MATCHED PAIRS
di4044
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PI6C105
Abstract: No abstract text available
Text: PRELIM INARY PRELIM f j j P iiiiiiiiiii E R INUMIMI I C O MMMMMI M PI6C105 IMMMMM MMMMMI . Precision Clock Synthesizer for Mobile PCs Description Features Two copies of CPU clock with VDD of 2.5V±5%
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28-pin
PI6C105
PI6C105
PS8316
PI6C105H
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