Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2004. INCH-POUND MIL-PRF-19500/500D 5 November 2003 SUPERSEDING MIL-S-19500/500C 8 July 1997 PERFORMANCE SPECIFICATION * SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,
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MIL-PRF-19500/500D
MIL-S-19500/500C
1N5555
1N5558,
1N5907,
1N5629A
1N5665A,
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 1997 INCH-POUND MIL-PRF-19500/500C 8 July 1997 SUPERSEDING MIL-S-19500/500B 19 January 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR
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MIL-PRF-19500/500C
MIL-S-19500/500B
1N5555
1N5558,
1N5907,
1N5629A
1N5665A
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inverters
Abstract: inverter welder schematic diagram inverter welder schematic spot welder circuit diagram inverter welder schematic 1 phase inverter welder 4 schematic CORNELL DUBILIER Aluminum Electrolytic Capacitor inverter 3kw schematic capacitor welder schematic pa capacitor 400v
Text: Selecting and Applying Aluminum Electrolytic Capacitors for Inverter Applications Sam G. Parler, Jr. Cornell Dubilier Abstract— Aluminum electrolytic capacitors are widely used in all types of inverter power systems, from variable-speed drives to welders to UPS units. This paper
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682T400D
inverters
inverter welder schematic diagram
inverter welder schematic
spot welder circuit diagram
inverter welder schematic 1 phase
inverter welder 4 schematic
CORNELL DUBILIER Aluminum Electrolytic Capacitor
inverter 3kw schematic
capacitor welder schematic
pa capacitor 400v
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FNFM-TTL-40
Abstract: t2222 500C FNFM-TTL-10
Text: • • • • • • T2L FAST input and output Pulse width detection stable and precise 14-pin DIP package pulse width recognition is maintained as shown in the accompanying part number table, when tested under the "Test Conditions" shown. Temperature coefficient is less than ±800ppm/0C over the operating
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14-pin
800ppm/0C
200ns
cha-TTL-150
FNFM-TTL-175
FNFM-TTL-200
C/091594R
FNFM-TTL-40
t2222
500C
FNFM-TTL-10
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RN1A23D50
Abstract: RN2A48D25 RN1A23A25 RN1A48A25 RN2A48D50 RN2A48A50 RN2A48A25 RN1A48D50 RN1A23D25 RN1A48D25
Text: Elektronische Lastrelais Solitron Relais, 1- und 2-polig Mit integriertem Kühlkörper • 1- und 2-poliges Elektronisches Lastrelais für AC-Lasten • Nullspannungsschalter zum Schalten von Heizungen und Motoren • Nennlaststrom 25 A, 50 A und 50 A mit hoher Stoßstrombelastbarkeit
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12a h3 fuse
Abstract: VEGA 450 equivalent of transistor 8050 VEGA 650 UL3101-1-UL Lambda vega 650 TX-201 UL3101-1 12v 2 ampere transformer Lambda 60A diode
Text: Vega 650 Handbook Part Number 17137 Input Parameters NOMINAL INPUT VOLTAGE RANGE 100 - 240VAC MAX. INPUT VOLTAGE RANGE 90-264VAC INPUT FREQUENCY 47-63Hz MAXIMUM INPUT CURRENT 11 A AC INRUSH CURRENT <40 AMPS Customer Air Cooling option C : The following method must be used for determining the safe operation of PSUs when C option
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240VAC
12a h3 fuse
VEGA 450
equivalent of transistor 8050
VEGA 650
UL3101-1-UL
Lambda vega 650
TX-201
UL3101-1
12v 2 ampere transformer
Lambda 60A diode
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philips ma 8440 p
Abstract: ADC 7815
Text: LDS8160 Dual-Output RGB / 6-Channel WLED Driver with LED-SenseTM Temperature & Color Compensation FEATURES • • • • • • • • • • • • • • TM Six PowerLite Linear LDO current drivers with 25 mV drop-out in a common cathode topology with up to 25 mA per channel
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LDS8160
philips ma 8440 p
ADC 7815
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DIODE N20
Abstract: ADC 7815 LDS8869
Text: LDS8160 Dual-Output RGB / 6-Channel WLED Driver with LED-SenseTM Temperature & Color Compensation FEATURES • • • • • • • • • • • • • • TM Six PowerLite Linear LDO current drivers with 25 mV drop-out in a common cathode topology with up to 25 mA per channel
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LDS8160
DIODE N20
ADC 7815
LDS8869
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D • bb53131 0 0 2 0 ^ 0 T ■ PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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bb53131
BUK627-500A
BUK627-500B
BUK627-500C
BUK627
si70Id
Q020fc
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tcd1500c
Abstract: No abstract text available
Text: TO SHIBA TCD1500C TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device T C D 1 500C The TCD1500C is a high sensitive and low dark current 5340-elements linear image sensor. The sensor can be used for facsimile, imagescanner and OCR. The signal pre
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TCD1500C
TCD1500C
5340-elements
400DPI)
600DPI)
WDIP22-C-400-2
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sp 571
Abstract: TCD1500C linear CCD-Sensor lfjr TCD1500
Text: TO SHIBA TCD1500C TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device T C D 1 500C The TCD1500C is a high sensitive and low dark current 5340-elements linear image sensor. The sensor can be used for facsimile, imagescanner and OCR. The signal pre
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TCD1500C
TCD1500C
5340-elements
400DPI)
600DPI)
WDIP22-C-400-2
mx5340)
sp 571
linear CCD-Sensor
lfjr
TCD1500
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500c t2
Abstract: BUK627-500A BUK627-500B BUK627-500C
Text: N AMER P H I L I P S / D I S C R E T E SSE D m ^53*131 GD2Gbba PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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bb53131
BUK627-500A
BUK627-500B
BUK627-500C
-r-37-
BUK627
-500A
-500B
-500C
500c t2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TCD1500C TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device T C D 1 500C The TCD1500C is a high sensitive and low dark current 5340-elements linear image sensor. The sensor can be used for facsimile, imagescanner and OCR. The signal pre processing circuit which is composed of Sample and Hold
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TCD1500C
TCD1500C
5340-elements
400DPI)
600DPI)
WDIP22-C-400-2
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TL500
Abstract: X363UW TL500CJ TL501 application BCD counter tl501 TL502C TL500C 7 segmen TL501C
Text: TL500I, TL500C, TL501I, T L50 1C, TL502C, TL503C A N A LO G TO-DIGITAL CO NVER TER BUILDING BLOCKS D 2 4 7 7 D ECEM BER 1 9 7 9 - R E V IS E D J A N U A R Y 1 9 8 9 T L 5 0 0 I, T L 500C , T L 5 0 1 I, T L501C ANALOG PROCESSORS True Differential Inputs Automatic Zero
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TL500I,
TL500C,
TL501I,
TL501C,
TL502C,
TL503C
D2477
1979-REVISED
TL500
X363UW
TL500CJ
TL501 application
BCD counter
tl501
TL502C
TL500C
7 segmen
TL501C
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN T rio d e fü r End stufen u. S e n d e z w e c k e RL2 T2 Technische D aten und S tre u w e rte 1. A llg e m e in e Daten Di e RL 2 T 2 ist als S e n d e r o h r bis z u ca. 4,5 in Wellenlänge verwendbar. H e i z u n g : Uj , = 1,9 V. Ih = 285 t 25 m A
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BUK627-500A
Abstract: BUK627-500B BUK627-500C
Text: N AMER PHILIPS/DISCRETE SSE D m b b 5 3 c131 GD2Gbba P o w erM O S tra n s isto r Fast R ecovery D iode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly
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bb53131
BUK627-500A
BUK627-500B
BUK627-500C
-r-37-
BUK627
-500A
-500B
-500C
-ID/100
BUK627-500A
BUK627-500B
BUK627-500C
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Untitled
Abstract: No abstract text available
Text: Preliminary specification Philips Semiconductors Three quadrant triacs BTA216X series C high GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended foruse in circuits where high static and
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BTA216X
BTA216X-
OT186A
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Untitled
Abstract: No abstract text available
Text: 24 Pin DIP Passive Delay Lines Zo OHMS ±10% 50 50 50 50 100 100 100 100 100 100 200 200 200 200 200 TOTAL DELAY NS ±5% or ±2 NS TAP TO TAP DELAYS NS 20 50 100 200 20 50 100 200 500 1000 20 50 100 500 1000 OUTPUT RISE TME NS MAX 1,± 0.2 2.5 ±0.5 5 ± 1.0
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EPA059-20A
EPA059-50A
EPA059-100A
EPA059-200A
EPA059-20B
EPA059-50B
EPA059-100B
EPA059-200B
EPA059-500B
EPA059-1000B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GEN ERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dl/dt can occur.
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BTA208
BTA208-
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Three quadrant triacs BTA21SB series C high GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in
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BTA21SB
BTA21SB-
BTA216B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high
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BTA212X
BTA212XRepetitive
OT186A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dl/dt can occur. These devices will commutate
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BTA212
BTA212Repetitive
T0220AB
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Untitled
Abstract: No abstract text available
Text: Audio D O -T 200 and D I-T 200 Plug-In Transform ers and In d u cto rs ♦ .035 % 1 1 FREQUENCY - HERTZ 200 400 600 1K 100 2OK AT 1 m W < a. 1.00±.25 - Prl. Imp. Q ma D.C4 in Prl. Sec. Imp. n D0-T255 M 2 7 /7 6 -0 7 1000C T 3 1 2 0 0 CT 3 DO-T275 M 2 7 /7 6 -0 6
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40K100K
D0-T255
1000C
DO-T275
DI-T200SH
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Three quadrant triacs BTA208S series C high commutation_ BTA208M series c GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope, suitable for surface mounting, intended for use
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BTA208S
BTA208M
BTA208S
OT428
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