5600K
Abstract: No abstract text available
Text: Bright View Electronics LED TUBE 1200mm / T9 / G13 LED TUBE • DESCRIPTION - Solution for energy saving,CO2 reduction and environment protection - BV LED tube is made of high brightness LED with driver build in - Long lifetime about to 50000Hrs - Recyclable
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Original
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1200mm
50000Hrs)
BVM-TG40NAD1
BVM-TG40NAC1
BVM-TG40NDC1
Date2009/08/14
5600K
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PDF
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220v led driver
Abstract: 220V LED circuit LM LED driver high voltage
Text: Bright View Electronics LED TUBE 1500mm / T9 / G13 LED TUBE • DESCRIPTION - Solution for energy saving,CO2 reduction and environment protection - BV LED tube is made of high brightness LED with driver build in - Long lifetime about to 50000Hrs - Recyclable
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Original
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1500mm
50000Hrs)
BVM-TG50NAD1
BVM-TG50NAC1
Date2009/08/14
220v led driver
220V LED circuit
LM LED driver high voltage
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PDF
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Untitled
Abstract: No abstract text available
Text: H-HP803-xx 3W Hexagon Power LED Series Features Highest Flux Very long operating life life >> 50000hr More Energy Efficient than Incandescent and most Halogen lamps Low voltage DC operated Instant light (less than 100 ns) Superior ESD protection Package Dimensions
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Original
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H-HP803-xx
50000hr
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PDF
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T-831
Abstract: T831
Text: PARAMETER UNITS Primary Impedance Secondary Impedance Longitudinal Balance 200 - 50000 Hz T-831 Ω Ω 600 50 60dB min. Primary DC Resistance 10 Ω Max. Secondary DC Resistance 4 Ω Max. Frequency Response 300 - 50000Hz +1.5 dB 1000 VRMS Insertion Loss
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Original
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T-831
50000Hz
25kHz
T-831
T831
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PDF
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OF LM 650
Abstract: AC Direct LED Lighting Driver LED tube
Text: Bright View Electronics LED TUBE 590mm / T9 / G13 LED TUBE • DESCRIPTION - Solution for energy saving,CO2 reduction and environment protection - BV LED tube is made of high brightness LED with driver build in - Long lifetime about to 50000Hrs - Recyclable
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Original
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590mm
50000Hrs)
BVM-TG21NAD1
Date2009/08/14
110Vac)
5600K
OF LM 650
AC Direct LED Lighting Driver
LED tube
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PDF
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D6PE2G140P3AW
Abstract: FAR-D5PE-881M50-P3EY F6QG2G140P2KA JISC60068-2-21 G6QH2G140N2LA D6HH1G960BH97 F6KB2G595B4HS D5NG782M0M15Z F6KA2G436A4VE D5PE942M5P3GT
Text: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.
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Original
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110sec.
10sec.
D6PE2G140P3AW
FAR-D5PE-881M50-P3EY
F6QG2G140P2KA
JISC60068-2-21
G6QH2G140N2LA
D6HH1G960BH97
F6KB2G595B4HS
D5NG782M0M15Z
F6KA2G436A4VE
D5PE942M5P3GT
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PDF
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A29L008
Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:
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Original
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A29L008
KbyteX15
SA10
SA11
SA12
SA13
SA14
SA15
SA16
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PDF
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a29040al-70
Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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Original
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A29040A
a29040al-70
A29040A-55
A29040A-70
A29040AL
A29040AL-55
A29040AV-55
IN3064
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PDF
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Original
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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PDF
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Original
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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PDF
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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Original
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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PDF
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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Original
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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PDF
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M29W008A
Abstract: M29W008AB M29W008AT
Text: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte
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Original
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M29W008AT
M29W008AB
TSOP40
M29W008A
M29W008AB
M29W008AT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CM44-10134-1E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and intended reader Thank you very much for your continued patronage of Fujitsu semiconductor products.
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Original
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CM44-10134-1E
2MC-16LX
16-BIT
MB90945
F2MC-16LX
F2MC-16LX
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PDF
|
|
|
NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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OCR Scan
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
|
PDF
|
s29f
Abstract: No abstract text available
Text: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '
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OCR Scan
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TMS29F040
4194304-BIT
29LF040/
29VF040
ComJS820A
R-PDSO-G32)
s29f
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040
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OCR Scan
|
SMJS820B
TMS29F040
29LF040/
29VF040
SMJS825)
A18A17
|
PDF
|
ba qu
Abstract: TC58F401
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION
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OCR Scan
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TC58F400F
TC58F401F
BITS/262
TC58F400/401
TC58F4
TC58F400)
00000h
01FFFh
02000h
ba qu
TC58F401
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PDF
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Untitled
Abstract: No abstract text available
Text: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for
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OCR Scan
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Am29LV081
20-year
Am29LV081B-100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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OCR Scan
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
|
PDF
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20510D
Abstract: No abstract text available
Text: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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OCR Scan
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Am29LV004
20510D
|
PDF
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Am29DL400BT
Abstract: No abstract text available
Text: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,
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OCR Scan
|
Am29DL400B
16-Bit)
44-Pin
16-038-S044-2
Am29DL400BT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Optim ized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and w rite operations for
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OCR Scan
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Am29LV081
|
PDF
|
am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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OCR Scan
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Am29F040B
Am29F040
|
PDF
|
