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    5000 RMS MOSFET Search Results

    5000 RMS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    5000 RMS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hp 3101

    Abstract: HP optocoupler 3101 a 3101 OPTOCOUPLER HCPL-3100 hp 3101 pin hp 3100 ic hp 3101 pin diagram E55361 HCPL3101 HCPL-3101
    Text: H Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features Description • High Output Current IO1 and IO2 0.4 A Peak, 0.1 A Continuous • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V • Wide Operating VCC Range


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    PDF HCPL-3100 HCPL-3101 HCPL-3100) HCPL-3101) HCPL-3100/3101 HCPL3100. hp 3101 HP optocoupler 3101 a 3101 OPTOCOUPLER HCPL-3100 hp 3101 pin hp 3100 ic hp 3101 pin diagram E55361 HCPL3101 HCPL-3101

    a 3101 OPTOCOUPLER

    Abstract: IC A 3101 HCPL-3100 HCPL3101 a 3101 HCPL-3101 V02H 2 anode igbt inverter circuit diagram E55361 5965-3583E
    Text: Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features Description • High Output Current IO1 and IO2 0.4 A Peak, 0.1 A Continuous • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V • Wide Operating VCC Range


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    PDF HCPL-3100 HCPL-3101 HCPL-3100) HCPL-3101) HCPL-3100/3101 voltage101 5091-5657E 5965-3583E a 3101 OPTOCOUPLER IC A 3101 HCPL-3100 HCPL3101 a 3101 HCPL-3101 V02H 2 anode igbt inverter circuit diagram E55361 5965-3583E

    HCPL-3100

    Abstract: a 3101 OPTOCOUPLER E55361 HCPL3101 HCPL-3101 V02H Q23-4
    Text: Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features Description • High Output Current IO1 and IO2 0.4 A Peak, 0.1 A Continuous • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V • Wide Operating VCC Range


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    PDF HCPL-3100 HCPL-3101 HCPL-3100) HCPL-3101) HCPL-3100/3101 5091-5657E 5965-3583E HCPL-3100 a 3101 OPTOCOUPLER E55361 HCPL3101 HCPL-3101 V02H Q23-4

    Untitled

    Abstract: No abstract text available
    Text: AME AME5288 6A Peak, 300KHz ~ 1.4MHz Synchronous Rectified Step-Down Converter n General Description n Applications l TV The AME5288 is a Synchronous Rectified Step-Down Converter with internal power MOSFETs. It achieves 6A peak continous output current over a wide switching frequency range with excellent load and line regulation.


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    PDF AME5288 300KHz AME5288 A005-DS5288-A

    TLP595B

    Abstract: E67349
    Text: TOSHIBA PHOTO RELAY TLP595B Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


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    PDF TLP595B TLP595B 200mA 2500Vrms UL1577, E67349 E67349

    "Photo Relay"

    Abstract: toshiba tape and reel TLP595G E67349
    Text: TOSHIBA PHOTO RELAY TLP595G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


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    PDF TLP595G TLP595G 150mA 2500Vrms UL1577, E67349 "Photo Relay" toshiba tape and reel E67349

    TLP596G

    Abstract: E67349 "Photo Relay" toshiba tape and reel
    Text: TOSHIBA PHOTO RELAY TLP596G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP596G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


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    PDF TLP596G TLP596G 120mA 2500Vrms UL1577, E67349 E67349 "Photo Relay" toshiba tape and reel

    TLP595A

    Abstract: E67349 PF 1014
    Text: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


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    PDF TLP595A TLP595A 300mA 2500Vrms UL1577, E67349 E67349 PF 1014

    TLP798GA

    Abstract: BC150 5000 rms mosfet BA100
    Text: TLP798GA 東芝フォトカプラ フォトリレー TLP798GA ○ 電子交換機 ○ 多機能電話機 ○ コードレスホン ○ 計測機器 単位: mm TLP798GA はフォト MOSFET と赤外発光ダイオードを光結合させた、 6 ピン DIP のフォトリレーです。


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    PDF TLP798GA 11-7A8 TLP798GA BC150 5000 rms mosfet BA100

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFN 340N06 HiPerFETTM Power MOSFETs Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


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    PDF 340N06

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFN 340N06 HiPerFETTM Power MOSFETs Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


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    PDF 340N06

    FOD3180

    Abstract: PWM IC 6-PIN DIP optocoupler 4-pin dip open collector TIL117-M equivalent hcpl3700 74OL6000M FODM121 FOD3181 H11F1M zener diode reference guide
    Text: Optocoupler Selection Guide Introduction Fairchild Semiconductor is a leader in the design and production of optocouplers, offering a broad range of package platforms, incorporating various combinations of input and output configurations. We offer simple function optocouplers for low-bandwidth/general switching applications, high performance optocouplers for high bandwidth/high-gain applications, highvoltage optocouplers for AC load switching applications, and other complex functions that provide unique performance


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    optocoupler 2705

    Abstract: AN-3006 CNY 817 AN-3004 FOD3180 fod3180 applications mct 3021 FOD073L POWER MOSFET DRIVE semiconductors cross reference
    Text: optocoupler selection guide Saving our world, 1mW at a time www.fairchildsemi.com introduction Fairchild semiconductor is a leader in the design and production of optocouplers. We offer a broad range of package platforms and incorporate various combinations of input and output configurations. our offerings include


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    Optocoupler with triac

    Abstract: Optocoupler with triac circuits 380 volt 50 hz triac high dv/dt thyristors optocoupler triac TRIAC 112 TRIAC inductive IL4208 OPTOCOUPLER Non-zero voltage detectors TRIAC FT 12
    Text: IL4208 800 V TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity, IFT=2 mA • Blocking Voltage, 800 V • Isolation Test Voltage 5300 VACRMS • 300 mA On-state Current • High Static dv/dt 10,000 V/Ms • Inverse Parallel SCRs Provide • Commutating dv/dt >2K V/µ s


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    PDF IL4208 E52744 Optocoupler with triac Optocoupler with triac circuits 380 volt 50 hz triac high dv/dt thyristors optocoupler triac TRIAC 112 TRIAC inductive IL4208 OPTOCOUPLER Non-zero voltage detectors TRIAC FT 12

    it300

    Abstract: optotriac IL4216 IL4217 IL4218 optotriac IL4218 OPTOtriac zero crossing
    Text: 600 V IL4216 700 V IL4217 800 V IL4218 Triac Optocoupler FEATURES • High Input Sensitivity IFT=1.3 mA • 600/700/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10,000 V/ µsec., typical • Inverse Parallel SCRs Provide Commutating


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    PDF IL4216 IL4217 IL4218 E52744 IL421x 17-August-01 it300 optotriac IL4216 IL4217 IL4218 optotriac IL4218 OPTOtriac zero crossing

    SCR opto DRIVER

    Abstract: IL4216 siemens relays snubber optotriac optotriac IL4218 siemens RC snubber OPTO TRIAC il4218 IL4217 IL4218 siemens triac
    Text: IL4216 700 V IL4217 800 V IL4218 600 V Triac Driver Optocoupler FEATURES • High Input Sensitivity IFT=1.3 mA • 600/700/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10,000 V/µsec., typical • Inverse Parallel SCRs Provide Commutating


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    PDF IL4216 IL4217 IL4218 E52744 IL421x 1-888-Infineon IL4216/4217/4218 SCR opto DRIVER IL4216 siemens relays snubber optotriac optotriac IL4218 siemens RC snubber OPTO TRIAC il4218 IL4217 IL4218 siemens triac

    triac optocoupler

    Abstract: Optocoupler with triac IL4208 IL420 VIO-500 triac f10
    Text: 600 V IL420 800 V IL4208 Triac Optocoupler FEATURES • High Input Sensitivity IFT=2.0 mA • 600/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10 kV/µs • Inverse Parallel SCRs Provide Commutating dv/dt >10 kV/µs • Very Low Leakage <10 µA


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    PDF IL420 IL4208 E52744 17-August-01 IF/IFT25 triac optocoupler Optocoupler with triac IL4208 IL420 VIO-500 triac f10

    Optocoupler with triac

    Abstract: zero voltage detector using SCRs optocoupler triac IL420 parallel triac TRIAC 112 TRIAC FT 12 it300 zero crossing detector using SCRs
    Text: IL420 600 V TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity IFT=2 mA • Blocking Voltage, 600 V • 300 mA On-State Current • High Static dv/dt 10,000 V/µs • Inverse Parallel SCRs Provide Commutating dv/dt >2K V/µs • Very Low Leakage <10 µA


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    PDF IL420 E52744 IF/IFT25 Optocoupler with triac zero voltage detector using SCRs optocoupler triac IL420 parallel triac TRIAC 112 TRIAC FT 12 it300 zero crossing detector using SCRs

    IL420

    Abstract: IL4208 optocoupler triac infineon IL420 siemens siemens triac
    Text: IL420 800 V IL4208 600 V Triac Driver Optocoupler FEATURES • High Input Sensitivity IFT=2.0 mA • 600/800 V Blocking Voltage • 300 mA On-State Current • High Static dv/dt 10 kV/µs • Inverse Parallel SCRs Provide Commutating dv/dt >10 kV/µs • Very Low Leakage <10 µA


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    PDF IL420 IL4208 E52744 -X001 IL420/4208 IF/IFT25 IL420 IL4208 optocoupler triac infineon IL420 siemens siemens triac

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA PHOTO RELAY TLP595B Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


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    PDF TLP595B 200mA 2500Vrms UL1577, E67349 TLP595B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA PHOTO RELAY TLP596G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP596G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


    OCR Scan
    PDF TLP596G 120mA 2500Vrms UL1577, E67349 TLP596G 100Hz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA PHOTO RELAY TLP595G Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


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    PDF TLP595G 150mA 2500Vrms UL1577, E67349 TLP595G

    optotriac

    Abstract: SCR opto DRIVER IL421
    Text: 600V IL4216 700 V IL4217 800V IL4218 Infineon Triac Optocoupler FEATURES High Input Sensitivity mA 600/700/800 V Blocking Voltage 300 mA On-State Current High Static dv/dt 10,000 V/|asec., typical Inverse Parallel SCRs Provide Commutating dv/dt >10 kV/ j.sec


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    PDF IL4216 IL4217 IL4218 E52744 IL421 1-888-lnfineon IL4216/4217/4218 optotriac SCR opto DRIVER

    51cn

    Abstract: BLRM
    Text: SIEMENS IL4208 800 VTriac Driver Optocoupter FEATURES High Input Sensitivity, mA Blocking Voltaga, BOOV isolation Test Voltage 5300 VACrms 300 mA On-state Current High Static dv/dt 10,000 V/M t Inverse Parallel SCRs Provide Commutating dv/dt>2KV4i* Vary Low Leakage <10 iA


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    PDF E52744 300mA 67VORM IL4208 51cn BLRM