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    500 W POWER AMPLIFIER Search Results

    500 W POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    500 W POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor Rev. 3 — 5 August 2013 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1.


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    BLL6H1214-500; BLL6H1214LS-500 BLL6H1214-500 1214LS-500 PDF

    high end amplifier schematics

    Abstract: MOS RM3 mos rm3 data 200 watt audio amplifier single power diode package AC97 TPA0103 TPA0103PWP TPA0103PWPLE amplifier stereo
    Text: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS167 – JULY 1997 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


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    TPA0103 500-mW SLOS167 24-Pin TPA0103 high end amplifier schematics MOS RM3 mos rm3 data 200 watt audio amplifier single power diode package AC97 TPA0103PWP TPA0103PWPLE amplifier stereo PDF

    AC97

    Abstract: TPA0103 TPA0103PWP TPA0103PWPLE
    Text: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS167 – JULY 1997 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


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    TPA0103 500-mW SLOS167 24-Pin TPA0103 AC97 TPA0103PWP TPA0103PWPLE PDF

    AC97

    Abstract: TPA0103 TPA0103PWP TPA0103PWPLE
    Text: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS167 – JULY 1997 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


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    TPA0103 500-mW SLOS167 24-Pin TPA0103 AC97 TPA0103PWP TPA0103PWPLE PDF

    power tr unit j122 5 pin

    Abstract: power tr unit j122 PTVA120251EA lm7805 3A A 4562 L 4440 J233 AG J56-1
    Text: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


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    PTVA120251EA PTVA120251EA H-36265-2 power tr unit j122 5 pin power tr unit j122 lm7805 3A A 4562 L 4440 J233 AG J56-1 PDF

    aif120

    Abstract: LPS-41 LDO06C SMT40C2
    Text: Embedded POWER AC-DC and DC-DC Power Conversion Solutions Contents AC–DC Power Supplies­ Low Power 3-500 W n Open frame/enclosed 1-4 outputs n External power adapters 9 17 Fanless/Conduction Cooled Up to 600 W n Enclosed 250 W Series n Enclosed 600 W Series


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    PDF

    MRF587

    Abstract: No abstract text available
    Text: MRF587 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. A 45° 1 2 B 3 4 FEATURES: C D • PG = 16 dB Typical at 220 W/500 MHz • Low Noise Figure


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    MRF587 MRF587 PDF

    Untitled

    Abstract: No abstract text available
    Text: 135 MHz BW IF Diversity Receiver AD6679 Data Sheet FEATURES APPLICATIONS Parallel LVDS DDR outputs In-band SFDR = 82 dBFS at 340 MHz (500 MSPS) In-band SNR = 67.8 dBFS at 340 MHz (500 MSPS) 1.1 W total power per channel at 500 MSPS (default settings) Noise density = −153 dBFS/Hz at 500 MSPS


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    AD6679 12-bCOMPLIANT MO-275-GGAB-1. 4-24-2015-A 196-Ball BP-196-3) AD6679BBPZ-500 AD6679BBPZRL7-500 AD6679-500EBZ PDF

    TRANSISTOR 726

    Abstract: 800B BLL6H1214-500 BV 726 B BV 726 C
    Text: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information


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    BLL6H1214-500 BLL6H1214-500 TRANSISTOR 726 800B BV 726 B BV 726 C PDF

    BLL6H1214-500

    Abstract: 800B
    Text: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 01 — 20 January 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information


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    BLL6H1214-500 BLL6H1214-500 800B PDF

    TRANSISTOR 1300

    Abstract: No abstract text available
    Text: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information


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    BLL6H1214-500 BLL6H1214-500 TRANSISTOR 1300 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 — 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.


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    BLA6H0912-500 BLA6H0912-500 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS16 7 -JU LY 1997 • Desktop Computer Amplifier Solution - 1.75-W Bridge Tied Load BTL Center Channel - 500-mW L/R Single-Ended Channels • Low Distortion Output


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    TPA0103 500-mW SLOS16 24-Pin PDF

    MRF485

    Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
    Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


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    Distorti1-11 MRF421 MRF475 O-22GAB MRF412 IMRF410 MRF485 MRF401 45A-09 MRF426 MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 PDF

    transistor c 2335

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF392 The RF Line NPN Silicon Push-Pull RF Power TVansistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 125 W, 30 to 500 MHz CONTROLLED "Q”


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    MRF392 MRF392 transistor c 2335 PDF

    MRF-393

    Abstract: MRF393 equivalent transistor rf "30 mhz" AN 240 Motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF393 The RF Line NPN Silicon Push-Pull RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 100 W, 30 to 500 MHz CONTROLLED ‘Q”


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    MRF393 MRF393 MRF-393 equivalent transistor rf "30 mhz" AN 240 Motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: Whpl H E W L E T T W!HM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC/PPA 519 Series Features Description • Frequency Range: 5 to 500 MHz The 519 Series is a wideband, UTO—TO-8T GR0UND high-power RF amplifier for lower


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    PP-38 44475A4 PDF

    Untitled

    Abstract: No abstract text available
    Text: W mWihttl M PH Ea Wc kLaE rTdT Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 561 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz • High Output Power: +27.0 dBm Typ • Temperature Compensated


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    D01G7b5 PDF

    Untitled

    Abstract: No abstract text available
    Text: W LETT mL'ho\ ltM HEW PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 504 Series Features • Frequency Range: 5 to 500 MHz • High Output Power: +21.0 dBm Typ • Temperature Compensated • 24-Volt Supply Applications


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    24-Volt drawing16 PDF

    sp605

    Abstract: No abstract text available
    Text: SP60S HARRIS PRELIMINARY Intelligent Power Half-Bridge 500 VDC Driver M arch 1991 P inout Features • 500 Volt Maximum Rating 1 4 PIN D IP T O P VIE W • Ability to Interface and Drive N-Channel Power Devices • Floating Bootstrap Power Supply for Upper Rail Drive


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    SP60S 100kHz 150ns 10OOpF sp605 PDF

    Untitled

    Abstract: No abstract text available
    Text: W hol HEW LETT mL'HM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC/PPA 509 Series Pin Configuration Features Description • Frequency Range: 5 to 500 MHz The 509 Series is a wideband single stage high power bipolar RF


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    PP-38 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 M H z frequency range. • 100 W, 30 to 500 MHz CONTROLLED “Q”


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    2N6986 PDF

    pf0045a

    Abstract: pf0045
    Text: PF0045A/PF0065A-MOS FET Power Amplifier Module for AMPS Handy Phone Features Pin Arrangement • High efficiency PF0045A: 58 % typ. at 1.2 W PF0065A: 52 % typ. at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 jiA typ.


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    PF0045A/PF0065A----------MOS PF0045A: PF0065A: PF0045A/PF0065A pf0045a pf0045 PDF

    Untitled

    Abstract: No abstract text available
    Text: PF0047A/PF0067A-MOS FET Power Amplifier Module for E-TACS Handy Phone Pin Arrangement Features • High Efficiency PF0047A: 58 % typ. at 1.2 W PF0067A: 52 % typ. at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 iA typ.


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    PF0047A/PF0067A-----------MOS PF0047A: PF0067A: PF0047A F0067A PDF