AM1011-500
Abstract: M198
Text: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION
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AM1011-500
AM1011-500
M198
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mos rm3 data
Abstract: No abstract text available
Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output
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TPA0103
SLOS167A
500-mW
24-Pin
mos rm3 data
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MSC81450M
Abstract: 81450M
Text: MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL S038
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MSC81450M
81450M
MSC81450M
81450M
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MRF247
Abstract: amplifier mrf247 865 RF transistor
Text: MRF247 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF247 is Designed for 12.5 V VHF large signal amplifier applications up to 175 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 7.0 dB at 75 W/175 MHz
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MRF247
MRF247
amplifier mrf247
865 RF transistor
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BLW77
Abstract: blw77 datasheet HF band power amplifier
Text: BLW77 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW77 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band. PACKAGE STYLE .500 4L FLG FEATURES: • PG = 12 dB min. at 15-30 W/1.6-28 MHz
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BLW77
BLW77
blw77 datasheet
HF band power amplifier
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ad5324brmz
Abstract: AD5327
Text: 2.5 V to 5.5 V, 500 A, Quad Voltage Output 8-/10-/12-Bit DACs in 10-Lead Packages AD5304/AD5314/AD5324 Data Sheet FEATURES GENERAL DESCRIPTION AD5304: 4 buffered 8-Bit DACs in 10-lead MSOP and 10-lead LFCSP A, W Version: ±1 LSB INL, B Version: ±0.625 LSB INL
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8-/10-/12-Bit
10-Lead
AD5304/AD5314/AD5324
AD5304/AD5314/AD53241
12-bit
AD5304/AD5314/AD5324
D00929-0-9/11
ad5324brmz
AD5327
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transistor MRF321
Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321/D
MRF321
transistor MRF321
JMC5201
redcap
erie redcap capacitors
vk200 coil
erie redcap
vk200
1N4001
MRF321
case 244-04
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TDK 2220
Abstract: 77C10 A113 A114 A115 AN1955 C101 JESD22 MRF5P21045NR1 mosfet j785
Text: Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21045NR1 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and
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MRF5P21045N
MRF5P21045NR1
TDK 2220
77C10
A113
A114
A115
AN1955
C101
JESD22
MRF5P21045NR1
mosfet j785
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Untitled
Abstract: No abstract text available
Text: 2MBI300NB-060-01 IGBT Module 600V / 300A 2 in one-package Features • VCE sat classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier
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2MBI300NB-060-01
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MRF321
Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
Text: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321/D
MRF321
MRF321/D*
MRF321
3 w RF POWER TRANSISTOR NPN
erie redcap capacitors
1N4001
VK200
transistor MRF321
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j687
Abstract: MRF323 VK200 case 244-04
Text: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323/D
MRF323
j687
MRF323
VK200
case 244-04
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Untitled
Abstract: No abstract text available
Text: LM4935, LM4935RLEVAL www.ti.com SNAS296E – OCTOBER 2005 – REVISED MAY 2013 LM4935 Boomer Audio Power Amplifier Series Audio Sub-System with Dual-Mode Stereo Headphone & Mono High Efficiency Loudspeaker Amplifiers and Multi-Purpose ADC Check for Samples: LM4935, LM4935RLEVAL
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LM4935,
LM4935RLEVAL
SNAS296E
LM4935
18-Bit
16-Bit
12-Bit
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Untitled
Abstract: No abstract text available
Text: LM4985, LM4985TMEVAL www.ti.com SNAS346C – MAY 2006 – REVISED APRIL 2013 LM4985 Boomer Audio Power Amplifier Series Stereo 135mW Low Noise Headphone Amplifier with Selectable Capacitively Coupled or Output Capacitor-less OCL Output and Digitally Controlled (I2C) Volume Control
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LM4985,
LM4985TMEVAL
SNAS346C
LM4985
135mW
68mWRMS
38mWRMS
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4682 TENTATIVE DATA STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: •Excellent hpj Linearity : hFE(l)=800~3200 (VCE=1V. IC=0.5A) : h FE(2)=500 (Typ.) (V CE= 1 V * TC= 3 A > ■L o w Collector Saturation Voltage
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2SC4682
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Untitled
Abstract: No abstract text available
Text: 7/93 W O DUEñR 1 2225-K Martin Avenue, Santa Clara, CA 95050 FAX C O M P O N E N T S á\ 408 492-1400 (408) 492-1500 5 to 500 MHz TO-8 Cascadable Amplifier ( Outline Drawings AC548 (Typical Values) High Third Order I.P. . + 35 dBm
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2225-K
AC548
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d1128
Abstract: layout diagram of microprocessor DAC8840FP DAC8840 DAC8840F DAC8840GBC DAC-8841 SOIC-24 c1490
Text: ANALOG DEVICES 8-Bit, Octal, 4-Quadrant Multiplying, CMOS TrimDAC DAC8840 FEATURES Replaces 8 Potentiometers 1 MHz 4-Quadrant Multiplying Bandwidth No Signal Inversion Low Zero Output Error Eight Individual Channels 3-W ire Serial Input 500 kHz Update Data Loading Rate
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DAC8840
DAC-8840
DAC-8840s
24-Pin
1111M
C1490â
d1128
layout diagram of microprocessor
DAC8840FP
DAC8840
DAC8840F
DAC8840GBC
DAC-8841
SOIC-24
c1490
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5bti
Abstract: No abstract text available
Text: TPS7133QPW P, TPS713 3Y M IC R O P O W ER LO W -D R O P O U T LD O V O L T A G E R E G U L A T O R S SLVS101A-FEBRUARY 1 9 9 5 - REVISED AUGUST 1995 Thermally Enhanced Surface-Mount Package (PWP) PWP PACKAGE (TOP VIEW) High-Current (500-mA) LDO Regulator
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TPS7133QPW
TPS713
SLVS101A-FEBRUARY
500-mA)
TPS7133QPWP
5bti
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of 470ohm resistor
Abstract: sim 900 application TQ9122
Text: T I I I I fi ! Ü ! I! S E M I C O N D U C TOR I N C L W I R E L E S S C O M M U N I C A T I O N S TQ9122 Low-Noise Amplifier Features 500 - 2500 MHz operation SO-8 plastic package The TQ9122 Low -N oise A m p lifie r is part of TriQ uint's RFIC Downconverter
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TQ9122
TQ9122
of 470ohm resistor
sim 900 application
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A741C
Abstract: ua741c 741m fairchild UA 741C ic 741c operational amplifier UA741CV
Text: UA741M, UA741C GENERAL-PURPOSE OPERATIONAL AMPLIFIERS D 9 2 0 , NOVEMBER 1 9 7 0 -R E V IS E D NOVEMBER 1 9 8 8 Short-Circuit Protection U A 7 4 1 M . . . J P ACKAGE TO P V IE W Offset-Voltage Null Capability N C (I 1 W Large Common-Mode and Differential
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UA741M,
UA741C
jtA741M,
A741C
uA741
741m
fairchild UA 741C
ic 741c operational amplifier
UA741CV
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304TL
Abstract: Eimac 304tl 304-TL 3000 watts audio amplifier 250 watt audio amplifier J060 5000 watts amplifier Scans-0017392 304T
Text: 304TL LOW-MU TRIODE - Mc C e i t e l SAN u l l o u g h BRUNO, , i nc MODULATOR CALIFORNIA O SCILLATO R AMPLIFIER The Eimac 304TL is a low-mu, power trio d e having a maximum p late dissipation rating o f 300 watts, and Is intended fo r use as an a m p lifie r, o scillato r or m odulator, where maximum performance can be obtained a t low
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304TL
304TL
40-Mc.
-1500VOLTS
Eimac 304tl
304-TL
3000 watts audio amplifier
250 watt audio amplifier
J060
5000 watts amplifier
Scans-0017392
304T
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Untitled
Abstract: No abstract text available
Text: LM 4562 LM4562 Dual High Performance, High Fidelity Audio Operational Amplifier T ex a s In s t r u m e n t s Literature Number: SNAS326I Ja n u ary 26, 2010 t i o n a l LM4562 Semiconductor Dual High Performance, High Fidelity Audio Operational Am plifier
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LM4562
SNAS326I
LM4562
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bf433
Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.
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MRF681
bf433
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
baw 92
HP11606A
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
110T
MRF5812
SF-11N
transistor 81 110 w 63
MRF68
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2674
Abstract: ks philips socket 939
Text: PE 04/10 PHILIPS PENTODE for use as H.P. amplifier PENTHODE pour utilisation comme amplificatrice H.F. PENTHODS zur Verwendung als H.F.Verstärker Cathode Cathode Kathode : oxide-coated : oxyde : Oxyd Keating : indirect Chauffage: indirect Heizung : indirekt
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PE04/10
2674
ks philips
socket 939
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instrumentation amplifier op 07
Abstract: op 07 op amp LM158 LM2904 OP-220 OP220AJ OP220AZ OP220CJ OP220CZ OP220EZ
Text: Dual Micropower Operational Amplifier OP-220 ANALOG ► DEVICES ORDERING INFORMATION f FEATURES • Excellent T C V qs M a t c h . 2 fiV /° C M a x Low Input O ffset Voltage .150/uV Max
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OP-220
150juV
100/xA
000V/mV
LM158,
LM2904
OP-220
OP-22
120dB
instrumentation amplifier op 07
op 07 op amp
LM158
LM2904
OP220AJ
OP220AZ
OP220CJ
OP220CZ
OP220EZ
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