POWER MOSFET Rise Time 1 ns
Abstract: IXZ4DF18N50 S 170 MOSFET DEIC-515 mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF IXZ318N50 deic 515
Text: IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET 500 Volts 19 A 0.29 Ohms Features • Isolated substrate − high isolation voltage >2500V − excellent thermal transfer
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IXZ4DF18N50
DEIC-515
IXZ318N50
IXZ4DF18N50
POWER MOSFET Rise Time 1 ns
S 170 MOSFET
mosfet IDM 200
DEIC515
rf mosfet power amplifier
10UF
deic 515
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pnp 500v
Abstract: No abstract text available
Text: High Voltage Transistors PNP High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line
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OT223
OT223
pnp 500v
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NPN VCEO 500V sot23
Abstract: ZTX857 FZT657 ZTX458
Text: High Voltage Transistors NPN High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance NPN specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line
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FZT857
ZTX857
FZT657
OT223
OT223
NPN VCEO 500V sot23
ZTX458
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AOL1454
Abstract: No abstract text available
Text: AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.
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AOL1454
AOL1454
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AOL1454
Abstract: diode 20a 40v
Text: AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.
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AOL1454
AOL1454
diode 20a 40v
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Untitled
Abstract: No abstract text available
Text: AON7702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7702 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product
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AON7702
AON7702
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AON7702
Abstract: AON7702L aon77
Text: AON7702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON7702/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON7702
AON7702/L
AON7702
AON7702L
aon77
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AO4480
Abstract: No abstract text available
Text: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.
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AO4480
AO4480
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AO4480L
Abstract: AO4480 24 volts smps
Text: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480/L uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.
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AO4480
AO4480/L
AO4480
AO4480L
-AO4480L
24 volts smps
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AO4480
Abstract: No abstract text available
Text: AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.
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AO4480
AO4480
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Untitled
Abstract: No abstract text available
Text: AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.
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AO4480
AO4480
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AON7702
Abstract: No abstract text available
Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON7702
AON7702
GON7702
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AON7702
Abstract: No abstract text available
Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON7702
AON7702
VoltageON7702
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sony 134a
Abstract: AO4474 AO4474L smps design
Text: AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4474 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product
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AO4474
AO4474
AO4474L
sony 134a
smps design
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678D
Abstract: SPRAGUE 678D 678D108M010DM3D 678D338M010EN3D
Text: Type 678D Vishay Sprague Aluminum Capacitors + 105°C, Miniature, Radial Lead FEATURES • Improved SMPS output capacitors • Highest ripple current ratings per case size • High CV ∆ ESR ≤ 1.3 x initial specified limit. ∆ DCL ≤ 2 x initial specified limit.
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22-Sep-00
678D
SPRAGUE 678D
678D108M010DM3D
678D338M010EN3D
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AON7400
Abstract: 30v 10a smps Sony 134A
Text: AON7400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7400 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product
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AON7400
AON7400
30v 10a smps
Sony 134A
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AON7406
Abstract: No abstract text available
Text: AON7406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7406 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product
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AON7406
AON7406
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Untitled
Abstract: No abstract text available
Text: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7700 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product
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AON7700
AON7700
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Sony 134A
Abstract: No abstract text available
Text: AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4474 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product
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AO4474
AO4474
Sony 134A
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AO4474L
Abstract: AO4474 RJA34
Text: AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4474/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
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AO4474
AO4474/L
AO4474
AO4474L
-AO4474L
RJA34
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AO4718L
Abstract: AO4718
Text: AO4718L 30V N-Channel MOSFET SRFET TM General Description Features SRFET TM The AO4718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AO4718L
AO4718L
O4718L
AO4718
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aon7700l
Abstract: AON7700 Mosfet AON7700
Text: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON7700
AON7700/L
aon7700l
AON7700
Mosfet AON7700
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500a mosfet
Abstract: AO4474
Text: AO4474 30V N-Channel MOSFET General Description Product Summary The AO4474 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS (V) = 30V
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AO4474
AO4474
500a mosfet
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672D
Abstract: sprague 672D 672D227F040EK5D 672D477F025DS5D 672D108H6R3EK5C 672d336h100dm5c 672d127h060ds5c 672D337H020DM5C
Text: Type 672D Vishay Sprague Aluminum Capacitors + 105°C, Miniature, Radial Lead FEATURES • Original SMPS output capacitors • Minimal ESR change • High ripple current capability PERFORMANCE CHARACTERISTICS Shelf Test: 500 hours @ + 105°C: ∆ CAP ≤ 10% from initial measurement.
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672D
sprague 672D
672D227F040EK5D
672D477F025DS5D
672D108H6R3EK5C
672d336h100dm5c
672d127h060ds5c
672D337H020DM5C
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