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    5.8 GHZ AMPLIFIER 10W Search Results

    5.8 GHZ AMPLIFIER 10W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    5.8 GHZ AMPLIFIER 10W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGA-495940-02

    Abstract: s band gan 10W 5.8 ghz amplifier 10w spectrum emission mask
    Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power


    Original     		PDF MGA-495940-02 64QAM) 16d/e MGA-495940-02 Start10 s band gan 10W 5.8 ghz amplifier 10w spectrum emission mask

    MGA-495940-02

    Abstract: Sk 4467
    Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power


    Original     		PDF MGA-495940-02 64QAM) 16d/e MGA-495940-02 Start10 Sk 4467

    Untitled

    Abstract: No abstract text available
    Text: Created on 02/05/08 6-18 GHz High Power Amplifier • • • • • • • • 10W typ. From 6 to 18 GHz 45 dB Gain 45 dBm IP3 7-14 dB NF 14-16V DC Supply 13A Max -10 to 50 C0 case Current/temp/voltage protection • 163 x 95 x 25 mm AMF-6B-06001800-120-40P


    Original     		PDF 4-16V AMF-6B-06001800-120-40P

    5.8GHz

    Abstract: 5.8 ghz amplifier 10w MGFC40V5258
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		PDF MGFC40V5258 MGFC40V5258 25deg 5.8GHz 5.8 ghz amplifier 10w

    5.8 ghz amplifier 10w

    Abstract: MGFC40V5258
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		PDF MGFC40V5258 MGFC40V5258 June/2004 5.8 ghz amplifier 10w

    5.8 ghz amplifier 10w

    Abstract: Gaas Power Amplifier 10W
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		PDF MGFC40V5258 MGFC40V5258 25deg June/2004 5.8 ghz amplifier 10w Gaas Power Amplifier 10W

    5.8 ghz amplifier 10w

    Abstract: No abstract text available
    Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power


    Original     		PDF MGA-495940-02 64QAM) 16d/e MGA-495940-02 5.8 ghz amplifier 10w

    Untitled

    Abstract: No abstract text available
    Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power


    Original     		PDF MGA-495940-02 64QAM) 16d/e MGA-495940-02

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V5258 MGFC40V5258

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V5258 MGFC40V5258

    AMF-6B-08001800-100-40P

    Abstract: miteq amf
    Text: Created on 02/05/08 8-18 GHz High Power Amplifier • • • • • • • • 10W typ. From 8 to 18 GHz 45 dB Gain 45 dBm IP3 6-10 dB NF 14-16V DC Supply 13A Max -10 to 50 C0 case Current/temp/voltage protection • 163 x 95 x 25 mm AMF-6B-08001800-100-40P


    Original     		PDF 4-16V AMF-6B-08001800-100-40P AMF-6B-08001800-100-40P miteq amf

    Untitled

    Abstract: No abstract text available
    Text: Created on 05/14/08 8-12 GHz High Power Amplifier • • • • • • • • 10W typ. From 8 to 12 GHz 45 dB Gain 45 dBm IP3 10 dB NF 14-16V DC Supply 13A Max -10 to 50 C0 case Current/temp/voltage protection • 163 x 95 x 25 mm AMF-6B-08001200-110-40P


    Original     		PDF 4-16V AMF-6B-08001200-110-40P

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK A Selection of Hittite Components for Broadband Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation


    Original     		PDF HMC920LP5E HMC980 HMC981 HMC980LP4E

    EIC5964-10

    Abstract: No abstract text available
    Text: EIC5964-10 5.90-6.40 GHz 10-Watt Internally-Matched Power FET FEATURES • • • • • • • • 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency


    Original     		PDF EIC5964-10 10-Watt EIC5964-10

    Untitled

    Abstract: No abstract text available
    Text: TQP369185 DC-6 GHz Gain Block Applications • • • • • Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless SOT-89 Package Product Features • • • • • • • • • Functional Block Diagram DC-6000 MHz Robust Class 2 >2000V HBM ESD Rating


    Original     		PDF TQP369185 OT-89 DC-6000 TQP369185

    Untitled

    Abstract: No abstract text available
    Text: TQP369185 DC-6 GHz Gain Block Applications •     Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features          SOT-89 Package Functional Block Diagram GND Cascadable Gain Block


    Original     		PDF TQP369185 OT-89 TQP369185

    s-parameter s11 s12 s21

    Abstract: No abstract text available
    Text: TQP369185 DC-6 GHz Gain Block Applications •     Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features          SOT-89 Package Functional Block Diagram GND Cascadable Gain Block


    Original     		PDF TQP369185 OT-89 TQP369185 s-parameter s11 s12 s21

    Untitled

    Abstract: No abstract text available
    Text: TQP369185 DC-6 GHz Gain Block Applications •     Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features          SOT-89 Package Functional Block Diagram GND Cascadable Gain Block


    Original     		PDF TQP369185 OT-89 TQP369185

    HMC717LP3E

    Abstract: HMC476SC70E hmc688LP4E rf transceiver 5.9 ghz uwb transceiver WiMAX RF Transceiver HMC639ST89E HMC394LP4E hmc215lp4e HMC408
    Text: A Selection of Hittite Components for BROADBAND, DC - 11 GHz – CATV, DBS, VoIP, WiMAX, WiBro & WLAN Function Low Noise Amplifier Driver Amplifier & Gain Block Linear & Power Amplifier Attenuator: Analog Attenuator: Digital Mixer 0.005 - 2.15 GHz CATV & DBS


    Original     		PDF HMC548LP3E HMC549MS8GE HMC599ST89E HMC311SC70E HMC454ST89E HMC474SC70E HMC475ST89E HMC476SC70E HMC589ST89E HMC453QS16GE HMC717LP3E HMC476SC70E hmc688LP4E rf transceiver 5.9 ghz uwb transceiver WiMAX RF Transceiver HMC639ST89E HMC394LP4E hmc215lp4e HMC408

    Untitled

    Abstract: No abstract text available
    Text: EIC5964-10 5.90-6.40 GHz 10-Watt Internally-Matched Power FET Issued Date: 06-22-04 FEATURES • • • • • • • • 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression


    Original     		PDF EIC5964-10 10-Watt EIC5964-10 CO408-737-1868

    Untitled

    Abstract: No abstract text available
    Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6000528-Q3 T2G6000528-Q3 TQGaN25

    ATF-54143-BLKG

    Abstract: ATF54143 a 1458 atf-54143-tr1g diagram transistor tt 2140 ATF-54143BLKG L6 sot 665 l0746
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


    Original     		PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT343 SC-70) 5989-3751EN AV01-0620EN ATF-54143-BLKG a 1458 atf-54143-tr1g diagram transistor tt 2140 ATF-54143BLKG L6 sot 665 l0746

    ATF-54143-TR1G

    Abstract: l0746 A004R ATF-54143 C0159 ATF-54143 application notes transistor c4 5.8 ghz amplifier 10w
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


    Original     		PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT-343 OT343 SC-70) AV01-0620EN AV02-0488EN ATF-54143-TR1G l0746 A004R C0159 ATF-54143 application notes transistor c4 5.8 ghz amplifier 10w

    marking r4 SOT343

    Abstract: a 1458 ATF54143 L6 sot 665 l0746
    Text: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.


    Original     		PDF ATF-54143 ATF54143 SC-70 OT343) ATF-54143 OT343 SC-70) AV01-0620EN AV02-0488EN marking r4 SOT343 a 1458 L6 sot 665 l0746