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    5.0J 250 Search Results

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    5.0J 250 Price and Stock

    Nextgen Components RF01N150J250LE

    Cap. SMD,0201,NP0,15pF,5%,25V
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    DigiKey RF01N150J250LE Reel 6,000,000 15,000
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    Walsin Technology Corporation 0402N150J250CT

    CAP CER 15PF 25V C0G/NP0 0402
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    DigiKey 0402N150J250CT Reel 40,000 10,000
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    0402N150J250CT Cut Tape 6,671 1
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    Walsin Technology Corporation 0201N150J250CT

    CAP CER 15PF 25V C0G/NP0 0201
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    DigiKey 0201N150J250CT Cut Tape 15,947 1
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    0201N150J250CT Reel 15,000 15,000
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    Bristol Electronics 0201N150J250CT 30,000
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    TME 0201N150J250CT 15,000
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    Ohmite Mfg Co L50J250KE

    RES CHAS MNT 250K OHM 5% 50W
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    DigiKey L50J250KE Bulk 317 1
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    L50J250KE Bulk 35 1
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    Newark L50J250KE Bulk 35 1
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    RS L50J250KE Bulk 40 10 Weeks 1
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    Master Electronics L50J250KE 452
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    Ohmite Mfg Co L50J250K

    RES CHAS MNT 250K OHM 5% 50W
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    DigiKey L50J250K Bulk 28 1
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    Newark L50J250K Bulk 13
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    Master Electronics L50J250K
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    5.0J 250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UM10204 I2C バス仕様およびユーザーマニ ュ アル Rev. 5.0J — 2012 年 10 月 9 日 (日本語翻訳 11 月 2 日) ユーザーマニ ュ アル こ の日本語訳資料は 参考資料と し てご提供し てお り ます。 英語版の


    Original
    PDF UM10204

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M8L140; BLF2425M8LS140 Power LDMOS transistor Rev. 1 — 27 August 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


    Original
    PDF BLF2425M8L140; BLF2425M8LS140 BLF2425M8L140 BLF2425M8LS140 2425M8LS140

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


    Original
    PDF BLF2425M7L140; BLF2425M7LS140 BLF2425M7L140 BLF2425M7LS140

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


    Original
    PDF BLF2425M7L140; BLF2425M7LS140 BLF2425M7L140 BLF2425M7LS140

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 2 — 20 April 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


    Original
    PDF BLF2425M7L140; BLF2425M7LS140 BLF2425M7L140 BLF2425M7LS140

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


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    PDF CLF1G0035S-50 CLF1G0035S-50

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


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    PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50

    100B102KW

    Abstract: AN11130 66-0304-00004-000 600F0R 96798
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


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    PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 100B102KW AN11130 66-0304-00004-000 600F0R 96798

    bc857b nxp

    Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


    Original
    PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 bc857b nxp C5750X7S2A106M Gan transistor C 1972 transistor

    Bolt Torque M32

    Abstract: hydraulic shock absorber RBC2015 RBC0805 RB27-X331 RBC1411 shock absorber RBC1007 Energy Me bm10
    Text: Shock Absorber Series RB Impact and noise absorption Automatic adjustment to the most appropriate absorption performance Dampening to meet the high speed requirements of the modern world. Specially designed orifice can absorb energy comprehensively and most appropriately in many different


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    PDF

    circuit diagram of pill camera

    Abstract: 1kV varistor
    Text: Transient Suppression www.avx.com AVX Transient Suppression Products Version 14.1 Transient Suppression Products The contents of this catalog are entitled and located on the pages noted below: TransGuard Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1


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    PDF S-TTVS0M114-C circuit diagram of pill camera 1kV varistor

    CL10J

    Abstract: PS219A4-ASTX KIA6419 KIA6451P
    Text: K E G SEMICONDUCTOR TECHNICAL DATA KIA6419P/F s il ic o n m o n o l it h ic in t e g r a t e d c ir c u it LOW POWER AUDIO AMPLIFIER The KIA6419P/F is a low power audio amplifier integrated circuit intended primarily for telephone applications, such as in speakerphones. It provides


    OCR Scan
    PDF KIA6419P/F KIA6419P/F KIA6419 FIGURE24-AUDI0 FIGURE25-FREQUENCY FIGURE24 FIGURE26-SPLIT 20kfi CL10J PS219A4-ASTX KIA6451P

    KIA6419

    Abstract: KIA6451P amplifier 32 ohm 200mW low thd
    Text: K E G SEMICONDUCTOR TECHNICAL DATA KIA6419P/F s il ic o n m o n o l it h ic in t e g r a t e d c ir c u it LOW POWER AUDIO AMPLIFIER The KIA6419P/F is a low power audio amplifier integrated circuit intended primarily for telephone applications, such as in speakerphones. It provides


    OCR Scan
    PDF KIA6419P/F KIA6419P/F KIA6419 FIGURE24-AUDI0 FIGURE25-FREQUENCY FIGURE24 FIGURE26-SPLIT 75kfi KIA6451P amplifier 32 ohm 200mW low thd

    vouchers

    Abstract: No abstract text available
    Text: ß May 1996 QR1001 QuickRing Enhanced Data Stream Controller General Description Features QuickRing technology is a point-to-point data transfer archi­ tecture designed to facilitate high speed data streams be­ tween devices, boards and systems. The QuickRing archi­


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    PDF QR1001 81-043-299-240B vouchers