TRANSISTOR MARKING YB
Abstract: BFP420F BFP540F s parameters 4ghz
Text: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line to p v ie w " ! A T s d ir e c tio n o f u n r e e lin g
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BFP540F
TRANSISTOR MARKING YB
BFP420F
BFP540F
s parameters 4ghz
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marking AUs
Abstract: No abstract text available
Text: BFP540ESD NPN Silicon RF Transistor 3 Preliminary data 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21.0 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line • Exellent ESD performance
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BFP540ESD
VPS05605
OT343
marking AUs
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TRANSISTOR MARKING FA
Abstract: EHA07307 CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
TRANSISTOR MARKING FA
EHA07307
CJE marking diode
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RF NPN POWER TRANSISTOR C 10-12 GHZ
Abstract: BFP540ESD BGA420
Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line
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BFP540ESD
OT343
RF NPN POWER TRANSISTOR C 10-12 GHZ
BFP540ESD
BGA420
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BFP540F
Abstract: No abstract text available
Text: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s
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BFP540F
Sep-05-2003
BFP540F
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BFP540
Abstract: INFINEON ATS BGA420 Transistor BFP540
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
OT343
BFP540
INFINEON ATS
BGA420
Transistor BFP540
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16f873
Abstract: MSM9520RS 3SK73 16f873 datasheet Diode 1S1588 FT-101Z 2SC1674L PB-2086A Clock control PIC PIC16F873 2sc1815 replacement
Text: FT-101Z/ FT-107/ FT-707/ FT-901,902 later version DISPLAY COUNTER UNIT (PB-2086A) Custom Integrated Circuit (MSM9520RS) Replacement Module Assembly and Installation Manual (v1.3e) MSM9520RS Replacement Module Manual v1.3e STEP-BY-STEP PROCEDURES This manual describes how to assemble, install and make adjustments of the MSM9520RS
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FT-101Z/
FT-107/
FT-707/
FT-901
PB-2086A)
MSM9520RS)
MSM9520RS
MSM9520RS
FT-101Z
FT-107,
16f873
3SK73
16f873 datasheet
Diode 1S1588
2SC1674L
PB-2086A
Clock control PIC PIC16F873
2sc1815 replacement
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hv9967
Abstract: HV9910B dc to dc converter 12v design DN2450 HV9910B HV9910B* application Depletion-Mode MOSFET HV9910B "application note" depletion MOSFET pwm rgb led driver HV9910
Text: Supertex inc. HV9967 Integrated LED Driver with Average-Mode Current Control Features ► ► ► ► ► ► ► ► ► ► 3% accurate LED current Integrated 60V 0.8Ω MOSFET Small outline MSOP-8 package Low sensitivity to external component variation Cascode connection with a 500V depletion-mode
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HV9967
HV9967
DSFP-HV9967
A122110
HV9910B dc to dc converter 12v design
DN2450
HV9910B
HV9910B* application
Depletion-Mode MOSFET
HV9910B "application note"
depletion MOSFET
pwm rgb led driver
HV9910
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BFP405 ALs
Abstract: No abstract text available
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405
VPS05605
OT343
BFP405 ALs
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BFP420 application notes
Abstract: Transistor BFP420 BFP420
Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420
VPS05605
OT343
BFP420 application notes
Transistor BFP420
BFP420
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HM200
Abstract: HM879 marking 3A sot-89 Germanium Transistor
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Features SOT-89 • Charger-up time is about 1 mS faster than of a germanium transistor.
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HM200203
HM879
OT-89
HM200
HM879
marking 3A sot-89
Germanium Transistor
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5v to 30 v dc dc converter circuit diagram
Abstract: 12V DC to 40V dC converter circuit diagram 12v to 36 v dc dc converter circuit diagram 27BSC TS3063 TS3063CB TS3063CS 180KHz 3V-40V
Text: TS3063 800mA/180kHz Dc to Dc Converter Controller SOP-8 MSOP-8 Pin Definition: 1. SC 5. Comp 2. SE 6. Vcc 3. CT 7. Ipk 4. Gnd 8. Vdriver General Description The TS3063 is a monolithic switching regulator and subsystem intended for use as DC to DC converter. It contains an
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TS3063
800mA/180kHz
TS3063
5v to 30 v dc dc converter circuit diagram
12V DC to 40V dC converter circuit diagram
12v to 36 v dc dc converter circuit diagram
27BSC
TS3063CB
TS3063CS
180KHz
3V-40V
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Untitled
Abstract: No abstract text available
Text: TS3063 800mA/180kHz Dc to Dc Converter Controller SOP-8 MSOP-8 Pin Definition: 1. SC 5. Comp 2. SE 6. Vcc 3. CT 7. Ipk 4. Gnd 8. Vdriver General Description The TS3063 is a monolithic switching regulator and subsystem intended for use as DC to DC converter. It contains an
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TS3063
800mA/180kHz
TS3063
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1E5 MARKING
Abstract: XB-7 MARKING ls xa2 sot23 sms3922-005lf SMS3924-075LF
Text: DATA SHEET Surface Mount General-Purpose Schottky Diodes Features Tight parameter distribution Available as singles and pairs ● 100% DC tested ● Designed for high-volume commercial applications ● Available in tape and reel packaging ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1)
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J-STD-020
SC-70,
SC-79,
OD-323,
OT-23,
1E5 MARKING
XB-7
MARKING ls
xa2 sot23
sms3922-005lf
SMS3924-075LF
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marking ps
Abstract: SMP1340-075LF MARKING RS2
Text: DATA SHEET SMP1340 Series: Fast Switching Speed, Low Capacitance, Plastic Packaged PIN Diodes Features Designed for fast-speed wireless switch applications 1.0 Ω resistance, 0.3 pF capacitance ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1)
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SMP1340
J-STD-020
marking ps
SMP1340-075LF
MARKING RS2
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Transistor Equivalent list
Abstract: FMBT3904W 1N916 8 open colector output oc 140 npn transistor
Text: Formosa MS NPN Epitaxial Planar Transistor FMBT3904W List List. 1 Package outline. 2
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FMBT3904W
MIL-STD-750D
METHOD-1051
125OC
1000hrs.
METHOD-1038
175OC
METHOD-1031
Transistor Equivalent list
FMBT3904W
1N916
8 open colector output
oc 140 npn transistor
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marking RJ3 SOT23
Abstract: SMP1307-005LF top marking pjm 712 DIODE marking sot23 SMP1307-001LF SMP1307-011LF marking rj3 SOT-23 marking .633 marking smp1307-027lf
Text: DATA SHEET SMP1307 Series: Very Low Distortion Attenuator Plastic Packaged PIN Diodes Features Low-distortion design Frequency range from HF to > 2 GHz ● Designed for CATV AGC applications ● Designed for high-volume wireless applications ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1)
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SMP1307
J-STD-020
marking RJ3 SOT23
SMP1307-005LF
top marking pjm
712 DIODE marking sot23
SMP1307-001LF
SMP1307-011LF
marking rj3
SOT-23 marking .633
marking
smp1307-027lf
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dual 1038 Transistor
Abstract: No abstract text available
Text: Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 List List. 1 Package outline. 2
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FMBT3906DW1
MIL-STD-750D
METHOD-1051
125OC
1000hrs.
METHOD-1038
175OC
METHOD-1031
dual 1038 Transistor
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Untitled
Abstract: No abstract text available
Text: MICRON T E C H N O L O G Y INC • bi ll 5 ^ 0 0 0 5 1 5 1 SbT « M R N MT12D88C140 1 MEG x 40, 2 MEG x 20 IC DRAM CARD MICRON B S5E D ltCHNOl.OCiV INC IC DRAM CARD 4 MEGABYTES 1 MEG x 40, 2 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) PIN« MARKING
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MT12D88C140
88-Pin
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Untitled
Abstract: No abstract text available
Text: |V y |C R O I\l MT16D88C51232 5 1 2 K x 32, 1 M E G x 16 IC D R A M C A R D IC DRAM CARD 2 MEGABYTES 512K x 32, 1 MEG x 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 GENERAL DESCRIPTION The M T16D88C51232 is a 2 m egabyte, IC DRAM card
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MT16D88C51232
88-pin
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Untitled
Abstract: No abstract text available
Text: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages
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28-Pin
28-PiD
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Untitled
Abstract: No abstract text available
Text: SM T NETW ORKS P R E C I S I O N T H I N F I L M E C H N O L O G Y Molded, 50 Mil Pitch, Dual-In-Line R esistor N etw orks T h in F ilm N O M C S e rie s Narrow Body F eatures Standard 8, 14 & 16 pin counts (0.150” Narrow body) JEDEC MS012 Rugged molded case construction
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MS012
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MOTOROLA DATE CODE transistor
Abstract: MSC2295–BT1
Text: MOTOROLA SC XSTRS/R F 4bE J> • b3b?2S4 00^3721 2 H f l O T ±T ~ 3H £ Order this data sheet by MSC2295-BT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSC2295-BT1 MSC2295-CT1 NPN Silicon RF Amplifier Transistor M o to r o la p r e f e r r e d d e v ic e s
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MSC2295-BT1/D
MSC2295-BT1
MSC2295-CT1
SC-59
MOTOROLA DATE CODE transistor
MSC2295–BT1
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Untitled
Abstract: No abstract text available
Text: S M T N ETW O R K S P R E C I S I O N T H I N F I L M T E H M o ld ed , 5 0 M il P itc h , D u al-ln -L in e R e s is to r N e tw o rk s N O L O G V T h in F ilm W O M C S e rie s W id e B ody F eatures • Standard 16 and 20 Pin Counts (.300 Wide Body) JEDEC MS-013
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MS-013
30-ISRAEL
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