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    5 PIN IC MARKING MS Search Results

    5 PIN IC MARKING MS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    5 PIN IC MARKING MS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR MARKING YB

    Abstract: BFP420F BFP540F s parameters 4ghz
    Text: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line to p v ie w " ! A T s  d ir e c tio n o f u n r e e lin g


    Original     		PDF BFP540F TRANSISTOR MARKING YB BFP420F BFP540F s parameters 4ghz

    marking AUs

    Abstract: No abstract text available
    Text: BFP540ESD NPN Silicon RF Transistor 3 Preliminary data 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21.0 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line • Exellent ESD performance


    Original     		PDF BFP540ESD VPS05605 OT343 marking AUs

    TRANSISTOR MARKING FA

    Abstract: EHA07307 CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F TRANSISTOR MARKING FA EHA07307 CJE marking diode

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFP540ESD BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		PDF BFP540ESD OT343 RF NPN POWER TRANSISTOR C 10-12 GHZ BFP540ESD BGA420

    BFP540F

    Abstract: No abstract text available
    Text: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s 


    Original     		PDF BFP540F Sep-05-2003 BFP540F

    BFP540

    Abstract: INFINEON ATS BGA420 Transistor BFP540
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 OT343 BFP540 INFINEON ATS BGA420 Transistor BFP540

    16f873

    Abstract: MSM9520RS 3SK73 16f873 datasheet Diode 1S1588 FT-101Z 2SC1674L PB-2086A Clock control PIC PIC16F873 2sc1815 replacement
    Text: FT-101Z/ FT-107/ FT-707/ FT-901,902 later version DISPLAY COUNTER UNIT (PB-2086A) Custom Integrated Circuit (MSM9520RS) Replacement Module Assembly and Installation Manual (v1.3e) MSM9520RS Replacement Module Manual v1.3e STEP-BY-STEP PROCEDURES This manual describes how to assemble, install and make adjustments of the MSM9520RS


    Original     		PDF FT-101Z/ FT-107/ FT-707/ FT-901 PB-2086A) MSM9520RS) MSM9520RS MSM9520RS FT-101Z FT-107, 16f873 3SK73 16f873 datasheet Diode 1S1588 2SC1674L PB-2086A Clock control PIC PIC16F873 2sc1815 replacement

    hv9967

    Abstract: HV9910B dc to dc converter 12v design DN2450 HV9910B HV9910B* application Depletion-Mode MOSFET HV9910B "application note" depletion MOSFET pwm rgb led driver HV9910
    Text: Supertex inc. HV9967 Integrated LED Driver with Average-Mode Current Control Features ► ► ► ► ► ► ► ► ► ► 3% accurate LED current Integrated 60V 0.8Ω MOSFET Small outline MSOP-8 package Low sensitivity to external component variation Cascode connection with a 500V depletion-mode


    Original     		PDF HV9967 HV9967 DSFP-HV9967 A122110 HV9910B dc to dc converter 12v design DN2450 HV9910B HV9910B* application Depletion-Mode MOSFET HV9910B "application note" depletion MOSFET pwm rgb led driver HV9910

    BFP405 ALs

    Abstract: No abstract text available
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405 VPS05605 OT343 BFP405 ALs

    BFP420 application notes

    Abstract: Transistor BFP420 BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420 VPS05605 OT343 BFP420 application notes Transistor BFP420 BFP420

    HM200

    Abstract: HM879 marking 3A sot-89 Germanium Transistor
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Features SOT-89 • Charger-up time is about 1 mS faster than of a germanium transistor.


    Original     		PDF HM200203 HM879 OT-89 HM200 HM879 marking 3A sot-89 Germanium Transistor

    5v to 30 v dc dc converter circuit diagram

    Abstract: 12V DC to 40V dC converter circuit diagram 12v to 36 v dc dc converter circuit diagram 27BSC TS3063 TS3063CB TS3063CS 180KHz 3V-40V
    Text: TS3063 800mA/180kHz Dc to Dc Converter Controller SOP-8 MSOP-8 Pin Definition: 1. SC 5. Comp 2. SE 6. Vcc 3. CT 7. Ipk 4. Gnd 8. Vdriver General Description The TS3063 is a monolithic switching regulator and subsystem intended for use as DC to DC converter. It contains an


    Original     		PDF TS3063 800mA/180kHz TS3063 5v to 30 v dc dc converter circuit diagram 12V DC to 40V dC converter circuit diagram 12v to 36 v dc dc converter circuit diagram 27BSC TS3063CB TS3063CS 180KHz 3V-40V

    Untitled

    Abstract: No abstract text available
    Text: TS3063 800mA/180kHz Dc to Dc Converter Controller SOP-8 MSOP-8 Pin Definition: 1. SC 5. Comp 2. SE 6. Vcc 3. CT 7. Ipk 4. Gnd 8. Vdriver General Description The TS3063 is a monolithic switching regulator and subsystem intended for use as DC to DC converter. It contains an


    Original     		PDF TS3063 800mA/180kHz TS3063

    1E5 MARKING

    Abstract: XB-7 MARKING ls xa2 sot23 sms3922-005lf SMS3924-075LF
    Text: DATA SHEET Surface Mount General-Purpose Schottky Diodes Features Tight parameter distribution Available as singles and pairs ● 100% DC tested ● Designed for high-volume commercial applications ● Available in tape and reel packaging ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1)


    Original     		PDF J-STD-020 SC-70, SC-79, OD-323, OT-23, 1E5 MARKING XB-7 MARKING ls xa2 sot23 sms3922-005lf SMS3924-075LF

    marking ps

    Abstract: SMP1340-075LF MARKING RS2
    Text: DATA SHEET SMP1340 Series: Fast Switching Speed, Low Capacitance, Plastic Packaged PIN Diodes Features Designed for fast-speed wireless switch applications 1.0 Ω resistance, 0.3 pF capacitance ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1)


    Original     		PDF SMP1340 J-STD-020 marking ps SMP1340-075LF MARKING RS2

    Transistor Equivalent list

    Abstract: FMBT3904W 1N916 8 open colector output oc 140 npn transistor
    Text: Formosa MS NPN Epitaxial Planar Transistor FMBT3904W List List. 1 Package outline. 2


    Original     		PDF FMBT3904W MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 Transistor Equivalent list FMBT3904W 1N916 8 open colector output oc 140 npn transistor

    marking RJ3 SOT23

    Abstract: SMP1307-005LF top marking pjm 712 DIODE marking sot23 SMP1307-001LF SMP1307-011LF marking rj3 SOT-23 marking .633 marking smp1307-027lf
    Text: DATA SHEET SMP1307 Series: Very Low Distortion Attenuator Plastic Packaged PIN Diodes Features Low-distortion design Frequency range from HF to > 2 GHz ● Designed for CATV AGC applications ● Designed for high-volume wireless applications ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1)


    Original     		PDF SMP1307 J-STD-020 marking RJ3 SOT23 SMP1307-005LF top marking pjm 712 DIODE marking sot23 SMP1307-001LF SMP1307-011LF marking rj3 SOT-23 marking .633 marking smp1307-027lf

    dual 1038 Transistor

    Abstract: No abstract text available
    Text: Formosa MS Dual PNP Epitaxial Planar Transistor FMBT3906DW1 List List. 1 Package outline. 2


    Original     		PDF FMBT3906DW1 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 dual 1038 Transistor

    Untitled

    Abstract: No abstract text available
    Text: MICRON T E C H N O L O G Y INC • bi ll 5 ^ 0 0 0 5 1 5 1 SbT « M R N MT12D88C140 1 MEG x 40, 2 MEG x 20 IC DRAM CARD MICRON B S5E D ltCHNOl.OCiV INC IC DRAM CARD 4 MEGABYTES 1 MEG x 40, 2 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) PIN« MARKING


    OCR Scan     		PDF MT12D88C140 88-Pin

    Untitled

    Abstract: No abstract text available
    Text: |V y |C R O I\l MT16D88C51232 5 1 2 K x 32, 1 M E G x 16 IC D R A M C A R D IC DRAM CARD 2 MEGABYTES 512K x 32, 1 MEG x 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 GENERAL DESCRIPTION The M T16D88C51232 is a 2 m egabyte, IC DRAM card


    OCR Scan     		PDF MT16D88C51232 88-pin

    Untitled

    Abstract: No abstract text available
    Text: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages


    OCR Scan     		PDF 28-Pin 28-PiD

    Untitled

    Abstract: No abstract text available
    Text: SM T NETW ORKS P R E C I S I O N T H I N F I L M E C H N O L O G Y Molded, 50 Mil Pitch, Dual-In-Line R esistor N etw orks T h in F ilm N O M C S e rie s Narrow Body F eatures Standard 8, 14 & 16 pin counts (0.150” Narrow body) JEDEC MS012 Rugged molded case construction


    OCR Scan     		PDF MS012

    MOTOROLA DATE CODE transistor

    Abstract: MSC2295–BT1
    Text: MOTOROLA SC XSTRS/R F 4bE J> • b3b?2S4 00^3721 2 H f l O T ±T ~ 3H £ Order this data sheet by MSC2295-BT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSC2295-BT1 MSC2295-CT1 NPN Silicon RF Amplifier Transistor M o to r o la p r e f e r r e d d e v ic e s


    OCR Scan     		PDF MSC2295-BT1/D MSC2295-BT1 MSC2295-CT1 SC-59 MOTOROLA DATE CODE transistor MSC2295–BT1

    Untitled

    Abstract: No abstract text available
    Text: S M T N ETW O R K S P R E C I S I O N T H I N F I L M T E H M o ld ed , 5 0 M il P itc h , D u al-ln -L in e R e s is to r N e tw o rk s N O L O G V T h in F ilm W O M C S e rie s W id e B ody F eatures • Standard 16 and 20 Pin Counts (.300 Wide Body) JEDEC MS-013


    OCR Scan     		PDF MS-013 30-ISRAEL