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    5 MM 850 NM LED Search Results

    5 MM 850 NM LED Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    MM74C911N Rochester Electronics LLC LED Driver, 8-Segment, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-010, DIP-28 Visit Rochester Electronics LLC Buy

    5 MM 850 NM LED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    850 nm LED

    Abstract: 5 mm 850 nm LED 850 nm NIR LED
    Text: Selective Photodiode EPD850-5/0.5 Wavelength range Type Technology Case NIR Integrated filter AlGaAs/GaAs 5 mm plastic lens Description Narrow response range 850 nm peak Heterostructure with integrated filter Applications Optical communications, safety equipment,


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    PDF EPD850-5/0 D-12555 850 nm LED 5 mm 850 nm LED 850 nm NIR LED

    Eye Safety

    Abstract: No abstract text available
    Text: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws


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    PDF 22-Jan-15 Eye Safety

    GEO06647

    Abstract: Q62702-P129 sfh 206
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode SFH 206 K Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit typ. 20 ns • 5-mm-Plastikbauform im LED-Gehäuse • Auch gegurtet lieferbar Features


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    PDF OHF00082 OHF01402 GEO06647 GEO06647 Q62702-P129 sfh 206

    Q62702-P129

    Abstract: GEOY6647 S8050
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode SFH 206 K Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit typ. 20 ns • 5-mm-Plastikbauform im LED-Gehäuse • Auch gegurtet lieferbar Features


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    PDF OHF01402 GEOY6647 Q62702-P129 GEOY6647 S8050

    850 nm LED

    Abstract: GEOY6647 Q62702-P129 S8050
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode SFH 206 K Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit typ. 20 ns • 5-mm-Plastikbauform im LED-Gehäuse • Auch gegurtet lieferbar


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    PDF Q62702-P129 850 nm LED GEOY6647 Q62702-P129 S8050

    Untitled

    Abstract: No abstract text available
    Text: LED Series Sealed Backlights For use with any Vision system • • • • • • • • • • • Rugged, waterproof housing, rated IEC IP67 Mounts directly from the back or surface mount using available brackets Smooth exterior for easy cleaning Diffused backlights for any Vision system. See Banner’s web site www.bannerengineering.com for a complete lighting tutorial


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    PDF LEDIB75X150PW2-XQ

    Untitled

    Abstract: No abstract text available
    Text: CONTROL KNOBS BACKLIT INSTRUMENT PANEL Ambient Light Sensors TCPT1600X01 and TCUT1600X01 Turn and Push Transmissive Sensor MAP LIGHTS NIGHT VISION VSMY98545 SurfLight Infrared Surface Emitter VCNL4020X01 Integrated Proximity and Ambient Light Sensor PLCC2 Plus LED


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    PDF TCPT1600X01 TCUT1600X01 VSMY98545 VCNL4020X01 TCPT1350X01 TCUT1305X01 TEMD5510FX01 TCPT1300X01 TCUT1300X01 TLWY8900

    GEOY6647

    Abstract: OHLY0598
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 206 K Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • 5-mm-Plastikbauform im LED-Gehäuse


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    PDF Q62702P0129 GEOY6647 OHLY0598

    GEOY6647

    Abstract: OHLY0598 S8050
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 206 K Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • 5-mm-Plastikbauform im LED-Gehäuse


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    PDF Q62702P0129 GEOY6647 OHLY0598 S8050

    Untitled

    Abstract: No abstract text available
    Text: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 206 K Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • 5 mm LED plastic package • Also available on tape and reel


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    PDF D-93055

    Untitled

    Abstract: No abstract text available
    Text: 2007-03-30 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 SFH 206 K Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • 5 mm LED plastic package • Also available on tape and reel


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    PDF 20isches D-93055

    LED 6000 8000 mcd blue 465 470

    Abstract: LED 6000 mcd 850 nm LED 2MDR01-85G1A LED green 525 100 leds series circuit blue led 2MDR01-85R1A green energy green LED 3 mm
    Text: High Visibility, Double Reflection LEDs DR-Series Get Twice the Brightness or Use Half the Energy of Typical LEDs • Double reflection structure improves beam directivity for increased brightness comparable to incandescent and similar forms of lighting. • Compact, 8.5 mm diameter LEDs with large luminous area.


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    PDF 56HULHV LED 6000 8000 mcd blue 465 470 LED 6000 mcd 850 nm LED 2MDR01-85G1A LED green 525 100 leds series circuit blue led 2MDR01-85R1A green energy green LED 3 mm

    OHLY0598

    Abstract: OHL01714
    Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4350 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • • • • • • • • Infrarot LED mit hoher Ausgangsleistung


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    Untitled

    Abstract: No abstract text available
    Text: 2013-11-06 Infrared Emitter 850 nm and green GaP-LED (570 nm) Infrarot Sender (850 nm) und grüne GaP-LED (570 nm) Version 1.0 SFH 7251 Features: Besondere Merkmale: • SMT package with IR emitter (850 nm) and green emitter (570 nm) • Suitable for SMT assembly


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    PDF D-93055

    GEXY6271

    Abstract: No abstract text available
    Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4550 Wesentliche Merkmale Features • • • • • • • • Infrarot LED mit hoher Ausgangsleistung Enger Abstrahlwinkel ± 3°


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    Untitled

    Abstract: No abstract text available
    Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung


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    GPLY6880

    Abstract: OHLA0687
    Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung


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    OSRAM IR emitter

    Abstract: infrared temperature measure datasheet LED infrared high power infrared LEd infrared LED 850 nm LED ir led IR LED infrared led 60825-1 IEC 62471 osram
    Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung


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    GPLY6724

    Abstract: OHLA0687
    Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung


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    Untitled

    Abstract: No abstract text available
    Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung


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    GaAs 1000 nm Infrared Diode,

    Abstract: No abstract text available
    Text: GaAs infrared light-emitting diode SIR-5682ST3F This infrared GaAs LED is housed in a compact, transparent, 5 mm plastic housing. It radiates at a wavelength of 850 nm for use with most optical voice or data transmission systems. Dimensions U n its: mm Features


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    PDF SIR-5682ST3F SIR-5682ST3F dSIR-5682ST3F GaAs 1000 nm Infrared Diode,

    Untitled

    Abstract: No abstract text available
    Text: SIR-5682ST3F GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent, 5 mm plastic housing. It radiates at a wavelength of 850 nm for use with most optical voice or data transmission systems. Dimensions U n its: mm Features


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    PDF SIR-5682ST3F 001030S

    L4-17

    Abstract: Optical Switches autofocus
    Text: Selection Guide Peak Wavelength Element nm Material Radiant Flux *’ Cut-off Frequency Emission *4 (mW) (MHz) 2.5 *2 5 - 2.5 *2 5 <t>1.2 - Applications Area (mm) Type No. Listed Page Metal Package LEDs 670 830 850 GaAIAs GaAIAs (with microball lens) 880


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    PDF L6112-01 L6112-02 L3989-01 L3989-02 L7558-01 L7560 L2791 L2791-02 L2683-01 L2683-02 L4-17 Optical Switches autofocus

    SFH317-2

    Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
    Text: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2


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    PDF SFH320-2 SFH320-3 SFH320F-2 SFH320F-3 BP103B-2 BP103B-3 BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH317-2 SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a