SLA5002
Abstract: W1000
Text: SLA5002 Absolute maximum ratings Ratings VDSS VGSS ID 100 ±20 ±5 ±10 PW≤1ms 30 PT θ j-a θ j-c VISO Tch Tstg With built-in flywheel diode Unit Symbol V V A A mJ 5 (PW≤0.5ms, Du≤25%) A 10 (PW≤10ms, Single Pulse) A 120 V 5 (Ta=25°C, with all circuits operating, without heatsink)
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SLA5002
100mA
SLA5002
W1000
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SLA5037
Abstract: No abstract text available
Text: SLA5037 Absolute maximum ratings Ratings VDSS VGSS ID 100 ±20 ±10 ±40 PW≤1ms 200 PT θ j-a θ j-c VISO Tch Tstg Unit V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr •Equivalent circuit diagram 7 4 1 5 Unit Conditions
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SLA5037
100mA
12-pin)
SLA5037
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics Samsung P/N : CL10Y104MR5NJNC Product : Multi-layer Ceramic Capacitor Description : CAP, 100㎋, ±20%, 4V, X7S, 0603 A. Samsung Part Number ① Series ② Size CL 10 Y 104 M R 5 N J N C ①
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CL10Y104MR5NJNC
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics Samsung P/N : CL10Y104MR5NJND Product : Multi-layer Ceramic Capacitor Description : CAP, 100㎋, ±20%, 4V, X7S, 0603 A. Samsung Part Number ① Series ② Size CL 10 Y 104 M R 5 N J N D ①
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CL10Y104MR5NJND
10sec.
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Untitled
Abstract: No abstract text available
Text: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 j Device Latency j Clock Frequency j -260 | -360 I 3 j 2 ; 2 66 j 100 5 100 j
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IBM13M16734BCD
168-Pin
16Mx72
66/100MHz
PC100
19L7292
E93875A
9L7292
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SN7400
Abstract: CMP-04
Text: C M P-04 «ŒJMRS *7 r j -v K ) - I15- PMI (V s = 5 V ,T a= 2 5 V ) r? V,-„ SJJ 1-4V V0 u t = f t 'J' iW = 1 .4 V T,=it(fSi8B 1T ,= S fffit*i 80 Vs = 1 5 V ,J? ia l5 k Q (i£ 2 ) 70 vm = 5 v , f f,.= 5 .ik n r .= *ie *a CMR jc 1 i T,=8i1SIMB 20 25 100
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CMP-04
CMP-04B/F
S15kQ
SN7400
CMP-04
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RG250
Abstract: No abstract text available
Text: - 330 m% - EL2073/C elantec m m V s=±5V # - tr f- 'J s ? • 9 4 A :13ns ± 0 .1 » •GBW : 200MHz • A I ' 1 2 : 0 . 2mV •ffi* liS it:5 0 riA • I Av I =1T$5£ •fe i j V F 7 - * RL=100 T a - 2 5 t; iPX & a Vo<? ?&&FJ7h AA& M E J}uc m W A J lW B m
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EL2073/C
200MHz
EL2073/C
el2073
l-100MHz
RF-RG-250
RG-250
-RG-250
RG250
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DBL 1052
Abstract: No abstract text available
Text: r 3 PRODUCT NUMBER SEE TA B LE -, 100/2. 54 • >i I > i l ¡§I8 lít í 5 3 *4u* rI* C o Ui _. 20 0_ 5, 08 |i Ì 5 JL 5 5“ . 276 7, 01 . 310 7, 87 £? t : u a A t-3 ï—0-£ _ 013 REF. I ' J J Ù L s : tf Ï4 4 IÍ +. 015 005 38 1 , 02 -, 13 040 . 1052. 67
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73REF
V234-32
V70819
68622-Y50
DBL 1052
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FCR16
Abstract: Z-U32 cs 308
Text: MN101CF88GXA - I FCRI6.0M2G Udd= 5 EU] Fig.a~d Ta= 25 Cdeg] o-e Typical 7 5 3 1 I1 7 5 3 1 |1 .5 .3 .1 1 -.3 -.5 400 300 200 100 60 55 JO 45 40 4 3 a. U1H/U1L - 3 _ 11111 4VGi-Uln - - CUl i UIL i b. U2H/U2L ijou V£n 45 ó '< I£ i CUl 3 u § V 1 -J
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MN101CF88GXA
78-\J1
Z-U32
FCR16
Z-U32
cs 308
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EA73029
Abstract: DKR 801961 125Veff DKR-24 e/DKR-24
Text: Relay Modules DKR 5 VDC DKR-5 24 VAC/DC Single Channel DKR 24 VDC DKR 24 VDC Relay coupler DK Housing ML Diagrams Vo Itage tv-j 100 so 60' Vo tage \wm, \s V-l 100 80 Out of Range10 60 40' \mm, Out of Range *0' 20 20 0.1 0.2 0,3 0.4 0.5 0.1 0.2 0.3 0.4 0.5
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Range10
260VAC
75kVeff
C9039986
C9039986
EA73029
DKR 801961
125Veff
DKR-24
e/DKR-24
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PDF
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intel 2716 eprom
Abstract: intel 2816 intel 2816 eeprom EEPROM 2816 B 2716 D EEPROM intel ev 2816 INTEL D 2816 intel EPROM 2816 eprom intel 2816 eprom
Text: i n t e APPLICATION NOTE T AP-100 December 1982 C A f *T & 3r T «is0 . . i ö .w 4 T r ^ j f P | Based on presentation at 1981 International Reliability Physics Symposium, Orlando, Florida, April 7, 1981. Intel Corporation, 1962. 5-1 A P-100 INTRODUCTION
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AP-100
P-100
intel 2716 eprom
intel 2816
intel 2816 eeprom
EEPROM 2816
B 2716 D EEPROM intel
ev 2816
INTEL D 2816
intel EPROM
2816 eprom
intel 2816 eprom
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GC219
Abstract: No abstract text available
Text: STP5N90 STP5N90FI SGS-THOMSON ILKOTQKS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N90 STP5N 90FI j Voss R D S o n Id i 900 V 900 V 2 .4 12 2 .4 12 5 A 2 .8 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STP5N90
STP5N90FI
O-220
STP5N90/FI
GC219
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PDF
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2Sa1491 SANKEN
Abstract: 2SC3855 SANKEN sanken power transistor 2SA1491 2sc3855 2SA1491 transistor 2sa1491 sanken power transistor 2SC3855 VOB-140 FM20 Sanken Transistor Mt 200
Text: SANKEN ELECTRIC CO LTD SSE D • 7^0741 DDOOTlb 247 « S A K J Silicon PN P Epitaxial Planar t ☆ Complement to type 2 SC 38 5 5 2SA1491 Application Exam pi* : - 3 ^ • Outline Drawing 2 . MT-100 T03P Audio and General Purpose Electrical Characteristics
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2SA1491
2SC3855
T-33-23
MT-100
Ta-25
2SA1491
-100max
140min
50min
2Sa1491 SANKEN
2SC3855 SANKEN
sanken power transistor 2SA1491
2sc3855
transistor 2sa1491
sanken power transistor 2SC3855
VOB-140
FM20
Sanken Transistor Mt 200
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1-487526-4
Abstract: DD313 487769-2
Text: AMP Catalog 82007 Flexible Film Products Revised 8-96 .1 0 0 [2 .5 4 ] Centerline Single R o w S lim -Lin e Receptacle Housings M ateria l: Black thermoplastic, flame retardant, 9 4V -0 rated .540 [13.72] Plain .098 [2.49] .100 T [2.54] J yp- i r \ * + .047
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2N4347
Abstract: 3632N w15c
Text: 2N 4347 NPN SILICON TRANSISTOR, HOMOBASE TRANSISTOR NPN SILICIUM , HOMOBASE LF large signal power amplification Amplification de puissance de grands signaux BF Thermal fatigue inspection Contrôle en fatigue thermique v CEO 120 V 5 A *tot 100 W Rth j-c
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CB-19
2N4347
2N4347
3632N
w15c
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Untitled
Abstract: No abstract text available
Text: SA NK EN E L E C T R I C CO LTD STA303A 5 5 E ]> • 7T Î0 74 1 0 0 0 1 0 ^ 2 bl3 H S A K J Silicon NPN Triple Diffused Planar Darlington ■Maxim um Ratings " ' ' ■ Item , . ' rra=2 5 o Symbol Ratings Unit VCBO 120 V Collector-to-Emitter Voltage VCEO 100
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STA303A
STA300
STA400
45max
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PDF
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LT» SSE » • 7^07141 □□OO'JÌS 'ìbH « S A K J Silicon NPN Triple Diffused Planar 2SC4302 ☆ High Voltage High Speed Switching T ransistor Application Example : Sw itching Regulator and General Purpose • Outline Drawing 5 . .FM 100
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2SC4302
100max
FM100
45x01
MT-25
T0220)
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PDF
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MPY600
Abstract: MPY600AP 25VY
Text: 185 - MPY600 v ± V CC = ± id 5 V , *?• m ( 0 ^5 # Burr B r o w n T a= 2 5 r ) 4k ft MPY600AP * 'h ; * * ¥ 1 * £ ± 1 ,- y2 ± 2 y z ,- z 2 ± 2 A-umtEmw ± 2 .2 V ± 2 .5 V TtyM v 100 / / l . 5 h l E K 'J - 7 Y +l 11 > I SV R «E a t) m sm m c a
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MPY600
MPY600AP
58MHZ-C
58MHzT-0
500kHz,
/-500kHz,
MPY600AP
25VY
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8893
Abstract: EX 87.B.1038 M38C37ECMFP
Text: M38C37ECMFP FCR8.0MC5 Fig.a~e Udd= 5 [U] Q a. U1H/U1L I I I b. U2H/U2L U2H EU] I I C, .3 .1 -.1 -.3 -.5 400 300 200 100 60 55 50 45 40 4 I FQ5C I I I 5 2 5 2 tì=- I I I I I I y r — é— 5 2 1 I I I I I L_ I I l_ I I L_ J I I- I L_ -V I - e-0
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M38C37ECMFP
8893
EX 87.B.1038
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H0050
Abstract: No abstract text available
Text: 2 .Sch em atic: 1. D im ensions: 1 o— ^ k^ — o 10 Line D 0.100 r r> 0.490 Max^j 10 ñ ñ ñ ñ X X FM R S o in m XFADSL58S o 100 u H ± 5 10KH z 0.1V Tie Pins 2& 4 LL: Pins 1 - 5 5.0uH Max 100KH z 100m V (Tie F y y y y y 5 0CL: Pins 1 - 5 o YYWW •
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XFADSL58S
100uHÂ
10KHz
100KHz
100mV
1875Vrms,
500uA
20KHz,
UL94V-0
E151556
H0050
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t1p41
Abstract: T1P-41
Text: 387 5 0^ 1 G E SO L I D S T A T E DE 3 0 7 5 0 0 1 O D I T H D ? 0 J~" TIP 41 Series NPN POWER TRANSISTORS 40-100 VOLTS 6 AMP, 65 WATTS COMPLEMENTARY TO THE TIP42 SERIES The TIP4,1 Series power transistors are designed for use in general purpose amplifier and switching applications.
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TIP42
T0-220AB
T0-220-AB
t1p41
T1P-41
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PDF
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2SA1490 SANKEN
Abstract: 2SC3854 sanken 2SC3854 2SA1490 transistor 2sc3854 H122 FM20 sanken audio
Text: SANKEN ELECTRIC CO LTP SSE » 7^0741 ODDO^IS 30Ü « S A K J Silicon PN P Epitaxial Planar ☆ Complement to type 2S C 3 8 5 4 2SA1490 e Outline Drawing 2- -M T-100 T03P Application Example : Audio and General Purpose (Ta=25’C) Electrical Characteristics
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2SA1490
2SA1490
2SC3854
MT-10CXT03P)
-100max
120min
50min
20typ
2SA1490 SANKEN
2SC3854 sanken
2SC3854
transistor 2sc3854
H122
FM20
sanken audio
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Untitled
Abstract: No abstract text available
Text: TLS1255 VIDEO PREAMPLIFIER SYSTEM WITH ON-SCREEN DISPLAY OSD MIXER SLVS14 2 - DECEMBER 1996 Wide Bandwidth . . . Typ 100 MHz at - 3 dB Mixer Function for OSD Applications Blanking Function for On-Screen Display (OSD) Applications F L V ID E O J N [ 4 R „C LA M P _C A P [ 5
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TLS1255
SLVS14
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Untitled
Abstract: No abstract text available
Text: £A NK£N _E LECTRIC CO LTD S5E » • 7 ^ 0 7 4 1 000J178 124 M s a k j SMA4030 Silicon NPN Triple Diffused Planar Darlington IMaximum Ratings a ififiiiifg iif Collector-to-Base Voltage Ta=2 5 o VCBO 120 Collector-to-Emitter Voltage VCEO 100 V Emitter-to-Base Voltage
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000J178
SMA4030
DuS50%
STA300
STA400
45max
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