DIODE 83A
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM4501JPT CURRENT 8.3 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM4501JPT
DIODE 83A
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 30 Volts CHM8401JPT CURRENT 7.5 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM8401JPT
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CHM4501JGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM4501JGP CURRENT 8.3 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
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CHM4501JGP
CHM4501JGP
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Untitled
Abstract: No abstract text available
Text: DPZG5024-5-DPZG5040-5 Press-fit Bosch Glass Passivation Diodes 特征 PF-5 FEATURES .50安培工作温度为125度,无热损耗下. 50 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current
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DPZG5024-5--DPZG5040-5
MIL-STD-202,
DPZG5024-5
DPZG5028-5
DPZG5040-5
DPZG5040-5
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Untitled
Abstract: No abstract text available
Text: DPZG3524-5-DPZG3540-5 Press-fit Bosch Glass Passivation Diodes 特征 PF-5 FEATURES .35安培工作温度为125度,无热损耗下. 35 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current
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DPZG3524-5--DPZG3540-5
MIL-STD-202,
DPZG3524-5
DPZG3528-5
DPZG3540-5
DPZG3540-5
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RUTTONSHA 40 hm 160
Abstract: 70 HM ruttonsha RUTTONSHA 40 hm RUTTONSHA 85 HM ruttonsha RUTTONSHA 40 hm 120 RUTTONSHA POWER DIODE 40 hmr 120 70 hmr 160 100 hmr ruttonsha
Text: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 85 Ampere Silicon Power Diodes FEATURES ❖ Diffused series. ❖ Available in normal & reverse polarity. ❖ Device conforms to IS 3700 III & IS 4400 (III). ❖ Device outline conforms to IS 5000 (Do. 5).
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herrmann bridge rectifier
Abstract: chasis diodes herrmann herrmann silicon bridge rectifier bridge herrmann
Text: Bulletin 55 - 504 KHEL Khandelwal Herrmann Electronics Limited VRRM : 50 - 1000 Volts V RMS : 20 - 500 Volts I O AVG : 5 Ampere TECHNICAL SPIFICATIONS OF SILICON BRIDGE RECTIFIER DIODES TYPE 5KHBS05 TO 5KHBS10 FEATURES • Low Cost • Compact Potted Version
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5KHBS05
5KHBS10
5KHBS10)
Plot-101,
herrmann bridge rectifier
chasis
diodes herrmann
herrmann silicon bridge rectifier
bridge herrmann
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RUTTONSHA all diodes
Abstract: 40 hmr 160 70 hmr ruttonsha 70 hmr 160 40 hmr 120 RUTTONSHA 120 RUTTONSHA diodes 61 HMR 20 RUTTONSHA 100 hmr ruttonsha
Text: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 60 Ampere Silicon Power Diodes FEATURES ❖ Diffused series. ❖ Available in normal & reverse polarity. ❖ Device conforms to IS 3700 III & IS 4400 (III). ❖ Device outline conforms to IS 5000 (Do. 5).
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Herrmann KB 60
Abstract: herrmann bridge rectifier Herrmann KB 64 Khandelwal Herrmann Electronics bridge herrmann 10mSEC Herrmann Khandelwal KHEL
Text: Bulletin 55 - 508 KHEL Khandelwal Herrmann Electronics Limited Voltage : 100 - 1000 Volts Current : 35 Ampere TECHNICAL SPIFICATIONS OF SINGLE PHASE BRIDGE RECTIFIER DIODES TYPE 35KHBS 11.0 FEATURES 1.6 22 .0 0.8 • Low Cost 10 .5 • Compact Potted Version
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35KHBS
Plot-101,
Herrmann KB 60
herrmann bridge rectifier
Herrmann KB 64
Khandelwal Herrmann Electronics
bridge herrmann
10mSEC
Herrmann
Khandelwal
KHEL
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Untitled
Abstract: No abstract text available
Text: DPZ3524-5-DPZ3540-5 Press-fit Bosch Diodes 特征 PF-5 FEATURES .35安培工作温度为125度,无热损耗下. 35 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability
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DPZ3524-5--DPZ3540-5
MIL-STD-202,
DPZ3524-5
DPZ3528-5
DPZ3540-5
DPZ3540-5
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Untitled
Abstract: No abstract text available
Text: DPZ5024-5-DPZ5040-5 Press-fit Bosch Diodes 特征 PF-5 FEATURES .50安培工作温度为125度,无热损耗下. 50 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability
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DPZ5024-5--DPZ5040-5
MIL-STD-202,
DPZ5024-5
DPZ5028-5
DPZ5040-5
DPZ5040-5
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RUTTONSHA all diodes
Abstract: HMR120 RUTTONSHA RUTTONSHA 40 hm RUTTONSHA 40 hm 160 RUTTONSHA 25 hmr 40 70 HM ruttonsha 40 hmr 120 40 hmr 160 RUTTONSHA 25 hmr
Text: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 25/40 Ampere Silicon Power Diodes FEATURES Y All diffused series. Y Available in normal & reverse polarity. Y Device conforms to IS 3700 III & IS 4400 (III). Y Device outline conforms to IS 5000 (Do. 5).
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CHM730GPAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 400 Volts CHM730GPAGP CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM730GPAGP
O-252)
250uA
CHM730GPAGP
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2SA1046
Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated
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2N6497
2N6498
2N6498*
TIP73B
TIP74
TIP74A
TIP74B
2SA1046
BU108
BU326
BU100
BD262
2sb688 y
2n5632
bd876
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TIP36
Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —
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MJ410
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
TIP36
BD413
2SC331
BD139.6
BD139.10
BDW59
2sc2159
BD139.16
BD419
2SD364
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SO-8 gs 069
Abstract: 552 diode
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM9535JPT CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. SO-8
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CHM9535JPT
SO-8 gs 069
552 diode
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CHM4426JGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM4426JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. SO-8
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CHM4426JGP
CHM4426JGP
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6b8g
Abstract: Tube 6B7 6b7 tube Scans-0017381 6B-7
Text: 6 B 7 ,6 B 8 g 2B7 TUNG-SOL DUO-DIODE PENTODE A M P LIFIE R COATED UN I POTENTIAL CATHODE 287 - 2 . 5 VOLTS 0 . 8 AMPERE 6B7 - 6 . 3 VOLTS 0 . 3 AMPERE 6B8G - 6 . 3 VOLTS 0 . 3 AMPERE AC OR DC GL ASS BULB 2 B 7 . 6B7 SMALL 6B8G IRTED METAL CAP ANY MOUNTING POSITIO N
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M8-210
6b8g
Tube 6B7
6b7 tube
Scans-0017381
6B-7
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6B6g
Abstract: newark Scans-0017380
Text: 7 5.6 B6G 2A6 TUNG-SOL DUO-DIODE HIGH-MU T RI O DE A M P L I F I E R COATED UN I PO TE NT IA L CATHODE 2 . 5 VOLTS 0 . 8 AMPERE 6 . 3 VOLTS 0 . 3 AMPERE 6 . 3 VOLTS 0 . 3 AMPERE AC OR DC GL ASS BULB 6B6G 2 A 6 , 75 SMALL ANY MOUNTING P O S I T I O N METAL
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Tube 6B7
Abstract: 6b8g
Text: 2B7, 6 B 7 6 B 8 G TUNG-SOL D U O - D I ODE PENTODE A M P L I F I E R COATED UN I POTENT IAL CATHODE 2B7 - 2 . 5 VOLTS 0 . 8 AMPERE 6B7 - 6 . 3 VOLTS 0 . 3 AMPERE 6886 - 6 . 3 VOLTS 0 . 3 AMPERE AC OR DC GL ASS BULB 2B 7, 6B7 SMALL 6B86 ìTED METAL CAP
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M8-210
Tube 6B7
6b8g
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6b8g
Abstract: Tube 6B7
Text: 2B7, 6B8 g S B ? TUHG-SOL D U O -D IO D E PENTODE A M P L I F I E R COATED UN I PO TENTIAL CATHODE 2B7 - 2 . 5 VOLTS 0 . 8 AMPERE 6B7 - 6 . 3 VOLTS 0 . 3 AMPERE 6B86 - 6 . 3 VOLTS 0 . 3 AMPERE AC OR DC G L A S S BU LB 2 B 7 , 6B 7 SMALL 6B8G METAL SK IRTED
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M8-210
6b8g
Tube 6B7
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200 ampere MOSFET
Abstract: 200 Ampere power transistor diode 5 ampere FS10UM-5 transistor 5 100V, 200 A MOSFET igbt 600V 450v mosfet mosfet fs series transistor FS 10 SM
Text: mNEREX Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 MOS Numbering System DiSCtOtC IGBT Example: CT 75 AM - 12 (6 ) (3) (4) (5) CT75AM-12 is a 75 Ampere, 600V, Lead Mount, Insulated Gate Bipolar Transistor (5) Drive Voltage
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CT75AM-12
FS10UM-5
O-220AB,
O-220AB
O-220FN
O-220S
200 ampere MOSFET
200 Ampere power transistor
diode 5 ampere
transistor 5
100V, 200 A MOSFET
igbt 600V
450v mosfet
mosfet fs series
transistor FS 10 SM
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29VDC
Abstract: 14 pin plug in relay 6PDT relay MH-18D-6VDC
Text: Ratings 6PDT 6 form C contacts. 5 amp @ 29VDC. 2 amp @ 115VAC Description Miniaiure 6PDT relay 5 ampere contact rating A C or D C coils 50g operational shock Temperature range: MH: - 55r'C to +S5°C MHB, MHJ: -6 5 ° C to -f125cC Vibration level: MH. MHB: up to ICOOHz at 15q
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29VDC.
115VAC
-f125cC
2000Hz
29VDC
115VAC,
400Hz
MHJ-18A-115VAC
420Hz
MH-18D-6VDC
14 pin plug in relay
6PDT relay
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Untitled
Abstract: No abstract text available
Text: UG1ATHRU UG1D ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1 . 0 Ampere FEATURES DO-2Q4AL Î 1.0 2 5 .4 MIN. 0. 1 0 7 (2 .7) I 0.0 8 0 (2 .0) ' DIA. 0.205 (5 .2) 0. 1 6 0 (4 . 1) I Î 1.0 (2 5 .4) MIN. 0.034 (0.86)
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