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    Text: HITACHI / OPTOELECTRONICS SIE D • 4tHb205 001100*1 37=1 » H I T 4 T -3 ^ -// GN6010A Silicon N Channel IGBT HITACHI Application Mar. 1992 TO -220A B High speed power switching Features • High speed switching tf = 150 ns typ, 350 ns max • Low on saturation voltage


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    PDF 4tHb205 GN6010A -220A Coll500 31-ll O-22QAB