1N3086
Abstract: 4SS54S2
Text: INTERNATIONAL RECTIFIER 5bE D • 4SS54S2 □□10b7 a 4 international Iis r I Rectifier Rectifiers, Standard Recovery 100 TO 200 AMPS Part RRM FSM (1 50Hz 60Hz 'F(AV) number (V) 1N3288A 1N3289A 1N3290A 1N3291A 1N3292B 1N3293A 1N3294A 1N3295A 1N3296A 150K5A
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4SS54S2
1N3288A
1N3289A
1N3290A
1N3291A
1N3292B
1N3293A
1N3294A
1N3295A
1N3296A
1N3086
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IGBT 500V 50A
Abstract: mosfet 600V 50A diode C435 50a rectifier circuit mosfet 500V 50A
Text: International S Rectifier Provisional Data Sheet PD-9.1151 IRGNIN050M06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT VŒ = 600V lc = 50A V ce ON < 2.0V .Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail“ losses .Short circuit rated
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IRGNIN050M06
C-436
4SS54S2
00SQ22b
IGBT 500V 50A
mosfet 600V 50A
diode C435
50a rectifier circuit
mosfet 500V 50A
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Untitled
Abstract: No abstract text available
Text: PD-9.1068 In te rn atio n al Rectifier_ 1RF740LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Cos& Crss Extremely High Frequency Operation Repetitive Avalanche Rated
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1RF740LC
D-6380
Q021S61
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IRFI840GLC
Abstract: No abstract text available
Text: PD-9.1208 International i » r Rectifier IRFI840GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm
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IRFI840GLC
D-6380
0021b77
IRFI840GLC
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Untitled
Abstract: No abstract text available
Text: PD-9.928 International lili] Rectifier IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR Fast-Speed IGBT • • • • • • Hermetically sealed Isolated Latch-proof Simple gate drive High operating frequency Switching-loss rating includes all “tail” losses
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IRGVH50F
IRGVH50FD
IRGVH50FU
O-258
55MS2
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET
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1393C
IRHM7264SE
250Volt,
4SS54S2
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Untitled
Abstract: No abstract text available
Text: International [îô^Rectifier HFA105NH60R H EXFRED " Ultrafast, Soft Recovery Diode PD-2.443 LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V V f = 1.5V i T i Qrr* = 1200nC
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HFA105NH60R
1200nC
40A/ps
Liguria49
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Untitled
Abstract: No abstract text available
Text: PD-9.1002 international io r Rectifier IRFI744G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V qss - 4 5 0 V ^DS on = 0.63£2
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IRFI744G
O-220
D-8360
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