Untitled
Abstract: No abstract text available
Text: Bulletin 125154/B International ^ R e c t if ie r s t 330c .l s e rie s PHASE CONTROL THYRISTORS Hockey Puk Version Features 650A • Center amplifying gate ■ Metal case with ceramic insulator ■ International standard case T0-200AC B-PUK ■ High profile hockey-puk
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125154/B
T0-200AC
ST330C.
D-324
T330C
D-325
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Untitled
Abstract: No abstract text available
Text: International 4655455 0015476 651 • • • • • • PD-9 588B IRFP244 Rectifier HEXFET P o w e r M O S F E T H I NR INTERNATIONAL REC TIFIER Dynam ic dv/dt Rating Repetitive Avalanche Rated Isolated Central M ounting Hole Fast Switching Ease of Paralleling
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IRFP244
O-247
O-220
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Untitled
Abstract: No abstract text available
Text: International e ?r R ectifier HEXFET P o w e r M O S F E T • • • • • 4655452 0015175 b^O H I N R PD-9.646A IRFI830G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating
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IRFI830G
O-220
4S55452
1RFI830G
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Untitled
Abstract: No abstract text available
Text: PD-9.1069 International ioR R ectifier IRF840LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated
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IRF840LC
D-6380
0021b21
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irfip9140
Abstract: marking 44t
Text: m 4055452 003,5350 oöe minr pd-9.857 IRFIP9140 International i»r Rectifier HEXFET Power M O S F E T • • • • • • • INTERNATIONAL RECTIFIER bSE D Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm
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IRF1P9140
O-247
\50Kn
irfip9140
marking 44t
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6CW 60
Abstract: 6cw 50 D474 6cw 03 D-474 6CWQ09F 6CW 80
Text: 4fi5545E D01241G 314 • INR STE D PD-2.315 INTERNATIONAL RECTIFIER International g»!Rectifier 6CWQ09F 6CWQ10F SCHOTTKY RECTIFIER 6.6 Amp Major Ratings and Characteristics Description/Features Characteristics 6CWQ.F Units lF AV Rectangular waveform 6.6
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4fi5545E
D01241G
6CWQ09F
6CWQ10F
Tj-25
4A55452
0D12413
6CW 60
6cw 50
D474
6cw 03
D-474
6CW 80
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2N7219
Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 JANTX2N7219 "‘ JANTXV2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International
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IRFMS40
JANTXSN7S19
JANTXV2N7219
MIL-S-19500/5S6]
IRFM240D
IRFM240U
O-254
MIL-S-19500
2N7219
555C
IRFM240
JANTXV2N7219
2N7219 JANTX
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Untitled
Abstract: No abstract text available
Text: » * i International Rectifier P D -9.1231 IRFP450LC H E X FE T Pow er M O S F E T • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, CoSS, C^ss Isolated Central Mounting Hole Dynamic dv/dt Rated
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IRFP450LC
4A5S452
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Maxlinear
Abstract: No abstract text available
Text: Bulletin 125158/B International S R ectifier ST300S S E R IE S PHASE CONTROL THYRISTORS Stud Version Features 300A • C enter a m plifying gate ■ H erm etic m etal case w ith ceram ic insulator ■ In ternational standard case TO -209AE TO -118 ■ Threaded studs UNF 3/4 - 16UNF2A or ISO M 24x1.5
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125158/B
ST300S
-209AE
16UNF2A
D-269
4A55M52
Q0E70b5
D-270
Maxlinear
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Untitled
Abstract: No abstract text available
Text: 4Ô55M52 0Ü15ÔD2 b43 International !“R Rectifier PD-9.827 IRFZ46 HEXFET Power M O S FE T • • • • • 11 NR IN T E R N A T IO N A L R E C T IF IE R Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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55M52
IRFZ46
55M5S
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Transistor C604
Abstract: No abstract text available
Text: PD - 9.780A International ïo r Rectifier IRGP430U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGP430U
O-247AC
4S55452
002D3m
Transistor C604
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Untitled
Abstract: No abstract text available
Text: International [gag Rectifier 4 6 55 45 2 D D l S 4 3 b 3T2 • INR HEXFET Power MOSFET INTERNATIONAL R E C T I F I E R • • • • • • PD-9.583B IRFP044 Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching
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IRFP044
O-247
4S55452
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s1bc
Abstract: EC120 ELNE FS18C
Text: INTERNATIONAL RECTIFIER 05 DE~| 4ÛSS45E DODTbDT 7 | I IÇ?K 1i n t e r n a t i o n a l , r e c t i f i e r T-25-19 Data Sheet No. PD-3.121 S18C & S18CH SERIES 1200-600 VOLTS RANGE 165 AMP RMS, CENTER AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS
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T-25-19
S18CH
O-209AC
209AC
208AD
s1bc
EC120
ELNE
FS18C
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5460a
Abstract: 5L02 S77R10A S77R12A 83bb 44580
Text: XÖR1 , iin i fchxrMA^i iùìnal. -—- Data S heet No. PD-3.113 os DE I 4055455 DDD7BE5 2 | 4855452 INTERNATIONAL RECTIFIER 02E 07825 D '7~~¿2£T-jL-f r e c tifie r S77R SERIES 1200-1000 VOLTS R A N G E 5450 AM P RMS, RING AMPLIFYING GATE
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S77R12A
S77R10A
S0000
5460a
5L02
83bb
44580
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