Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4PIN TRANSISTOR Search Results

    4PIN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP172AM Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/0.5 A, 3750 Vrms, 4pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP172GM Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 350 V/0.11 A, 3750 Vrms, 4pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP176AM Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/0.7 A, 3750 Vrms, 4pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP170GM Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 350 V/0.11 A, 3750 Vrms, 4pin SO6 Visit Toshiba Electronic Devices & Storage Corporation

    4PIN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TLP621F

    Abstract: TLP521 4pin ic TLP521 MOSFET DRIVER TLP151 tlp762 TLP250 MOSFET DRIVER application note 4N26 Photodiode TLP521 SOP-4 TLP3507 TLP250 igbt driver applications
    Text: 2. Selection Guide 6 5 4 2 1 3 4N38 SHORT 4N38A(SHORT) 6 MFSOP6 (4pin) (Mini Flat) AC input 1 6 3 4 MFSOP6 (4pin) (Mini Flat) Standard TLP121 1 6 3 4 MFSOP6 (4pin) (Mini Flat) Low input current TLP124 1 3 6 4 MFSOP6 (4pin) (Mini Flat) AC input Low input current


    Original     		PDF 4N38A 4N38A TLP121 TLP124 TLP597G TLP599A TLP598G TLP598A TLP598B 54SOP6 TLP621F TLP521 4pin ic TLP521 MOSFET DRIVER TLP151 tlp762 TLP250 MOSFET DRIVER application note 4N26 Photodiode TLP521 SOP-4 TLP3507 TLP250 igbt driver applications

    Untitled

    Abstract: No abstract text available
    Text: < Small Signal InGaP HBT > MGF3021AM 4pin flat lead package DESCRIPTION The MGF3021AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		PDF MGF3021AM MGF3021AM

    Untitled

    Abstract: No abstract text available
    Text: < Small Signal InGaP HBT > MGF3022AM 4pin flat lead package DESCRIPTION The MGF3022AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		PDF MGF3022AM MGF3022AM 32dBm

    Untitled

    Abstract: No abstract text available
    Text: < Small Signal InGaP HBT > MGF3021AM 4pin flat lead package DESCRIPTION The MGF3021AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		PDF MGF3021AM MGF3021AM

    Untitled

    Abstract: No abstract text available
    Text: < Small Signal InGaP HBT > MGF3022AM 4pin flat lead package DESCRIPTION The MGF3022AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		PDF MGF3022AM MGF3022AM 32dBm

    mgf4935am

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4935AM 4pin flat lead package DESCRIPTION The MGF4935AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4935AM MGF4935AM 12GHz 15000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4921AM MGF4921AM

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4936AM MGF4936AM 12GHz MGF4936AM-75 15000pcs/reel

    MGF4934

    Abstract: mgf4934cm MGF4934CM-75 130/KU 601
    Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934CM MGF4934CM 12GHz MGF4934CM-75 15000pcs/reel MGF4934 130/KU 601

    MGF4931AM

    Abstract: MGF4931 77153
    Text: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4931AM MGF4931AM 12GHz 15000pcs/reel MGF4931 77153

    MGF4921AM

    Abstract: 5442
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4921AM MGF4921AM 15ric 5442

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4965BM MGF4965BM 20GHz 15000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4965BM MGF4965BM 20GHz 15000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4936AM MGF4936AM 12GHz MGF4936AM-75 15000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934BM MGF4934BM 12GHz MGF4934BM-75 15000pcs/reel

    MGF4921AM

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4921AM MGF4921AM

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934CM MGF4934CM 12GHz MGF4934CM-75 15000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934BM MGF4934BM 12GHz MGF4934BM-75 15000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934AM MGF4934AM 12GHz 3000pcs/reel

    InGaAs HEMT mitsubishi

    Abstract: 4pin transistor top 205 MGF4934AM GD-30
    Text: Feb./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934AM MGF4934AM 12GHz InGaAs HEMT mitsubishi 4pin transistor top 205 GD-30

    mitsubishi 7805

    Abstract: MGF4934AM
    Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF May/2007 MGF4934AM MGF4934AM 12GHz 3000pcs/reel mitsubishi 7805

    GD-30

    Abstract: MGF4931AM 77153
    Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153

    GD-30

    Abstract: No abstract text available
    Text: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934CM MGF4934CM 12GHz GD-30

    GD-30

    Abstract: MGF4934AM
    Text: July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF July/2007 MGF4934AM MGF4934AM 12GHz GD-30