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    4N29 MOTOROLA Search Results

    4N29 MOTOROLA Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
    AS8397- Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc

    4N29 MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    opto 4N33

    Abstract: 4N32-1 4N33 Data sheet 7500 IC 14 PIN 4N29 4N29A 4N30 4N31 4N32 4N33
    Text: MOTOROLA Order this document by 4N29/D SEMICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 * 4N31 4N32 * 4N33 * GlobalOptoisolator 6-Pin DIP Optoisolators Darlington Output [CTR = 100% Min] The 4N29/A, 4N30, 4N31, 4N32 1 and 4N33(1) devices consist of a gallium


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    PDF 4N29/D 4N29A 4N29/A, 4N29/D* opto 4N33 4N32-1 4N33 Data sheet 7500 IC 14 PIN 4N29 4N29A 4N30 4N31 4N32 4N33

    CNY37

    Abstract: MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47
    Text: CR104/D GENERAL INSTRUMENT-TO-MOTOROLA OPTOELECTRONICS CROSS REFERENCE ISOLATORS General Instrument MOTOROLA Code General Instrument MOTOROLA Code 4N25, A 4N25, A A MCP3009, 10 MOC3009, 10 A 4N26 4N26 A MCP3011, 3011A MOC3011 A 4N27 4N27 A MCP3012 MOC3012


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    PDF CR104/D MCP3009, MOC3009, MCP3011, MOC3011 MCP3012 MOC3012 MCP3020, MOC3020, MCP3022, CNY37 MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47

    TRANSISTOR D 2627

    Abstract: 4N32 4N33 MOTOROLA 4N29 4N29A 4N31 4N32A 2N6165 4N324
    Text: 4N29,4H29A 4H30 4H31 4N32.4N324 NPN PHOTOTRANSISTOR AND PN INFRARED EMITTING DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Darlington Transistor designed for applications requiring electrical, isolation, high-current transfer ratios, small package size and low


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    PDF 4H29A 4N324 60HZA 1N4003 2N6165 l-J77/3 TRANSISTOR D 2627 4N32 4N33 MOTOROLA 4N29 4N29A 4N31 4N32A 2N6165 4N324

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


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    PDF TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note

    cosmo 817

    Abstract: KP1010 cosmo kp1010 817 cosmo cosmo KP1010 cosmo 4N35 KP1010 PHOTO COUPLER cosmo 817 c tlp281 cross reference vishay TLP421-4
    Text: Photo Coupler COSMO SHARP NEC TOSHIBA KPS2801 PC3H2 PS2801-1 TLP281 KP1010 PC817 PC123 PS2501-1 PS2561-1 TLP421 TLP521 TLP621 KP1020 PC827 PS2501-2 PS2561-2 KP1040 PC847 PS2501-4 PS2561-4 TLP421-2 TLP521-2 TLP621-2 TLP421-4 TLP521-4 TLP621-4 K2010 PC4N35 PS2601


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    PDF KPS2801 PS2801-1 KP1010 PS2501-1 PS2561-1 TLP421 TLP521 TLP621 KP1020 PC827 cosmo 817 KP1010 cosmo kp1010 817 cosmo cosmo KP1010 cosmo 4N35 KP1010 PHOTO COUPLER cosmo 817 c tlp281 cross reference vishay TLP421-4

    optocoupler crossreference

    Abstract: fairchild optocoupler cross reference MOC256 H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M
    Text: AC Input Phototransistor Small Outline Surface Mount Optocoupler MOC256 The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the


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    PDF MOC256 E90700, InputC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M optocoupler crossreference fairchild optocoupler cross reference H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M

    H11B817

    Abstract: H11L1M Triac 4N35 0811 triac optocouplers 4n35 4N32 pinout H11B817B motorola triac catalog
    Text: Fairchild Semiconductor Optoelectronic Components Optoelectronic Components All optoisolators are UL recognized under file number E90700 and are also available with VDE approval to specification 0884/6.60 certificate number 35025. -M white package, formerly Motorola.


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    PDF E90700 MCT62 HCPL-0500 H11G1 H11G2 H11G3 H11AA1 H11AA4 H11AA814 H11C1 H11B817 H11L1M Triac 4N35 0811 triac optocouplers 4n35 4N32 pinout H11B817B motorola triac catalog

    MOC223

    Abstract: MOCD223M H11AA2M MOC 4N25 MOC223R2M H11AA4M MOC3062M MOC3081M 4N35M H11D1M
    Text: Small Outline Optoisolators MOC223 Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density


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    PDF C215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M MOC3163-M MOC223 MOCD223M H11AA2M MOC 4N25 MOC223R2M H11AA4M MOC3062M MOC3081M 4N35M H11D1M

    opto transistor moc

    Abstract: MOCD211 H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M
    Text: Dual Channel Small Outline Optoisolators MOCD211 Transistor Output The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high


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    PDF MOCD211 E90700, InformC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M opto transistor moc H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M

    D217 OPTO

    Abstract: MOC 4N25 MOCD217 Opto Coupler 4N33 MOCD217R2M 4N33 "cross reference" moc opto h11d1 motorola MOC3041-M application notes 4N25A
    Text: Dual Channel Small Outline Optoisolators MOCD217 Transistor Output Low Input Current The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high


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    PDF MOCD217 RS481A InpC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M D217 OPTO MOC 4N25 Opto Coupler 4N33 MOCD217R2M 4N33 "cross reference" moc opto h11d1 motorola MOC3041-M application notes 4N25A

    D223 OPTO

    Abstract: darlington optocoupler cross reference MOCD217M H11AA2M MOC8204M H11AA4M H11G2M MOC3081M H11D1M 4N32M
    Text: Dual Channel Small Outline Optoisolators MOCD223 Darlington Output The MOCD223 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline, plastic package. It is ideally


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    PDF MOCD223 3C215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M D223 OPTO darlington optocoupler cross reference MOCD217M H11AA2M MOC8204M H11AA4M H11G2M MOC3081M H11D1M 4N32M

    H11D1M

    Abstract: motorola 4n35 MOCD208-M 17434 MOTOROLA 813 transistor CNY17 pulse circuit H11AA4M H11G2M H11AV1M MOC8050M
    Text: MOC8100 GlobalOptoisolator 6-Pin DIP Optoisolator Transistor Output The MOC8100 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. It is designed for applications requiring higher output collector current IC with lower input


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    PDF MOC8100 C215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M H11D1M motorola 4n35 MOCD208-M 17434 MOTOROLA 813 transistor CNY17 pulse circuit H11AA4M H11G2M H11AV1M MOC8050M

    216 OPTO SO8

    Abstract: MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M
    Text: Transistor Output Low Input Current These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density


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    PDF MOC215, andC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M 216 OPTO SO8 MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M

    H11D1M

    Abstract: Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M
    Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.


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    PDF MOC211, MOCC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M H11D1M Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M

    CNY57A

    Abstract: CNY62 sharp pc613 CNY63 CNY57 QTC 4N35 MOC7811 sensor MOC7811 QTC 4N25 hafo 3c63b
    Text: Tem ic Semiconductors Cross Reference List Opto Corapetltwn-Type Isolators 3C63B 3C63C 3C91B 3C91C 3C92B 3C92C 3N243 3N244 3N245 3N281 4N25, 25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N33 4N35 4N37 4N38 CLA7 CLA7AA CNX21 ' CNX35 ; CNX36 CNX38 1CNX82 i CNX83


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    PDF 3C63B 3C63C 3C91B 3C91C 3C92B 3C92C 3N243 3N244 3N245 3N281 CNY57A CNY62 sharp pc613 CNY63 CNY57 QTC 4N35 MOC7811 sensor MOC7811 QTC 4N25 hafo 3c63b

    4n29 Motorola

    Abstract: 4T-05
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA <Ê> «1 C ; ® ® ® ® VDE UL CSA SEMKO DEMKO NEMKO se n BAST GlobalOptolsolator 6 -Pin D IP O p to lso la to rs D arlin gto n O utput The 4N29/A, 4N30,4N31,4N320 and 4N33 1) devices consist of a gallium arsenide Infrared emitting diode optically coupled to a monolithic silicon


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    PDF 4N29/A, 4N320) 4N29A 4n29 Motorola 4T-05

    4n32

    Abstract: 4N33 Motorola
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 6-Pin D IP O p to is o la to r s Darlington Output Each device c o n sists of a galliu m arse nid e infrared em itting d io d e optically co up led to a m on olith ic silicon pho to d arlin gto n detector.


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    PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, 30A-02 4n32 4N33 Motorola

    4n33

    Abstract: No abstract text available
    Text: M O T O R O L A SC D I O D E S / O P T O t,3 b ? 2 5 5 b4E » N0 T7 OüflbfciEID MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO <R VDE UL sen C SA BS ® ® SEM K O DEM KO NEM KO BABT 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t 4N29 4N29A 4N30*


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    PDF 4N29/A, 4N32/A 00flbb23 4N29A, 4N32A, 4n33

    4N29 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by 4N29/D SEMICONDUCTOR TECHNICAL DATA & TO VDE UL ® CSA SE TI SEM KO DEM KO NEMKO BABT G lo b a lO p to iso la to r 6-P in DIP Optoisolators Darlington Output 4N 29 4N 29A 4N 30* [C TR = 100% Min] 4N31 4N 32* T he 4N 29 /A , 4N 30, 4 N 3 1 , 4 N 3 2 1 and 4 N 3 3 (1) d e vice s co n sist o f a gallium


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    PDF 4N29/D 4N29 MOTOROLA

    4N29

    Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.


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    PDF E54915 IEC380/VDE08CI6, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, 30A-02 Y145M, 4N29 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32

    h11g1 case 730c-04

    Abstract: 730D-05 730c-04 MOC3081 H11AV1 C8100 730A-04 H11L1 Case 730A-04 MOC3Q51
    Text: Section 5 Optoisolators/Optocouplers Lead F orm T est O p tio n s .5-3 P ackage D im e n s io n s . 5-4 AC In p u t C o u p le r H11AA1


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    PDF H11AA1 30A-04 730C-04 4N35Series CNY17-1 H11A1 MOC5007 MOC3010 MOC3020 MOC3Q51 h11g1 case 730c-04 730D-05 MOC3081 H11AV1 C8100 730A-04 H11L1 Case 730A-04

    TLP181 equivalent

    Abstract: NEC ps2401 TLP3022 equivalent TLP541G "cross-reference" s13md1 sharp TLP3061 equivalent TLP560J "cross-reference" PC357 "cross-reference" TLP734 equivalent pc716 sharp
    Text: 10. Cross Reference Code Definitions A : D irect R eplacem ent B : M inor Electrical Difference C : M inor M echanical Difference D : M ajo r Electrical Difference E : M ajo r M echanical D ifference F : Call T O S H IB A * G : No Equivalent The fo llo w in g Cross-Reference is m eant to


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    PDF SIEMEN27 PC4N28 PC4N29 PC4N30 PC4N32 PC4N33 PC4N35 PC4N36 PC4N37 PC110 TLP181 equivalent NEC ps2401 TLP3022 equivalent TLP541G "cross-reference" s13md1 sharp TLP3061 equivalent TLP560J "cross-reference" PC357 "cross-reference" TLP734 equivalent pc716 sharp

    H1101

    Abstract: H1102 TIL127 4N29 4N30 4N31 H11B255 H11B3 MCA230 MOC8111
    Text: OPTOELECTRONICS — COUPLERS/ISOLATORS Style 1 : Pin 1. 2. 3. 4. 5. 6. continued CASE 730A-01 Anode Cathode NC Emitter Collector Base Style 3: Pin 1. 2. 3. 4. 5. 6. Anode Cathode NC Emitter Collector NC Transistor Output with No Base Connection — Style 3


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    PDF 30A-01 TIL118 MOC8111 MOC8112 MOC8205 MOC8206 H11D1 H11D2 H11D3 H11D4 H1101 H1102 TIL127 4N29 4N30 4N31 H11B255 H11B3 MCA230

    motorola til111

    Abstract: TIL112 H1101 A4N25A MOC1005 optocoupler MCT2E IC TIL 119 Optocoupler TIL157 H1102 7500
    Text: OPTOELECTRONICS continued Style 1: An optocoupler consists of a gallium arsenide infrared emitting diode, IRED, optically coupled to a monolithic silicon photo­ detector/output device in a light-shielding package. Motorola of­ fers a wide array of standard devices in the popular 6-pin DIP


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    PDF 30A-01 miA204 MOC8205 MOC8206 H11D1 H11D2 H11D3 H11D4 4N38A MCT275 motorola til111 TIL112 H1101 A4N25A MOC1005 optocoupler MCT2E IC TIL 119 Optocoupler TIL157 H1102 7500