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    4N03L06

    Abstract: smd diode 77a IPD50N03S4L-06 PG-TO252-3-11
    Text: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mΩ ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPD50N03S4L-06 PG-TO252-3-11 4N03L06 4N03L06 smd diode 77a IPD50N03S4L-06 PG-TO252-3-11

    4N03L06

    Abstract: IPD50N03S4L-06 PG-TO252-3-11 J2009 smd diode 77a
    Text: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mW ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPD50N03S4L-06 PG-TO252-3-11 4N03L06 4N03L06 IPD50N03S4L-06 PG-TO252-3-11 J2009 smd diode 77a