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    4N* DIODE Search Results

    4N* DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    4N* DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Yamaha YDA

    Abstract: YDA144 qfn20 power POWER AMPLIFIER CIRCUIT DIAGRAM 10000 PD25 QFN20 RB161VA-20 snubber circuit DDP 2000 Po-1230
    Text: YDA144 D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144 D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of


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    YDA144 YDA144 QFN20 Yamaha YDA qfn20 power POWER AMPLIFIER CIRCUIT DIAGRAM 10000 PD25 RB161VA-20 snubber circuit DDP 2000 Po-1230 PDF

    DIGITAL AUDIO POWER AMPLIFIER

    Abstract: No abstract text available
    Text: YDA144 D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144 D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of


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    YDA144 YDA144 levelA144 QFN20 DIGITAL AUDIO POWER AMPLIFIER PDF

    YDA144B

    Abstract: yamaha d85 YDA144B-QZ Yamaha YDA QFN20 RB161VA-20 RB550VA-30 YDA144B-PZ WL-CSP-16 YDA144
    Text: YDA144B D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144B D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144B has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of


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    YDA144B YDA144B QFN20 WLCSP16 yamaha d85 YDA144B-QZ Yamaha YDA RB161VA-20 RB550VA-30 YDA144B-PZ WL-CSP-16 YDA144 PDF

    4N37A

    Abstract: 4n36 PE-50 N364
    Text: YtHLdtPtyJMKtKii] electronic 4N 35 • 4N 36 • 4N 37 Creative Technologies Optically Coupled Isolators C onstruction: Emitter: GaAs IR Emitting Diode Detector: Silicon NPN Epitaxial Planar Phototransistor A pp licatio n s: Galvanically separated circuits, non-interacting switches


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    E-76414 4N37A 4n36 PE-50 N364 PDF

    GE 4N35

    Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •


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    E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, IEC204/VDE0113, VDE0160, VDE0832LSE 30A-02 GE 4N35 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35 PDF

    ac1243

    Abstract: No abstract text available
    Text: Ü b, „ mÊfr '¿iÊk. ''-!r ÿ S - : PHOTOTRANSISTOR OPTOCOUPLERS "•‘•Kr#3" OPTOELECIHOmCS 3 4N25 4N27 4N26 4N28 DESCRIPTION PACKAGE DIMENSIONS t The 4N 25, 4N 26 , 4N 27, and 4N 28 series of optocouplers have an NPN silicon planar phototransistor optically


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    DIMENSIONSC1296A ac1243 PDF

    Motorola 4N35

    Abstract: 4n36 motorola
    Text: MOTOROLA Order this document by 4N35/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL CSA ® SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator 6-P in DIP Optoisolators Transistor Output 4N 35* 4N 36 4N 37 [C T R = 100% Min] T he 4N 35, 4N 36 and 4 N 3 7 d e vice s co n sist o f a ga llium arsenide infrared


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    4N35/D Motorola 4N35 4n36 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Œ coupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically


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    I2-54! C1685 C1296A 74bbfl51 PDF

    p4n40

    Abstract: rfm4n
    Text: m R FM 4N 35/4N 40 R FP4N 35/4N 40 Ha r r is N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Packages Features T0-204AA • 4A, 350V and 400V • r DS on = 2 n • SOA is P o w e r-D issip atio n Lim ited DRAIN SOURCE f (FLANGE) • Nanosecond S w itching Speeds


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    35/4N T0-204AA RFM4N35 RFM4N40 RFP4N35 RFP4N40 p4n40 rfm4n PDF

    a4n25

    Abstract: C1681 C1685 C1682 IC07 C1685 transistor transistor c1684 TRANSISTOR C1685 Control 4N25 4N26
    Text: [ s O PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION ft Æ Æ T h e 4N25, 4N26, 4N 27, and 4N 28 se rie s of op tocouplers have an NPN silicon planar phototransistor optically co u pled to a gallium arsen id e diode.


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    ST1603A c2079 E90700 C1685 C1296A C1294 a4n25 C1681 C1685 C1682 IC07 C1685 transistor transistor c1684 TRANSISTOR C1685 Control 4N25 4N26 PDF

    4N29

    Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.


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    E54915 IEC380/VDE08CI6, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, 30A-02 Y145M, 4N29 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32 PDF

    4N24A

    Abstract: 4N22A 4N23A JANTXV-4N22A
    Text: Product Bulletin 4N22AJAN September 1996 optek Optically Coupled Isolators Types 4N22A , 4N23A , 4N24A , JANTX, JA N TX V -4N 22A , 4N23A , 4N 24A • TX and TXV versions are processed to Ml L-PRF-19500/486 • 1 kV electrical isolation • Base contact is provided for


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    4N22AJAN 4N22A, 4N23A, 4N24A, JANTXV-4N22A, 4N24A L-PRF-19500/486 4N23A 4N24A 4N22A JANTXV-4N22A PDF

    4N60

    Abstract: 4N60S ssp4n50 40 gd 4n mosfet 4n60
    Text: SSP4N 55/4N 60 SSH4N55/4N 60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


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    55/4N SSH4N55/4N O-220 SSP4N55 SSH4N55 SSP4N60 SSH4N60 4N60 4N60S ssp4n50 40 gd 4n mosfet 4n60 PDF

    4N2S

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA «1 <0. <§> ® ® ® VDE UL CSA SETI SEMKO DEMKO NEMKO SABT GlobelOptolsolator 6-Pin DIP Optolsolators Transistor Output 4N 25* 4N25A* 4N 26* 4N27 4N28 [CTR s 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide


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    4N25/A, 4N25A* 4N25A 10mA-- 4N2S PDF

    4N25V

    Abstract: 4N25GV 4N25VS 4N35V tcl tv 21 schematic diagram MARKING 611 OPTOCOUPLER IC AL 03 tcl tv 21" schematic diagram
    Text: Temic S e m i c o n d u c t o r s 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description T he 4N 25V (G )/ 4N 35V (G ) series consists o f a phototransistor optically coupled to a gallium arsenide


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    4N25V 4N35V 4N25Vi 03-Jun-96 001fl33fl 4N25GV 4N25VS tcl tv 21 schematic diagram MARKING 611 OPTOCOUPLER IC AL 03 tcl tv 21" schematic diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: STB4NB80 N - CHANNEL 800V - 3G - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STB 4N B80 S TB 4N B80FP • . . . . 800 V 800 V RDS on 3.3 3.3 a a Id 4 A 4 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    STB4NB80 O-220/TO-220FP B80FP O-262 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5


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    STP4NB50 STP4NB50FP B50FP STP4NB50/FP O-22QFP PDF

    04n25

    Abstract: 4n272
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE Ul cal ® C SA SETI SEMK0 D EM KO BS 4N 25* 4N25A * 4N 26* 4N27 4N28 BABT NEMKO 6-Pin DIP Optoisolators Transistor Output CTR = 20% Min] The 4N25/A, 4 N 2 6 ,4 N 2 7 and 4N28 devices consist of a gallium arsenide infrared


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    4N25/A, 4N25A 30A-04 4N25A, 04n25 4n272 PDF

    4N39T

    Abstract: d4n40
    Text: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES M L L IM E T E R S M IN MAX. M IN 8 38 S' S3 ? 62 PEF The 4N 39 an d 4N 40 co n sist of a g allium arsenide, infrared e m ittin g diode cou p led w ith a lig h t activ ated silico n c o n tro lled 5EiT,ri


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    PDF

    GE 4N35

    Abstract: ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A
    Text: G E SOLID STATE 01 D E | 3 f l 7 5 Q f l l □Ont.74 1 Optoelectronic Specifications 2$ Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — SYtTini Ga As Infrared E m itting Diode & NPN Silicon Photo-D arlington Am plifier T h e G E S o lid S ta te 4N 29 th ru 4N 33 devices co n sist o f a g allium arsen id e


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    4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 4N35-37 GE 4N35 ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A PDF

    TP4n100

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON TYPE S TP 4N 100 S TP 4N 100FI • . . ■ ■ . ■ S T P 4 N 1 oo S T P 4 N 1 OOFI iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS(on) Id 1000 V 1000 V < 3.5 a < 3.5 a 4 A 2.2 A TYPICAL Ros(on) = 3.1 AVALANCHE RUGGED TECHNOLOGY


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    100FI STP4N100 TP4n100 PDF

    MTP4N05L

    Abstract: mtp4n05
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 4N 05L M TP 4N 06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-M ode S ilicon G ate TM O S TM O S POWER FETs LOGIC LEVEL 4 AMPERES These Logic Level TM O S Power FETs are designed fo r high


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    MTP4N05L mtp4n05 PDF

    Opto-isolator

    Abstract: No abstract text available
    Text: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T he 4N 29 th ro u g h 4N 33 d evices c o n sis t o f a g a lliu m a rsen id e infrared e m ittin g dio d e co u p le d w ith a silic o n p h o to -D a rlin g to n am p lifier in a


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    4N29A, 4N32A, E51868 4N29A 0110b 4N29-4N33 Opto-isolator PDF

    Untitled

    Abstract: No abstract text available
    Text: S T P 4 N 100 S T P 4 N 100 FI ¿57 S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP 4N 100 S TP 4N 100FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4 A 2.2 A TYPICAL RDS(on) = 3.1 Q. AVALANCHE RUGGED TECHNOLOGY


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    100FI al100/FI ISQWATT220 PDF