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    4M X 16-BIT X 4 BANKS SYNCHRONOUS DRAM Search Results

    4M X 16-BIT X 4 BANKS SYNCHRONOUS DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB3IN1WHT-000 Amphenol Cables on Demand Amphenol CS-USB3IN1WHT-000 3-in-1 USB 2.0 Universal Apple/Android Charge & Sync Cable Adapter - USB Type A Male In - Apple Lightning (8-Pin) / Apple 30-Pin / USB Micro-B (Android) Male Out - White Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet
    54S163J/B Rochester Electronics LLC 54S163 - Synchronous 4-Bit Counters Visit Rochester Electronics LLC Buy
    74167N Rochester Electronics LLC 74167 - Sync Decade Rate Multipliers Visit Rochester Electronics LLC Buy

    4M X 16-BIT X 4 BANKS SYNCHRONOUS DRAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A43L4616

    Abstract: RA12
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


    Original     		A43L4616 143MHz 133Mhz A43L4616 RA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


    Original     		A43L4616 143MHz PDF

    A43L4616AV

    Abstract: No abstract text available
    Text: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary


    Original     		A43L4616A/A43L5608A A43L4616AV PDF

    A43L4616AV-7F

    Abstract: No abstract text available
    Text: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary


    Original     		A43L4616A/A43L5608A 133MHz 100MHz A43L4616AV-7F PDF

    shz a30

    Abstract: RA12 A43L4616
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date 0.0 Initial issue September, 2004 0.1 Add Pb-Free package type July 28, 2005 Rev. No. July, 2005, Version 0.1 Remark


    Original     		A43L4616 143MHz 133Mhz shz a30 RA12 A43L4616 PDF

    A43L4616AV-75F

    Abstract: A43L4616A RA12
    Text: A43L4616A 4M X 16 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary 0.1 Add Test Mode description August 13, 2008 0.2 Error Correction:


    Original     		A43L4616A 133MHz 100MHz MS-024 A43L4616AV-75F A43L4616A RA12 PDF

    A43L4616A

    Abstract: RA12 4M x 16-Bit x 4 Banks synchronous DRAM
    Text: A43L4616A 4M X 16 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary 0.1 Add Test Mode description August 13, 2008 0.2 Error Correction:


    Original     		A43L4616A 133MHz 100MHz A43L4616A RA12 4M x 16-Bit x 4 Banks synchronous DRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: A43L4616A 4M X 16 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary 0.1 Add Test Mode description August 13, 2008 0.2 Error Correction:


    Original     		A43L4616A 133MHz 100MHz MS-024 PDF

    A43L3616A

    Abstract: No abstract text available
    Text: A43L3616A/A43L4608A 2M x 16 Bit x 4 Banks, 4M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 2M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue August 7, 2007 Preliminary 0.1 Change clock frequency from 133MHz to 143MHz at 7ns cycle


    Original     		A43L3616A/A43L4608A 133MHz 143MHz A43L4608A A43L3616A PDF

    ADS8616A8A

    Abstract: ADS8616A8A-75 ADS8616A8A-75A
    Text: A-Data ADS8616A8A Synchronous DRAM 4M x 16 Bit x 4 Banks General Description Features The ADS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are


    Original     		ADS8616A8A ADS8616A8A 400mil 54pin ADS8616A8A-75 ADS8616A8A-75A PDF

    VDS8616A8A-75

    Abstract: VDS8616A8A-75A VDS8616A8A 400MIL NC451
    Text: V-Data VDS8616A8A Synchronous DRAM 4M x 16 Bit x 4 Banks General Description Features The VDS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are


    Original     		VDS8616A8A VDS8616A8A 400mil 54pin VDS8616A8A-75 VDS8616A8A-75A NC451 PDF

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED4P744LS416-GL 4M X 72 SDRAM SODIMM with ECC based on 4M X 16, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED4P744LS416-GL is a 4M bit X 72 Synchronous Dynamic


    Original     		AVED4P744LS416-GL AVED4P744LS416-GL 400mil 144-pin soc00h PDF

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED4P664LS416-C75 4M X 64 SDRAM DIMM based on 4M X 16 , 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED4P664LS416-C75 is a 4M bit X 64 Synchronous Dynamic RAM high density memory


    Original     		AVED4P664LS416-C75 AVED4P664LS416-C75 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L2561616A 2A Automotive Grade SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION „ „ „ „ The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise cycle


    Original     		M12L2561616A M12L2561616A PDF

    M12L2561616A-5T

    Abstract: No abstract text available
    Text: ESMT M12L2561616A 2S Automotive Grade SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y GENERAL DESCRIPTION The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise


    Original     		M12L2561616A M12L2561616A M12L2561616A-5T PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D2561616A 2F Mobile SDRAM 4M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES           1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		M52D2561616A M52D2561616A-5BG2F M52D2561616A-6BG2F M52D2561616A-7BG2F 200MHz 166MHz 143MHz PDF

    M12L2561616A-7TIG2K

    Abstract: M12L25616 M12L2561616A-6TIG2K
    Text: ESMT M12L2561616A 2K Operation Temperature Condition -40°C~85°C SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation


    Original     		M12L2561616A M12L2561616A-5TIG2K M12L2561616A-5BIG2K M12L2561616A-6TIG2K M12L2561616A-6BIG2K M12L2561616A-7TIG2K M12L2561616A-7BIG2K 200MHz 166MHz M12L25616 PDF

    Mobile SDRAM

    Abstract: No abstract text available
    Text: ESMT M52D2561616A 2F Mobile SDRAM 4M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES           1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		M52D2561616A Mobile SDRAM PDF

    M12L2561616A

    Abstract: No abstract text available
    Text: ESMT M12L2561616A 2S (Preliminary) SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM  FEATURES          JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		M12L2561616A M12L2561616A-5TG2S 200MHz M12L2561616A PDF

    M12L2561616A-6TIG2A

    Abstract: No abstract text available
    Text: ESMT M12L2561616A 2A Operation Temperature Condition -40°C~85°C SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES          ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation


    Original     		M12L2561616A M12L2561616A-5TIG2A M12L2561616A-5BIG2A M12L2561616A-6TIG2A M12L2561616A-6BIG2A M12L2561616A-7TIG2A M12L2561616A-7BIG2A 200MHz 166MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L2561616A 2K SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES „ „ „ „ „ „ „ „ „ ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		M12L2561616A M12L2561616A-5TG2K 200MHz M12L2561616A-5BG2K M12L25ain PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M52D2561616A 2F Mobile SDRAM 4M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES           1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		M52D2561616A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L2561616A 2K Operation Temperature Condition -40 C~85 C SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES „ „ „ „ „ „ „ „ „ ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation


    Original     		M12L2561616A M12L2561616A-5TIG2K 200MHz M12L2561616ain PDF

    M12L2561616A6TG

    Abstract: No abstract text available
    Text: ESMT M12L2561616A 4M x 16 Bit x 4 Banks SDRAM Synchronous DRAM FEATURES y y y y y y y y y ORDERING INFORMATION JEDEC standard 3.3V power supply-+ LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		M12L2561616A M12L2561616A-6TG M12L2561616A-6BG M12L2561616A-7TG M12L2561616A-7BG 166MHz 143MHz M12L2561616A6TG PDF