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    4M X 16 SRAM Search Results

    4M X 16 SRAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    R1LV0408DSP-7LR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1WV3216RBG-7SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0816ASD-5SI#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0408DSP-5SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    BQ2204APN Texas Instruments SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-PDIP 0 to 70 Visit Texas Instruments Buy
    BQ2204ASN Texas Instruments SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-SOIC 0 to 70 Visit Texas Instruments Buy

    4M X 16 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62177EV30LL-55BAXI

    Abstract: CY62177EV30LL-55ZXI CY62177EV30LL
    Text: CY62177EV30 MoBL 32 Mbit 2M x 16 / 4M x 8 Static RAM Features Functional Description • TSOP I Configurable as 2M x 16 or as 4M x 8 SRAM ■ Very High Speed ❐ 55 ns ■ Wide Voltage Range ❐ 2.2V to 3.7V ■ Ultra Low Standby Power ❐ Typical Standby Current: 3 A


    Original     		PDF CY62177EV30 CY62177EV30LL-55BAXI CY62177EV30LL-55ZXI CY62177EV30LL

    CY62177EV30LL

    Abstract: CY62177EV30LL-55ZXI 220v to 3.7v power supply circuit CY62177EV30 CY62177EV30LL55ZXI
    Text: CY62177EV30 MoBL 32 Mbit 2M x 16 / 4M x 8 Static RAM Features Functional Description • TSOP I Configurable as 2M x 16 or as 4M x 8 SRAM ■ Very High Speed ❐ 55 ns ■ Wide Voltage Range ❐ 2.2V to 3.7V ■ Ultra Low Standby Power ❐ Typical Standby Current: 3 A


    Original     		PDF CY62177EV30 48-Ball CY62177EV30LL CY62177EV30LL-55ZXI 220v to 3.7v power supply circuit CY62177EV30LL55ZXI

    TMS320C6000

    Abstract: TMS320C6201 TMS320C6701 WED9LC6416V
    Text: WED9LC6416V White Electronic Designs 128Kx32 SSRAM/4Mx32 SDRAM EXTERNAL MEMORY SOLUTION FOR TEXAS INSTRUMENTS TMS320C6000 DSP FEATURES DESCRIPTION n The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous Pipeline SRAM and a 4M x 32 Synchronous DRAM array constructed with one 128K x 32 SSRAM and two 4M x 16


    Original     		PDF WED9LC6416V 128Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6416VxxBC TMS320C6201 TMS320C6701 TMS320C6201 TMS320C6701 WED9LC6416V

    SDRAM

    Abstract: 128Mx8 DDR dRAM 512M 8M X 16 SDRAM 8M X 16 X 4 SDRAM SDRAM 128M 8M x 16 512M ISSD16M16STC TSOP SDRAM ISAS512K16LTD
    Text: MPD Parts Directory March 2002 Stack Technology Stack Memory Configuration Stack Part Number TSOP Memory Configuration SRAM (8M) 512K x 16 ISAS512K16LTD (4M) 256K x 16 EDO DRAM (128M) 16M x 8 ISED16M8LTB (64M) 16M x 4 SDRAM SDRAM SDRAM SDRAM SDRAM (512M)


    Original     		PDF ISAS512K16LTD ISED16M8LTB ISSD128M4STB ISSD64M8STB ISSD64M8STC ISSD32M16STC ISSD32M16STD ISSD64M4STB ISSD32M8STB ISSD32M8STC SDRAM 128Mx8 DDR dRAM 512M 8M X 16 SDRAM 8M X 16 X 4 SDRAM SDRAM 128M 8M x 16 512M ISSD16M16STC TSOP SDRAM ISAS512K16LTD

    MB82DBS04163C

    Abstract: MB82DBS04163C-70L
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E MEMORY Mobile FCRAMTM CMOS 64M Bit 4M word x 16 bit Mobile Phone Application Specific Memory MB82DBS04163C-70L CMOS 4,194,304-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface Programmable Page Mode & Burst Mode


    Original     		PDF MB82DBS04163C-70L 304-WORD MB82DBS04163C 16-bit MB82DBS04163C-70L

    transistor marking A19

    Abstract: HMS4M16M16G
    Text: HANBit HMS4M16M16G HAN SRAM MODULE 8Mbyte 4M x 16-Bit BIT Part No. HMS4M16M16G GENERAL DESCRIPTION The HMS4M16M16G is a high-speed static random access memory (SRAM) module containing 2,097,152 words organized in 4M x16-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72pin, double-sided, FR4-printed circuit board.


    Original     		PDF HMS4M16M16G 16-Bit) HMS4M16M16G x16-bit 72pin, X16bit 16bit transistor marking A19

    TLA064

    Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


    Original     		PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129Jxx TLA064 S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0

    Untitled

    Abstract: No abstract text available
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


    Original     		PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129Jxx

    MCP78

    Abstract: Spansion s29pl127j S29PL129J S71PL129JA0 S71PL129JB0 S71PL129JC0 FBGA 9 x 12 package tray PL127J
    Text: S71PL129JC0/S71PL129JB0/ S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE Distinctive Characteristics


    Original     		PDF S71PL129JC0/S71PL129JB0/ S71PL129JA0 16-bit) S71PL129J S29PL129J S71PL129Jxx MCP78 Spansion s29pl127j S71PL129JA0 S71PL129JB0 S71PL129JC0 FBGA 9 x 12 package tray PL127J

    Untitled

    Abstract: No abstract text available
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


    Original     		PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129Jxx 29this

    S29PL129J

    Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


    Original     		PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129J S29PL129J S71PL129Jxx S71PL129JA0 S71PL129JB0 S71PL129JC0

    Untitled

    Abstract: No abstract text available
    Text: S71PL129JC0/S71PL129JB0/ S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE Distinctive Characteristics


    Original     		PDF S71PL129JC0/S71PL129JB0/ S71PL129JA0 16-bit) S71PL129J S29PL129J S71PL129Jxx

    Untitled

    Abstract: No abstract text available
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


    Original     		PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129J S29PL129J S71PL129Jxx

    71WS512ND

    Abstract: No abstract text available
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512N/256N 71WS512ND

    PL127J

    Abstract: Pl064j PL032J S71PL064JA0BAW0B S71PL064JA0 S71PL064JA0BAW07 S71PL064JA0BFW07 S71PL064JA0BFW0B mcp79
    Text: S71PL064JA0 Stacked Multi-Chip MCP Flash Memory and pSRAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 16 Megabit (1M x 16-bit) CMOS Pseudo Static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS MCP Features „ Cycling endurance: 1 million cycles per sector


    Original     		PDF S71PL064JA0 16-bit) Am29F Am29LV 56-Ball S71PL064JA0 PL127J Pl064j PL032J S71PL064JA0BAW0B S71PL064JA0BAW07 S71PL064JA0BFW07 S71PL064JA0BFW0B mcp79

    PWA with 555

    Abstract: S71PL064JA0BAW0B Spansion s29pl127j PL032J S71PL064JA0 S71PL064JA0BAW07 S71PL064JA0BFW07
    Text: S71PL064JA0 Stacked Multi-Chip MCP Flash Memory and pSRAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 16 Megabit (1M x 16-bit) CMOS Pseudo Static RAM ADVANCE DISTINCTIVE CHARACTERISTICS MCP Features „ Cycling endurance: 1 million cycles per sector


    Original     		PDF S71PL064JA0 16-bit) Am29F Am29LV 56-Ball S71PL064JA0 PWA with 555 S71PL064JA0BAW0B Spansion s29pl127j PL032J S71PL064JA0BAW07 S71PL064JA0BFW07

    Untitled

    Abstract: No abstract text available
    Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static


    Original     		PDF S71PL254/127/064/032J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K S71PL

    S29PL127J

    Abstract: S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 MCP51
    Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static


    Original     		PDF S71PL254/127/064/032J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K S71PL S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 MCP51

    fBGA package tray

    Abstract: 63 ball fbga thermal resistance spansion 7149A S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 6129A MCP51
    Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static


    Original     		PDF S71PL254/127/064/032J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K S71PL fBGA package tray 63 ball fbga thermal resistance spansion 7149A S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 6129A MCP51

    Untitled

    Abstract: No abstract text available
    Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features


    Original     		PDF EN71NS128C0 EN71NS128C0 16-bit) 108MHz) EN71NS E29NS128 ENPSS64

    S71WS512ND0BFWEP

    Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 S71WS512ND0BFWEP LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND

    EN29NS128

    Abstract: E29NS128 PSEUDO SRAM EN71NS PSRAM
    Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features


    Original     		PDF EN71NS128C0 EN71NS128C0 16-bit) 108MHz) EN71NS E29NS128 ENPSS64 EN29NS128 E29NS128 PSEUDO SRAM PSRAM

    MCP 90

    Abstract: bfw 10 transistor transistor marking A21 S71PL064 bfw resistor S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80
    Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and SRAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/ 32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM


    Original     		PDF S71PL254/127/064/032J 16-bit) 4M/2M/1M/512K/256K S71PL MCP 90 bfw 10 transistor transistor marking A21 S71PL064 bfw resistor S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80

    bga 6x8

    Abstract: bga 6x8 Package A64E06161 A64E06161G
    Text: A64E06161 1M X 16 Bit Low Voltage Super RAMTM Preliminary Features n Common I/O using three-state output n Support 3 distinct operation modes for reducing standby power : Reduced Memory Size Operation 4M,8M,12M,16M Partial Array Refresh (4M,8M,12M) Deep Power Down Mode


    Original     		PDF A64E06161 48-ball A64E06161 I/O10 I/O11 I/O12 I/O14 I/O13 I/O15 A64E06161G bga 6x8 bga 6x8 Package A64E06161G