Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4M SDRAM Search Results

    4M SDRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSPT857CNLG Renesas Electronics Corporation 2.5V - 2.6V PLL Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DPAG Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877DBVG Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DBVG8 Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877ANLG8 Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation

    4M SDRAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HYS64V4120GU-10

    Abstract: HYS72V4120GU-10
    Text: 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V4120GU-10 HYS72V4120GU-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 2 bank 4M x 64, 4M x 72 organisation


    Original     		64-Bit 72-Bit HYS64V4120GU-10 HYS72V4120GU-10 L-DIM-168-25 HYS64 V4120GU-10 DM168-25 HYS64V4120GU-10 HYS72V4120GU-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V4120G C U-10 HYS72V4120G(C)U-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 2 bank 4M x 64, 4M x 72 organisation


    Original     		64-Bit 72-Bit HYS64V4120G HYS72V4120G DM168-25 HYS64 V4120G L-DIM-168-C2 V4120GCU-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED4P744LS416-GL 4M X 72 SDRAM SODIMM with ECC based on 4M X 16, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED4P744LS416-GL is a 4M bit X 72 Synchronous Dynamic


    Original     		AVED4P744LS416-GL AVED4P744LS416-GL 400mil 144-pin soc00h PDF

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED4P664LS416-C75 4M X 64 SDRAM DIMM based on 4M X 16 , 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED4P664LS416-C75 is a 4M bit X 64 Synchronous Dynamic RAM high density memory


    Original     		AVED4P664LS416-C75 AVED4P664LS416-C75 144-pin PDF

    WED3DG644V-D2

    Abstract: No abstract text available
    Text: WED3DG644V-D2 32MB- 4M x 64 SDRAM UNBUFFERED FEATURES DESCRIPTION n PC100 and PC133 compatible The WED3DG644V is a 4M x 64 synchronous DRAM module which consists of four 4M x 16 SDRAM components in TSOP- 11 package and one 2K EEPROM in an 8- pin TSSOP package for


    Original     		WED3DG644V-D2 PC100 PC133 WED3DG644V WED3DG644V10D2 WED3DG644V7D2 WED3DG644V75D2 100MHz 133MHz WED3DG644V-D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: VIS Preliminary VS464641641B,VS864641641B 4M,8MX64-Bit SDRAM Module Description The VS464648041B and VS864648041B are 4M x 64 bit and 8M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 4/8 CMOS 4M x 16 bit synchronous DRAMs (VG36641641BT) with 4


    Original     		VS464641641B VS864641641B 8MX64-Bit VS464648041B VS864648041B VG36641641BT) VS4646441641A, VS8646441641A PC100 VS464641641B) PDF

    e24526

    Abstract: IBM0316169C IBM0316809C
    Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM


    Original     		IBM0316409C IBM0316169C IBM0316809C IBM13Q4739CC 200-Pin e24526 PDF

    Untitled

    Abstract: No abstract text available
    Text: WED3DG644V-D2 32MB- 4M x 64 SDRAM UNBUFFERED FEATURES DESCRIPTION n Burst Mode Operation The WED3DG644V is a 4M x 64 synchronous DRAM module which consists of four 4M x 16 SDRAM components in TSOP- 11 package and one 2K EEPROM in an 8- pin TSSOP package for


    Original     		WED3DG644V-D2 WED3DG644V WED3DG644V10D2 WED3DG644V7D2 WED3DG644V75D2 100MHz 133MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED4P664LS416-GH 4M X 64 SDRAM DIMM based on 4M X 16 , 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED4P664LS416-XX is a 4M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AVED4P664LS416-XX


    Original     		AVED4P664LS416-GH AVED4P664LS416-XX AVED4P664LS416-XX 144-pin PDF

    tsop44 footprint

    Abstract: PC100-168 PC100-222-620 TSOP44 TSOP44 Package layout
    Text: 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V2200GU-8 HYS64/72V4220GU-8 PC100-168 pin unbuffered DIMM Modules Advanced Information • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules • 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation


    Original     		64/72-Bit HYS64/72V2200GU-8 HYS64/72V4220GU-8 PC100-168 PC100-compatible PC100 HYS64 V2200/4220GU-8 L-DIM-168-29 tsop44 footprint PC100-222-620 TSOP44 TSOP44 Package layout PDF

    A43L4616

    Abstract: RA12
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


    Original     		A43L4616 143MHz 133Mhz A43L4616 RA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


    Original     		A43L4616 143MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V43644R04V C TG-10PC 3.3 VOLT 4M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE MOSEL VITELIC Features Description • 168 Pin Unbuffered 4,194,304 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 4M x 16 SDRAM in TSOPII-54 Packages


    Original     		V43644R04V TG-10PC PC100 TSOPII-54 PDF

    WEDPN16M64VR-XBX

    Abstract: WEDPN16M64V-XBX WEDPN16M72VR-XBX WEDPN16M72V-XBX WEDPN4M64V-XBX WEDPN4M72V-XBX WEDPN8M64VR-XBX WEDPN8M64V-XBX WEDPN8M72VR-XBX WEDPN8M72V-XBX
    Text: SDRAM BGA’s Optimum Density and Performance in One Package Designed to complement the PowerPC and other high performance memory controllers. Organization Part Number Package PBGA Dimensions 4M x 64 WEDPN4M64V-XBX 219 PBGA 21mm x 21mm 4M x 72 WEDPN4M72V-XBX


    Original     		WEDPN4M64V-XBX WEDPN4M72V-XBX WEDPN8M64V-XBX WEDPN8M72V-XBX WEDPN8M64Vnd x64/x72 MIF2023 WEDPN16M64VR-XBX WEDPN16M64V-XBX WEDPN16M72VR-XBX WEDPN16M72V-XBX WEDPN4M64V-XBX WEDPN4M72V-XBX WEDPN8M64VR-XBX WEDPN8M64V-XBX WEDPN8M72VR-XBX WEDPN8M72V-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYS64V4000GU HYS72V4000GU 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation


    OCR Scan     		HYS64V4000GU HYS72V4000GU 64-Bit 72-Bit SPT02921 fl23SbG5 GD65b7b PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module HYS64V4000GU HYS72V4000GU 168 pin unbuffered DIMM Modules Prelim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation


    OCR Scan     		64-Bit 72-Bit HYS64V4000GU HYS72V4000GU HYS64 V4000GU DM168-17 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module HYS64V4000GU HYS72V4000GU 168 pin unbuffered DIMM Modules P relim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation


    OCR Scan     		64-Bit 72-Bit HYS64V4000GU HYS72V4000GU L-DIM-168-17 HYS64 V4000G PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V40 1 20GU HYS72V40(1)20GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 2 bank 4M x 64, 4M x 72 organisation


    OCR Scan     		64-Bit 72-Bit HYS64V40 HYS72V40 Sequen14 HYS64 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V4120GU-10 HYS72V4120GU-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 2 bank 4M x 64, 4M x 72 organisation


    OCR Scan     		64-Bit 72-Bit HYS64V4120GU-10 HYS72V4120GU-10 HYS64 V4120GU-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYS64V40 1 20GU HYS72V40(1 )20GU 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 2 bank 4M x 64, 4M x 72 organisation


    OCR Scan     		64-Bit 72-Bit HYS64V40 HYS72V40 HYS64 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS 64V4120GU-10 HYS 72V4120GU-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 2 bank 4M x 64, 4M x 72 organization


    OCR Scan     		64-Bit 72-Bit 64V4120GU-10 72V4120GU-10 fl235b05 V4120GU 15333A PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V4120GU-10 HYS72V4120GU-10 168 pin unbuffered DIMM Modules * 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module for PC main memory applications * 2 bank 4M x 64, 4M x 72 organisation


    OCR Scan     		64-Bit 72-Bit HYS64V4120GU-10 HYS72V4120GU-10 L-DIM-168-25 HYS64 V4120GU-10 68-2S PDF

    HYB39S16400T

    Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
    Text: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL


    OCR Scan     		256kX 314100BJ/BJL 314400BJ/BJL HYB314405BJ/BJL 314171BJ/BJL 314175BJ/BJL 514100BJ/BJL 514400BJ/BJL 514405BJ/BJL 314265BJ/BJL HYB39S16400T hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM PDF

    CDC2509

    Abstract: No abstract text available
    Text: Preliminary KMM378S400CT SDRAM MODULE KMM378S400CT SDRAM DIMM 4M x72 SDRAM DIMM with PLL & R egister based on 4M x4, 4K Ref. 3.3V S ynchronous DRAM s FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM378S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM378S400CT KMM378S400CT 400mil 24-pin 200-pin 200pin CDC2509 PDF