HF8-28S
Abstract: ASI10736
Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B
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HF8-28S
HF8-28S
112x45°
ASI10736
ASI10736
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transistor TPV375
Abstract: TPV375 TPV-375
Text: TPV375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV375 is a Common Emitter Device Designed for Class A Television Band III Applications. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 8A
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TPV375
TPV375
ASI10760
transistor TPV375
TPV-375
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SUTV040
Abstract: M122 SD4011
Text: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE POUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE
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SD4011
SUTV040
SD4011
SUTV040
M122
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arco TRIMMER capacitor
Abstract: arco 404 arco TRIMMER capacitor 425 arco 403 CPM13B capacitor 100uF 63V 3 pins trimmer capacitor TRIMMER capacitor 0.5 pF to 80pf TRIMMER capacitor 3 pin TRIMMER capacitor
Text: SD1459 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . 170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS P OUT = 20 W MIN. WITH 7.5 dB GAIN .500 Dia .550 4L STUD M164
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SD1459
SD1459
arco TRIMMER capacitor
arco 404
arco TRIMMER capacitor 425
arco 403
CPM13B
capacitor 100uF 63V
3 pins trimmer capacitor
TRIMMER capacitor 0.5 pF to 80pf
TRIMMER capacitor
3 pin TRIMMER capacitor
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Untitled
Abstract: No abstract text available
Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B
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HF8-28S
HF8-28S
112x45Â
ASI10601
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150WpEP
Abstract: THX15C
Text: THX15C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI THX15C is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS
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THX15C
THX15C
150WpEP
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SUTV040
Abstract: airtronic M122 SD4011
Text: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P OUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE
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SD4011
SUTV040
SD4011
SUTV040
airtronic
M122
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M122
Abstract: SD1449 TCC597
Text: SD1449 TCC597 RF & MICROWAVE TRANSISTORS UHF TV\LINEAR APPLICATIONS . . . 860 MHz 20 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 1.0 W MIN. WITH 10.0 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD1449 BRANDING TCC597
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SD1449
TCC597)
TCC597
SD1449
M122
TCC597
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MSC80185
Abstract: MSC80186 S027
Text: MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P OUT = 30.0 dBm MIN. .230 4L STUD S027
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MSC80186
MSC80185
MSC80186
S027
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SD1727
Abstract: No abstract text available
Text: SD1727 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1727 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS
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SD1727
SD1727
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THX15
Abstract: No abstract text available
Text: THX15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI THX15 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC
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THX15
THX15
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TCC593
Abstract: M122 SD1437
Text: SD1437 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . 860 MHz COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 2 W MIN. WITH 8.5 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CO DE SD1437 BRANDING TCC593 PIN CONNECTION DESCRIPTION
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SD1437
TCC593
SD1437
TCC593
M122
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VLB40-12S
Abstract: vhf fm amplifier ASI10735 TRansistor A 940
Text: VLB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB40-12S is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD A .112x45° FEATURES:
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VLB40-12S
VLB40-12S
112x45°
ASI10735
vhf fm amplifier
ASI10735
TRansistor A 940
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SD1169
Abstract: No abstract text available
Text: SD1169 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Aluminum Metalization • Emitter Ballasting
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SD1169
SD1169
100mA
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HF30-28S
Abstract: ASI10605 HF30-28F
Text: HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L STUD
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HF30-28S
HF30-28S
112x45°
HF30-28F
ASI10605
HF30-28F
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ULBM5
Abstract: ASI10680
Text: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD
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3733
Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090
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TQ-60
T0-60
15BAL
28/2x100
450SQ4LFL
3733
imo 3
sd1090
2n5635
4l stud
SD 1470
TQ-60
2N5016
2N5090
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power amplifier IC 4440
Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min
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TQ-60
T0-60
BSX33
2N956
power amplifier IC 4440
BFR99
t 3866 transistor
BFR99A
CE-28
bf 225
vhf/SRF 3733
t 3866 power transistor
tic 1060
BFR38
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CB410
Abstract: stu 407 2804lSL CB-50 CB303 1090 TACAN CB-303 CB-408 SD1543-2
Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications DME/IFF/TACAN puisées, classe C TYPE PAC K AG E CONFIG. Vcc V SD 1528 .280 4L STUD (A) SD 1528-1 .280 4LSL (A) SD 1528-8 .250 2LFL HERM SD 1530 .280 4L STUD (A) SD 1530-1 .280 4LSL (A)
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52LFL
CB410
stu 407
2804lSL
CB-50
CB303
1090
TACAN
CB-303
CB-408
SD1543-2
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2n6080
Abstract: SD 1062 transistor 2N3924 sd 3632
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V
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XO-72
O-117SL
O-117SL
2N6080
T0-60
SD 1062 transistor
2N3924
sd 3632
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6lfl
Abstract: sd 1144 2N6080 7-02N sd1410 2N5643
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V
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XO-72
O-117SL
O-117SL
2N6080
6lfl
sd 1144
7-02N
sd1410
2N5643
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M104
Abstract: M135 XO-72 SD1072
Text: SELECTION GUIDE TO 39 M l 34} 3jp ¥ 500 6LFL ( M iti 380 4LFL (M l 13* 381) 4L STUD (M135) m u TO 60 (M137J 380 NARROW 4L STUD (M104) .280 /1LSL (M123> st (M l 07) 130 . 230 MHz CLASS FOR FM MOBILE APPLICATIONS Type Config. VCC (V) .280 4LSL XO-72 SL
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IM113|
IMI23)
XO-72
T0-60
M104
M135
SD1072
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BFR38
Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022
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XO-72
O-117SL
O-117SL
2N6080
BSX33
2N956
BFR38
BFR99
BFX89
9552N
TO-117SL
pnp 2222a
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Untitled
Abstract: No abstract text available
Text: rz T SCS-THOMSON SD1439 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS > 860 MHz > COMMON EMITTER . GOLD METALLIZATION . CLASS A LINEAR OPERATION . Pout = 0.5 W MIN. WITH 9.5 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE BRANDING SD1439 TCC596
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SD1439
TCC596
SD1439
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