Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4KA IGBT Search Results

    4KA IGBT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    4KA IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GTO thyristor 4500V 4000A

    Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
    Text: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA


    Original     		PDF 500V/1500A FD1500BV-90DA 500V/500A FD500JV-90DA GTO thyristor 4500V 4000A FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit

    IRGC25B120KB

    Abstract: 1kA IGBT
    Text: PD - 93868 IRGC25B120KB Die in Wafer Form Features • • • • • 1200V IC nom =25A VCE(on) typ.=2.28V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC25B120KB 150mm Thresh57] IRGC25B120KB 1kA IGBT

    IRGC100B120KB

    Abstract: 4kA IGBT
    Text: PD - 93874 IRGC100B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 2.2V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC100B120KB 150mm IRGC100B120KB 4kA IGBT

    IRGC25B120UB

    Abstract: 1kA IGBT IGBT Transistor 1200V, 25A induction welding
    Text: PD - 93867 IRGC25B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =25A VCE(on) typ.=3.37V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability


    Original     		PDF IRGC25B120UB 150mm 20KHz IRGC25B120UB 1kA IGBT IGBT Transistor 1200V, 25A induction welding

    IRGPS60B120KD

    Abstract: IRGC49B120KB
    Text: PD - 94353 IRGC49B120KB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=2.33V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC49B120KB 150mm IRGPS60B120KD Saturatio47 IRGPS60B120KD IRGC49B120KB

    SK 5207

    Abstract: No abstract text available
    Text: PD - 94562 IRGC16B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.55V@ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC16B120KB 150mm GB15RF120K SK 5207

    IRGC100B120UB

    Abstract: 1kA IGBT
    Text: PD - 93873 IRGC100B120UB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC100B120UB 150mm IRGC100B120UB 1kA IGBT

    IRGC20B60KB

    Abstract: No abstract text available
    Text: PD - 94375 IRGC20B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 20A VCE(on) typ.=1.82V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC20B60KB 150mm IRGC20B60KB

    1kA IGBT

    Abstract: IRGC30B60KB
    Text: PD - 94376 IRGC30B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 30A VCE(on) typ.=1.95V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC30B60KB 150mm 1kA IGBT IRGC30B60KB

    IRGC50B120UB

    Abstract: No abstract text available
    Text: PD - 93869 IRGC50B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =50A VCE(on) typ.=3.15V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µs Short Circuit Capability


    Original     		PDF IRGC50B120UB 150mm 20KHz IRGC50B120UB

    IRGC50B120KB

    Abstract: No abstract text available
    Text: PD - 93870 IRGC50B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 50A VCE(on) typ.=2.15V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC50B120KB 150mm IRGC50B120KB

    IRGC75B120KB

    Abstract: 0443 IC HA-1370S
    Text: PD - 93872 IRGC75B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 75A VCE(on) typ.= 2.1 V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC75B120KB 150mm IRGC75B120KB 0443 IC HA-1370S

    Untitled

    Abstract: No abstract text available
    Text: PD - 94560 IRGC8B60KB Die in Wafer Form Features 600V IC nom = 8.0A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C • • • • • GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA


    Original     		PDF IRGC8B60KB 150mm IRGB8B60K

    1kA IGBT

    Abstract: IRGC15B120KB
    Text: PD - 93866 IRGC15B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.46V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low V CE(on) 10µ s Short Circuit Capability


    Original     		PDF IRGC15B120KB 150mm 1kA IGBT IRGC15B120KB

    IRGC75B120UB

    Abstract: No abstract text available
    Text: PD - 93871 IRGC75B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =75A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability


    Original     		PDF IRGC75B120UB 150mm 20KHz IRGC75B120UB

    IRGC50B60KB

    Abstract: 4kA IGBT
    Text: PD - 94377 IRGC50B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom =50A VCE(on) typ.=2.0V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC50B60KB 150mm IRGC50B60KB 4kA IGBT

    IRGC10B60KB

    Abstract: IRGS10B60KD
    Text: PD - 94409 IRGC10B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 10A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC10B60KB 150mm IRGS10B60KD IRGC10B60KB IRGS10B60KD

    IRGC5B60KB

    Abstract: No abstract text available
    Text: PD - 94408 IRGC5B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 5A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC5B60KB 150mm IRGS5B60KD IRGC5B60KB

    IRGC49B120UB

    Abstract: IRGPS40B120UD
    Text: PD - 94352 IRGC49B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=3.39V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC49B120UB 150mm 20KHz IRGPS40B120UD IRGC49B120UB IRGPS40B120UD

    FF 150 R 1200 kf igbt

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    IGBT FZ 1600 r12 kf4

    Abstract: FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be


    Original     		PDF A15/97 FZ800R12KF4 IGBT FZ 1600 r12 kf4 FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12

    FZ800R12KF4

    Abstract: IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be


    Original     		PDF A15/97 FZ800R12KF4 FZ800R12KF4 IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200

    IC1500

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    FZ800R12KF4

    Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be


    Original     		PDF A15/97 FZ800R12KF4 800A DC diode IGBT FZ 1600 r12 kf4 fZ80