Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE V • 4fl5S452 001710b 7T7 P D -2.305 International S Rectifier 31 d q o s 31DQO6 SCHOTTKY RECTIFIER 3.3 Amp Major Rating« and Characteristics Description/Features Characteristics 31 DQ. Units lF AV Rectangular waveform 3.3 A
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4fl5S452
001710b
DD1710T
31DQ05
31DQ06
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IRF120
Abstract: IRF122
Text: HE D I Data Sheet No. PD-9.312H 40 55452 □001 04 2 2 | T - 3 f - n INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IR F 1 2 0 IR F 1 2 1
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T0-204AA
IRF120,
IRF121,
IRF122,
IRF123
IRF120
IRF122
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transistor c246
Abstract: transistor c245 c245 transistor
Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
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IRGBF30F
10kHz)
O-220AB
C-247
46S5455
TQ-220AB
C-248
transistor c246
transistor c245
c245 transistor
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Untitled
Abstract: No abstract text available
Text: Bulletin 12083/B International SR ectifier SD300C.C s e r ie s STANDARD RECOVERY DIODES Hockey Puk Version 650A Features • Wide current range ■ High voltage ratings up to 3200V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version
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12083/B
SD300C.
DQ-200AA
0100S
4A55452
D-112
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • 4S554S2 DD17DSÖ 114 PD-2.302 International 1?örJRectifier 3o w q o 5f 3o w q o 6 f SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Description/Features Characteristics 30WQ.F Units ' f AV R«K*»nflular waveform
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4S554S2
DD17DSÃ
-40to125
TJ-25Â
5545S
GQ17Qbl
30WQ05F
30WQ06F
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.888 I3 R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.300, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and
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IRHM913Q
1x105
1x105
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD-9.1000 International j»g Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer
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IRF744
O-220
D-6380
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C802
Abstract: lta 803 C115A DIODE 804 DIODE c802
Text: International »^Rectifier PD-9.971 IRGNI115U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT Vce = 600V .R u g g e d D esign •Simple gate-drive .Ultra-fast operation up to 2 5 K H z hard switching, or 1 0 0 K H z resonant .Sw itchin g-Loss Rating includes all "tail“
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IRGNI115U06
C-806
C802
lta 803
C115A
DIODE 804
DIODE c802
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PDF
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Q405
Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e
Text: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate
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Q01QS11
O-220AB
Q405
vqe 24 d
q405 transistor
vqe 23
IRGBC26
TO220AB IGBT
t303
3i03
a y8e
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PDF
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Untitled
Abstract: No abstract text available
Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4BC30S
O-22QAB
S54S2
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transistor c929
Abstract: transistor C935 c929 c933 C931 transistor C933
Text: PD-9.1109A International Hör]Rectifier IRGPC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @125°C, VGE= 15V Switching-loss rating includes all "tail" losses
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IRGPC20KD2
C-935
O-247AC
C-936
002072b
transistor c929
transistor C935
c929
c933
C931
transistor C933
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vida my
Abstract: S52KF d1dt 102s10 5A/1/S52KF
Text: INTERNATIONAL IO R RECTIFIER in t e r n a t io n a l 73 DE|4â55452 ODDTOT? fc. | Data Sheet No. PD-3.175 RECTIFIER S52KF SERIES 2000-1800 VOLTS RANGE STANDARD TURN-OFF TIME 60 / j s 1500 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs VOLTAGE RATINGS
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0S5455
S52KF
S52KF
S52KF20B.
0GD71DE
vida my
d1dt
102s10
5A/1/S52KF
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER IO R 73 D E | 4 â 5 5 4 5 5 ODDTOT? fc. | T-2-5-2.Ö Data Sheet No. PD-3.175 in t e r n a t io n a l r e c t if ie r S52KF SERIES 2000-1800 VOLTS RANGE STANDARD TURN-OFF TIME 60 / j s 1500 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs
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S52KF
S52KF
S52KF20B.
55M55
DDD71D2
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin 12072/C International [î r ]Rectifier s d h ooc.c s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1400A • W ide current range ■ High voltage ratings up to 3 2 0 0 V ■ High surge current capabilities ■ Diffused junction ■
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12072/C
SD1100C.
19-Thermal
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ma 8920
Abstract: 750PEF10 750PEF40 NI-11
Text: INTERNATIONAL RECTIFIER / qcc / ct 4855452 INTERNATIONAL RECTIFIER in D e | 4ASS452 000473M b Data Sheet No. PD-3.065 49C 04734 D INTERNATIONAL RECTIFIER I R 1180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description Th e 7 5 0 P E F series o f fast tu r n -o ff thyristors use centre
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4i3SS455
750PEF
233KansasSl
CA90245
II60067.
ma 8920
750PEF10
750PEF40
NI-11
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