Untitled
Abstract: No abstract text available
Text: 4fiSS452 001522b bOl • INR International g j i Rectifier HEXFET Power MOSFET • • • • • • • PD-9.841 IR F I 9Z 24 G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature
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4fiSS452
001522b
O-220
IRFI9Z24G
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IR6000
Abstract: IR-6000
Text: Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR6000 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmft Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and
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IR6000
IR6000
goes31,
D-6380
005136b
IR-6000
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RD202
Abstract: No abstract text available
Text: International ! - R Rectifier HEXFET Power MOSFET • • • • • INR MÛ554S2 QGlSlbQ PD-9.651A IRFI740G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance
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554S2
IRFI740G
O-220
4fiSS452
RD202
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irfu9210
Abstract: irfu9212 DIODE C93 C92 diode IRFR9210 IRFR9212
Text: h e o | x a s s ts a o o o h h o s | Data ^ INTERNATIONAL R E C T I F I E R Nq pD. 9 H 1 B T-37-25 INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS210 IRFRS21S IRFUS210 IRFU0212 P-CHANNEL -200 Volt, 3.0 Ohm HEXFET
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55MSS
T-37-25
IRFR9210,
IRFR9212,
IRFU9210,
IRFU9212
aGGfl347
IRFR9210TR
10637T
irfu9210
DIODE C93
C92 diode
IRFR9210
IRFR9212
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Untitled
Abstract: No abstract text available
Text: International P D - 9.1031 ¡ragRectifier IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Sw itching-loss rating includes all "tail" lo sses • Optimized for high operating frequency over 5kHz S e e Fig. 1 for Current vs. Frequency curve
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IRGPC20U
O-247AC
00504b4
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1RF9640
Abstract: IRF9640
Text: International |g»i Rectifier HEXFET P o w e r M O S F E T • • • • • • • 4855455 0Ql4 2 t37 - 1NR PD9422B IRF9640 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements
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IRF9640
-200V
1RF9640
IRF9640
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D304 diode
Abstract: tr/P45/D304 diode
Text: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility
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SSM52
QQlb771
46S5452
10ohms.
D304 diode
tr/P45/D304 diode
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Untitled
Abstract: No abstract text available
Text: I«R INTERNATIONAL RECTIFIER 4Ô55452 DOlOftlS S 5bE D •T-o 1-913 145 R52K SERIES 4200-3600 VOLTS RANGE 1460 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES RATINGS VOLTAGE i S PART i NUHSER > j I 1 1 1 : ! 1 i 1 : : RS3C42A i i 4200 1 RS2K40A : 4000
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T-o19
RS3C42A
RS2K40A
R53C368
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Untitled
Abstract: No abstract text available
Text: International IC R Rectifier PD 9.1464A IRG4PC40FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4PC40FD
O-247AC
554S2
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Untitled
Abstract: No abstract text available
Text: P D -9 .1 2 2 8 International jgg] Rectifier_ H EXFET P ow er M O S FE T • • • • • • • IRFDC20 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements
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IRFDC20
61350BadHomburgTel:
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