Untitled
Abstract: No abstract text available
Text: UM142XX 300mA, Low Consumption, Wide Input Voltage Linear Regulator UM142XXS SOT23-3 UM142XXY SOT89-3 UM142XXB SOT89-3 General Description The UM142XX series are a group of positive voltage output, high precise, high PSRR and low power consumption voltage regulator. The output voltages are selectable in 100mV steps within a
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UM142XX
300mA,
UM142XXS
OT23-3
UM142XXY
OT89-3
UM142XXB
UM142XX
100mV
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2D2 SMD
Abstract: Transistor SMD 3d0 74LVCH32374A 74LVCH32374AEC SMD 3d0
Text: INTEGRATED CIRCUITS DATA SHEET 74LVCH32374A 32-bit edge-triggered D-type flip-flop with 5 V tolerant inputs/outputs; 3-state Product specification File under Integrated Circuits, IC24 1999 Nov 24 Philips Semiconductors Product specification 32-bit edge-triggered D-type flip-flop with
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74LVCH32374A
32-bit
74LVCH32374A
245004/01/pp16
2D2 SMD
Transistor SMD 3d0
74LVCH32374AEC
SMD 3d0
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BC860
Abstract: BC859B 215 BC859A BC860C BC849 BC850 BC859 BC859B BC859C BC860A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC859; BC860 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 26 Philips Semiconductors Product specification
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M3D088
BC859;
BC860
BC849
BC850.
SCA54
117047/00/02/pp12
BC860
BC859B 215
BC859A
BC860C
BC850
BC859
BC859B
BC859C
BC860A
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74ABT16244
Abstract: Hitachi DSA0088 Nippon capacitors
Text: HB56U172E-6C/7C/8C Preliminary 1,048,576-Word x 72-Bit High Density Dynamic RAM Module Rev. 00 May. 12, 1995 The HB56U172E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56U172E-6C/7C/8C
576-Word
72-Bit
HB56U172E
HM514405CTT)
16-bit
74ABT16244
Hitachi DSA0088
Nippon capacitors
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Hitachi ED 101
Abstract: Hitachi DSA0088 74ABT16244ADGG 5151L
Text: HB56U164EJ-6C/7C/8C 1,048,576-Word x 64-Bit High Density Dynamic RAM Module Rev. 0.0 May. 22, 1995 The HB56U164EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56U164EJ-6C/7C/8C
576-Word
64-Bit
HB56U164EJ
HM514405CS)
16-bit
74ABT16244ADGG)
Hitachi ED 101
Hitachi DSA0088
74ABT16244ADGG
5151L
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PCR 406 J
Abstract: transistor pcr 406 PE2D p781 JCOP bootloader fprog II TST 9007 pcr 406 f p531
Text: WARNING: THIS DIGITAL REPRODUCTION DOES NOT MEET WITH MOTOROLA’S STANDARD FOR QUALITY While we regret the electronic source for the following document does not comply with Motorola’s standard for quality, it currently represents the best reproduction available. Improving the quality of substandard digital reproductions is a key goal. To improve the standard,
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rp2368q
AN1718/D
1ATX35878-0
PCR 406 J
transistor pcr 406
PE2D
p781
JCOP
bootloader
fprog II
TST 9007
pcr 406 f
p531
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Brad Harrison
Abstract: dn60947
Text: CATALOGUE SMA LIMI Honeywell LISTING 9 I4 CE S E R I E S PRECISION SWITCH ISSUP SWITCH TYPP OPTIONS RPLPASP NUMBPR CHART MTC-CE-52 MAX- G M AX LO LU m CJ . 8 MAX — PRETRAVEC 2 HOLES 5.1 DIA C/BORE 0.2 DIA X 6 DEEP — 3 MI N OVERTRAVEC , ° ^ CC < — I
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CN-14214
CN1544
CN-16516
CN-453
MTC-CP-52
20ITHIN
250VAC
IEC947-5-DN60947-5-ACI
947-5-OPTIONS
I25VAC
Brad Harrison
dn60947
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SOT89 MARKING CODE 3D
Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK
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OT143,
OT223
OT323
PXTA27
BCX51
BCW60A
BCW60B
BCX51-10
BCW60C
BCX51-16
SOT89 MARKING CODE 3D
sot89 mark code AE
sot23 mark code AE
3D sot23
SOT89 marking cec
SOT89 MARKING CODE 43
marking 1p sot23
sot23 p04 marking
marking P1R
SOT89 MARKING 5G
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tape head preamp circuit
Abstract: No abstract text available
Text: XR-505/505R 5V R/W Preamplifier for 3 Terminal Recording Heads, 2 or 4 Channels GENERAL DESCRIPTION PIN ASSIGNMENT The XR-505 is a monolithic disk drive integrated circuit providing read mode preamplification, write current control, and head selection. It requires a single +5V
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XR-505/505R
XR-505
tape head preamp circuit
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23436B-XXBS36/DS36 4,194,304-Word by 36-Bit DRam Module: Fast Page Mode DESCRIPTION The OKI M SC 23436B-xxBS36/D S36 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access Memory M odule composed of thirty-six 4-M b DRAM s in SOJ MSM514100B packages mounted
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MSC23436B-XXBS36/DS36
304-Word
36-Bit
23436B-xxBS36/D
MSM514100B)
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23836-XXBS24/DS24 í!'T C ítóíi® ¡rf 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23836-xxBS24/D S24 is a fully decoded 8,388,608-w ord x 36-bit CM OS Dynamic Random Access Memory Module com posed of sixteen 16-Mb DRAMs in SOJ M SM 5117400 packages and eight 4Mb DRAMs in SOJ (M SM 514100B) packages mounted with tw enty-four 0.2|j,F decoupling capacitors on a
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MSC23836-XXBS24/DS24
608-Word
36-Bit
23836-xxBS24/D
608-w
16-Mb
514100B)
72-pin
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Untitled
Abstract: No abstract text available
Text: cO IITSU April 1997 Revision 1.2 data sh e e t ESA8UN324 2/4 (A)-(60/70)(J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)(A)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM
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ESA8UN324
32MByte
32-megabyte
32bits,
72-pin,
ESA8UN3242
ESA8UN3244
MB811
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ESA4UN3242A
Abstract: No abstract text available
Text: cO IITSU April 1997 Revision 1.1 data sh e e t ESA4UN324 2/4 (A)-(60/70)(J/T)(G/S)-S 16MByte (4M x 32) CMOS EDO DRAM Module General Description The ESA4UN324(2/4)(A)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM
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ESA4UN324
16MByte
16-megabyte
32bits,
72-pin,
ESA4UN3242
ESA4UN3244
ESA4UN3242A
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rs tube
Abstract: AK 3060 ScansU9X22
Text: rm orpoH R e ctify in g d isc h a rg e tube G a sg e fü llte G le ich rich te rrö h re UA025A - nPHM EHEHHE JIaMna TECJIA UA025A »BjiaeTcs ra 30ra 30Tp0H0M c o ä h k m aHoaoM, HanoJiHeHHBiM aproHOM h paSoTaioinHM B ÄHana30He TeMnepaTypu OKpy*aK meä cpeaH o t + 7 0
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UA025A
30Tp0H0M
Hana30He
UA025A,
DCG4-1000
UA025A
rs tube
AK 3060
ScansU9X22
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Untitled
Abstract: No abstract text available
Text: IITSU February 1997 Revision 1.0 data she e t ESA2UN321 1/4 -(60/70)(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA 2U N 321(1/4)-(60/70)(J/T)(G /S )-S is a high performance, EDO (Extended Data Out) 8-m egabyte dynamic RAM module
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ESA2UN321
32bits,
ESA2UN3211
ESA2UN3214
MB811
1Mx16
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MSC23V23258D-70BS4
Abstract: MSC23V23258D-XXBS4
Text: MSC23V23258D-xxBS4 98.3.12 OKI semiconductor MSC23V23258D-XXBS4 2,097,152 Word X 32 Bit DYNAMIC RAM MODULE DE S C R IP TIO N The Oki MSC23V23258D-xxBS4 is a fully decoded, 2,097,152-word X 32 bit CMOS dynamic random access memory composed of four 16-Mb (1 Mx16) DRAMs in TSOP packages. The mounting of four DRAMs together
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MSC23V23258D-xxBS4
MSC23V23258D-xxBS4
152-word
16-Mb
100-pin
32-Bit
cycles/16
10Row/10Coiumn
MSC23V23258D-70BS4
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23441 -xxBS10/DS10 [FrtlSmSuisirf 4,194,304-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23441-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages m ounted with
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MSC23441
-xxBS10/DS10
304-Word
40-Bit
MSC23441-xxBS10/DS10
16-Mb
MSM5116400)
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23409B/BL-xxDS9 is a fully decoded 4,194,304-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs in SOJ MSM514100B/BL packages, mounted
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MSC23409B/BL-XXDS9
304-Word
MSC23409B/BL-xxDS9
MSM514100B/BL)
30-pin
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cd74ac191
Abstract: No abstract text available
Text: Technical D a ta _ CD54/74AC191 CD54/74ÄCTT91 PO PI ASYN. P A R A L L E L 1 Presettable Synchronous 4-Bit Binary Up/Down Counter P2 P3 15 1 10 9 LO AD ENABLE Type Features: • Buffered inputs m Typical propagation delay: 12.8ns@ Vcc = 5V, TA = 25°C, CL = 50pF
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CD54/74AC191
CD54/74
CTT91
RCA-CD54/74AC191
CD54/7
4ACT191
down-191
CD54/74ACT191
cd74ac191
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M5M44500
Abstract: M5M44500CJ 9D01 M5M418160D M5M418160DJ
Text: MITSUBISHI LSIs Some of contents are subject to change without notice. > M a i i ^ m n ¿ M <• ^ ^ # o b U A • i p v p. « j / U N X > p ^ _ J - o 5- o , - 7 FAST PAGE MODE 75510432-BIT 2097512-WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW)
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75510432-BIT
2097512-WORD
36-BIT
MH2M36DXJ/DNXJ
36-bits
MIT-DS-0193-0
26/June
M5M44500
M5M44500CJ
9D01
M5M418160D
M5M418160DJ
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Untitled
Abstract: No abstract text available
Text: 1 PRELIMINARY a Am79468 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant resistance ■ Programmable loop current detector threshold ■ On-hook transmission with -50 V to -58 V battery ■ On-chip ring relay driver
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Am79468
PBL3762
Powe0257527
0035H7Ã
02S75B7
0D354flG
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MSM5116400
Abstract: No abstract text available
Text: O K I Semiconductor MSC23441 -xxBS10/0S10 [PreloraHDuDSF/ 4,194,304-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23441-xxBS10/D S10 is a fully decoded 4,194,304-word x 40-bit CM OS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages mounted with
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MSC23441
-xxBS10/DS10
304-Word
40-Bit
MSC23441-xxBS10/DS10
16-Mb
MSM5116400)
72-piri
MSM5116400
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Untitled
Abstract: No abstract text available
Text: <8 > MOTOROLA M C33363 A dvance Information High Voltage Switching Regulator The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on-chip 700 V/1.0 A SenseFET power switch,
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C33363
MC33363
PT1950,
3ti75Â
MC33363
b3b7253
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V53C181608-1024
Abstract: No abstract text available
Text: MOSEL VITELIC V53C181608 1M X 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAc 50 ns 60 ns 70 ns Max. Column Address Access Time, (Iqaa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C181608
16-bit
V53C181608-1024
cycles/16
42-pin
V53C181608
104-VITELIC
b3533Tl
0003b44
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