Untitled
Abstract: No abstract text available
Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,
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HY51V4403B
576x4-bit.
HY51V4403B
1AC16-10-MAY95
HY51V4403BJ
HY51V4403BLJ
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Untitled
Abstract: No abstract text available
Text: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words
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HY57V16161
476x16
4b75Gflfi
1SD03-00-MAY95
400mil
4b750flÃ
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Untitled
Abstract: No abstract text available
Text: HY51V16100A Series •HYUNDAI 16Mx 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques
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HY51V16100A
1AD21-00-MAY9S
HY51V161OOA
HY51V16100AJ
HY51V16100ASU
HY51V16100AT
HY51V16100ASLT
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Untitled
Abstract: No abstract text available
Text: •«HYUNDAI HYM5V64404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY51V16404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin giass-epoxy printed circuit board. 0.1
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HYM5V64404A
64-bit
HY51V16404A
HYM5V64404AKG/ATKG/ASLKG/ASLTKG
A0-A11)
DQ0-DQ63)
DDDST42
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A17a
Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16
Text: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400
512KX
288x8-bits
speed-55/70/85/100ns
1DE01
-11-MAY95
A17a
HY628400LLG55
HY628400LLG
6da6
HY628400LG
A18A
tsop 338 IR
1A13
DA16
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Untitled
Abstract: No abstract text available
Text: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge
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HY67V16100/101
64Kx16
486/Pentium
7ns/12ns/17ns
67MHz
486/Pentium
1DH06-11-MAY9S
HY67V16100/101
1DH06-11-MAY95
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