irkt 132 12
Abstract: No abstract text available
Text: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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4B55452
S545E
JDDlb74b
irkt 132 12
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125dc/125dc
Abstract: s1na E1017 R52KF10A 0S81 25B0
Text: 4855452 II JO R I D S T T ^ 4B55452 000801,2 3 | ~ 0e |62 Data Sheet No. PD-2.188 in t e r n a t io n a l r e c t if ie r O y~.a 3 . ^ 3 q INTERNATIONAL RECTIFIER R52KF SERIES 1200-1000 VOLTS RANGE REVERSE RECOVERY TIME 1.2//S * 1100 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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08Q62
R52KF
R52KF10A.
D0-200AC
E1017
125dc/125dc
s1na
R52KF10A
0S81
25B0
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5566-4
Abstract: max3824
Text: P D 9 .1 6 1 5 International I R Rectifier FA38SA50 PRELIMINARY H E X F E T P o w er M O S F E T Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance
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FA38SA50
OT-227
5566-4
max3824
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • MÖ55452 GD17Elb S27 M I N R PD-2.333 3o c p q o so International [?o r JRectifier 3 o c pq io o SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features 30CPQ. Units lF AV Rectangular waveform 30
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GD17Elb
30CPQ.
Tj-125Â
O-247
D-181
Mfl55452
30CPQ080
30CPQ100
D-182
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hf50c120
Abstract: No abstract text available
Text: International IO R Rectifier PD'2-496 H F 50C 120A C B TARGET HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form D e s c rip tio n P a ra m e te r G u a ra n te e d (M in /M a x ) T e s t C o n d itio n s
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HF50C120ACB
250pA
hf50c120
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V
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IR2113
IR2113S
IRFBC30)
IR2113STj
IRFBC20)
IRFPE50)
IRFBC40)
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Untitled
Abstract: No abstract text available
Text: International muRectifier P D - 9 .1 2 6 0 A IRLML5103 PRELIMINARY H E X F E T P ow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm Available in Tape and Reel
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IRLML5103
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Untitled
Abstract: No abstract text available
Text: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.
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IRGCH50SE
IRGCH50SE
250pA,
250pA
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thyristor BT 161
Abstract: No abstract text available
Text: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability
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E78996
thyristor BT 161
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Untitled
Abstract: No abstract text available
Text: Bulletin 12083/B International SR ectifier SD300C.C s e r ie s STANDARD RECOVERY DIODES Hockey Puk Version 650A Features • Wide current range ■ High voltage ratings up to 3200V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version
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12083/B
SD300C.
DQ-200AA
0100S
4A55452
D-112
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Untitled
Abstract: No abstract text available
Text: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses
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IRGBC20MD2
10kHz)
O-22QAB
C-356
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Untitled
Abstract: No abstract text available
Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V
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IRGCC30UE
250pA,
250pA
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier PD‘2500 H F30A 060A C B TARGET HF30A060ACB Hexfred Die in Wafer Form 600 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter V fm BV r I RM Description Guaranteed (Min/Max) Forward Voltage Test Conditions 1.8V Max.
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HF30A060ACB
250pA
100mm,
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Untitled
Abstract: No abstract text available
Text: PD - 5.025A International [iggRectifier CPV364MU IGBT SIP MODULE Ultra-Fast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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CPV364MU
360Vdc,
th704
C-764
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Untitled
Abstract: No abstract text available
Text: Bulletin 125170/A International [^Rectifier s t 333c .c s e r ie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • Metal case with ceramic insulator ■ International standard case T0-200AB E-PUK ■ All diffused design ■ Center amplifying gate
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125170/A
T0-200AB
ST333C.
D-597
0D273b0
D-598
55MS2
Q0273b2
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Untitled
Abstract: No abstract text available
Text: Bulletin 125167/B International S Rectifier s th o s s e rie s PHASE CONTROL THYRISTORS Stud Version Features 110A • C e n te r g a te ■ H e rm e tic m e ta l c a s e with c e ra m ic in s u lato r A lso a v a ila b le w ith g la s s -m e ta l s e a l up to 1 2 0 0 V
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125167/B
4A5SM52
ST110S
66ms-
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MT29VZZZAD8DQKSM-053 W ES.9D8
Abstract: No abstract text available
Text: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.
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IRGCH30SE
IRGCH30SE
250pA,
250pA
MT29VZZZAD8DQKSM-053 W ES.9D8
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier PD'2'501 H F 10A 060A C B TARGET HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) Test Conditions Forward Voltage 1.8V Max. bvr
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HF10A060ACB
250pA
100mm,
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2N2023-30
Abstract: 2N1800 JAN TRANSISTOR D1651 2N1792 2N1804 2N1805 2N1807 2N1909 2N1792 Series 2N2023
Text: S S INTERNATIONAL RECTIFIER 4855^5^"INTERNATIONAL DE | 4 A S S 4 5 5 RECTIFIER 55C 0 D G 4 ñ 2 3 CH823 Ü Data Sheet No. PD-3.082 in t e r n a t io n a l r e c t if ie r 2 N 1 7 9 2 , S N S 1 N 8 Q 5 , S S O S 3 H O A m p Major Raxings and Characteristics
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4flSS45E
2N1792
2N1804
2N1909
2N1916
2N1805
2N1807
2N2023
2N2030
2N1803
2N2023-30
2N1800 JAN
TRANSISTOR D1651
2N1792 Series
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IR 50RIA120
Abstract: 50RIA5 HALF WAVE RECTIFIER CIRCUITS high speed FULL WAVE RECTIFIER CIRCUITS with scr A14U T30 rectifier 50RIA120 50RIA60 SCR 50RIA20 50RIA20
Text: INTERNATIONAL RECTIFIER 4ÖSS4S2 0G13M53 bT7 • INR STE D OCT 0 3 1990 Data Sheet No. PD-3.062B INTERNATIONAL RECTIFIER 50RIA SERIES 8 0 Amp RMS SCRs Description/Features Major Ratings and Characteristics This series of medium power thyristors is intended for
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0G13M53
50RIA
000V/MS
S-16212
IL60067.
NJ07650.
IR 50RIA120
50RIA5
HALF WAVE RECTIFIER CIRCUITS high speed
FULL WAVE RECTIFIER CIRCUITS with scr
A14U
T30 rectifier
50RIA120
50RIA60
SCR 50RIA20
50RIA20
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage
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IRGCH40SE
250pA,
250pA
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Untitled
Abstract: No abstract text available
Text: MA5SMS2 O O lS flfiO 0 3 3 « I N R International k »: Rectifier IRLD024 HEXFET Power MOSFET • • • • • • • PD-9.629A INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating For Automatic Insertion End Stackable Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V
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IRLD024
4B55452
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5d3 diode
Abstract: A/SMD 5d3 diode
Text: PD -9.1488 International l R Rectifier IRFI9634G PRELIMINARY HEXFET Power M OSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -250V R DS on = 1 -0Q
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IRFI9634G
-250V
O-220
4BS54S2
5d3 diode
A/SMD 5d3 diode
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