ST C 236 DIODE
Abstract: N3NF06L
Text: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive
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STN3NF06L
OT-223
OT-223
STN3NF06L
ST C 236 DIODE
N3NF06L
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STN4NE03
Abstract: No abstract text available
Text: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STN4NE03
OT-223
STN4NE03
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STN4NE03L
Abstract: No abstract text available
Text: STN4NE03L N - CHANNEL 30V - 0.037Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE STN4NE03L V DSS R DS on ID 30 V < 0.05 Ω 4A TYPICAL RDS(on) = 0.037 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STN4NE03L
OT-223
STN4NE03L
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N3NF06L
Abstract: STN3NF06L
Text: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive
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STN3NF06L
OT-223
OT-223
STN3NF06L
N3NF06L
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STN4NE03
Abstract: No abstract text available
Text: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STN4NE03
OT-223
STN4NE03
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N3NF06
Abstract: No abstract text available
Text: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description
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STN3NF06
OT-223
OT-223
STN3NF06
N3NF06
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N3NF06
Abstract: st MARKING E4 JESD97 STN3NF06 N-3-NF
Text: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description
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STN3NF06
OT-223
N3NF06
st MARKING E4
JESD97
STN3NF06
N-3-NF
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Untitled
Abstract: No abstract text available
Text: STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION
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STN3NF06
OT-223
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STN4NE03L
Abstract: GS 669
Text: STN4NE03L N - CHANNEL 30V - 0.037Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE STN4NE03L • ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.05 Ω 4A TYPICAL RDS(on) = 0.037 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STN4NE03L
OT-223
STN4NE03L
GS 669
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STN3NF06
Abstract: No abstract text available
Text: STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION
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STN3NF06
OT-223
STN3NF06
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P008B DIODE
Abstract: STN3NF06L
Text: STN3NF06L N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
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STN3NF06L
OT-223
P008B DIODE
STN3NF06L
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STN3NF06L
Abstract: No abstract text available
Text: STN3NF06L N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
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STN3NF06L
OT-223
STN3NF06L
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P008B DIODE
Abstract: STN4NF03L
Text: STN4NF03L N-CHANNEL 30V - 0.039Ω - 4A SOT-223 STripFET POWER MOSFET TYPE STN4NF03L • ■ VDSS RDS on ID 30V <0.05Ω 4A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
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STN4NF03L
OT-223
P008B DIODE
STN4NF03L
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X5T955
Abstract: No abstract text available
Text: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATOIN TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T955G
OT223
-140V
OT223
ZX5T955GTA
ZX5T955GTC
X5T955
X5T955
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X5T955
Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
Text: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T955G
OT223
-140V
OT223
ZX5T955GTA
ZX5T955GTC
X5T955
"PNP Transistor"
ZX5T955G
ZX5T955GTA
ZX5T955GTC
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zxtP
Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
Text: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2014G
OT223
-140V
OT223
ZXTP2014GTA
ZXTP2014GTC
zxtP
ZXTP2014G
ZXTP2014GTA
ZXTP2014GTC
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ZXTP2014G
Abstract: ZXTP2014
Text: A Product Line of Diodes Incorporated ZXTP2014G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current
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ZXTP2014G
OT223
-140V
-120mV
AEC-Q101
OT223
J-STD-020
ZXTP2014G
DS33716
ZXTP2014
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X5T955
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZX5T955G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current
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ZX5T955G
OT223
-140V
-120mV
AEC-Q101
OT223
J-STD-020
ZX5T955G
DS33426
X5T955
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MOS FET SOT-223 ON
Abstract: No abstract text available
Text: SSM9575 -4A, -60V,RDS ON 90mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-223 The SSM9575 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
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SSM9575
OT-223
SSM9575
01-Jun-2002
MOS FET SOT-223 ON
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Untitled
Abstract: No abstract text available
Text: ZX5T955G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in
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ZX5T955G
OT223
-140V
OT223
5T955GTA
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Untitled
Abstract: No abstract text available
Text: ZXTP2014G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2014G
OT223
-140V
OT223
TP2014GTA
TP20852)
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GL9575
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/02/18 REVISED DATE : GL9575 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -60V 90m -4A Description The GL9575 provide the designer with the best combination of fast switching, ruggedized device design, low
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GL9575
GL9575
OT-223
OT-223
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9575 mosfet
Abstract: No abstract text available
Text: SSM9575 -4A , -60V , RDS ON 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION SOT-223 The SSM9575 provide the designer with the best combination of fast switching, ruggedized device
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SSM9575
OT-223
SSM9575
OT-223
12-Mar-2012
9575 mosfet
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FZT705
Abstract: No abstract text available
Text: FZT705 SOT223 PIMP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FEATURES * 2W POWER DISSIPATION. * 2A C O N TIN U O U S lc. * 4A PEAK lc. * GUARANTEED H fe SPECIFIED UP TO 2A. * COMPLEM ENTARY T Y P E -F Z T 6 0 5 PARTMARKING DETAIL - FZT705 ABSOLUTE M A XIM U M RATINGS
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OT223
TYPE-FZT605
FZT705
-100tiA
300ns.
DS278
100mA
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