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    4A MARKING TRANSISTOR Search Results

    4A MARKING TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    4A MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 4a sot-89

    Abstract: sot89 MARKING 4A SOT89 transistor marking 4A 4A marking transistor MARK 4A KIA7419F transistor 4a marking MARKING 4a 4A SOT89
    Text: SEMICONDUCTOR KIA7419F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 4A KIA7419F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only


    Original     		PDF KIA7419F OT-89 marking 4a sot-89 sot89 MARKING 4A SOT89 transistor marking 4A 4A marking transistor MARK 4A KIA7419F transistor 4a marking MARKING 4a 4A SOT89

    BC859 smd

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E


    Original     		PDF OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC859 smd BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859

    bc860

    Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
    Text: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING


    Original     		PDF BC857/BC858 BC859/BC860 BC857A BC857B BC858A BC860B BC860A BC859B BC859A BC858B bc860 bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A

    BC859

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F


    Original     		PDF ISO/TS16949 OT-23 BC859 BC860 BC859A BC859B BC859C BC860A BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C

    power transistor Ic 4A NPN smd

    Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1047A Type000 50MHz power transistor Ic 4A NPN smd transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE sat 40mÙ at 4A.


    Original     		PDF FCX1047A 4008-318-1IC 50MHz

    TRANSISTOR BC 208

    Abstract: DMN3410 J-STD-020A marking xy
    Text: DMN3410 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3410 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW


    Original     		PDF DMN3410 SC-59, J-STD-020A MIL-STD-202, SC-59 DS30375 TRANSISTOR BC 208 DMN3410 J-STD-020A marking xy

    TRANSISTOR BC 545

    Abstract: No abstract text available
    Text: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·


    Original     		PDF DMN3410 SC-59 SC-59, J-STD-020A MIL-STD-202, DMN3410-7 3000/Tape com/datasheets/ap02007 DS30375 TRANSISTOR BC 545

    TRANSISTOR BC 545

    Abstract: 23N40
    Text: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·


    Original     		PDF DMN3410 SC-59 SC-59, J-STD-020A MIL-STD-202, DMN3410-7 3000/Tape com/datasheets/ap02007 DS30375 TRANSISTOR BC 545 23N40

    TRANSISTOR BC 545

    Abstract: 25C03
    Text: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·


    Original     		PDF DMN3410 SC-59 SC-59, J-STD-020A MIL-STD-202, DMN3410-7 3000/Tape com/datasheets/ap02007 DS30375 TRANSISTOR BC 545 25C03

    ST2300

    Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
    Text: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		PDF ST2300 ST2300 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23

    TRANSISTOR BC 545

    Abstract: No abstract text available
    Text: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data


    Original     		PDF DMN3410 SC-59 SC-59, J-STD-020A MIL-STD-202, DS30375 DMN3410-7 3000/Tape TRANSISTOR BC 545

    TRANSISTOR BC 545

    Abstract: No abstract text available
    Text: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data


    Original     		PDF DMN3410 SC-59 SC-59, J-STD-020A MIL-STD-202, DS30375 DMN3410-7 3000/Tape TRANSISTOR BC 545

    ST2300

    Abstract: MARKING CODE mosfet marking code 4A n channel power trench MOSFET
    Text: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		PDF ST2300 ST2300 OT-23-3L MARKING CODE mosfet marking code 4A n channel power trench MOSFET

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DMN3210-7 OT-23 3000/Tape com/datasheets/ap02007 DS30388

    DMN3210

    Abstract: J-STD-020A
    Text: DMN3210 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3210 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30388 DMN3210 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, OT-23 3000/Tape com/datasheets/ap02007 DS30388

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DMN3210-7 OT-23 3000/Tape com/datasheets/ap02007 DS30388

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD X1049A NPN SILICON TRANSISTOR HIGH GAIN TRANSISTOR  FEATURES 1 * VCEV = 80V * High Gain * 20 Amps pulse current TO-220F 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free X1049AL-TF3-T X1049AG-TF3-T X1049AL-T92-B


    Original     		PDF X1049A O-220F X1049AL-TF3-T X1049AG-TF3-T X1049AL-T92-B X1049AG-T92-B X1049AL-T92-K X1049AG-T92-K

    DZT953

    Abstract: marking code IC 4A DZT853 DZT953-13 marking codes IC sot-223
    Text: SPICE MODELS: DZT953 DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DZT953 DZT853) OT-223 J-STD-020C MIL-STD-202, DS30941 DZT953 marking code IC 4A DZT853 DZT953-13 marking codes IC sot-223

    4A SOT223 MARKING CODE

    Abstract: DZT953 NPN 1A 100V SOT-223
    Text: DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DZT953 DZT853) OT-223 OT-223 J-STD-020C MIL-STD-202, DS30941 4A SOT223 MARKING CODE DZT953 NPN 1A 100V SOT-223

    Untitled

    Abstract: No abstract text available
    Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 i Pin configuration


    OCR Scan     		PDF BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC860C

    transistor B 560

    Abstract: HFG TRANSISTOR 2SD2098 SOT89 transistor marking 4A rohm surface mounted transistor series
    Text: 2SD2098 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2098; D J ^ , where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.3 V for lC/lB - 4A/0.1 A •


    OCR Scan     		PDF 2SD2098 OT-89, SC-62) 2SD2098; 2SD2098 transistor B 560 HFG TRANSISTOR SOT89 transistor marking 4A rohm surface mounted transistor series

    Untitled

    Abstract: No abstract text available
    Text: CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN m m CSC2712Y*1E CSC2712GR G =*1F CSC2712BL(L)=1 G 3.0_ 2.8 “ Û.09 o3a Pin configuration 1 » BASE 2 = EM ITTER 3 = COLLECTOR 0.14 o.4a L


    OCR Scan     		PDF CSC2712 CSC2712Y CSC2712GR CSC2712BL