1E14
Abstract: 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE
Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 97 /Subject (4A, 250V, 0.610 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.610
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JANSR2N7397
FSL234R4
R2N73
1E14
2E12
FSL234R4
JANSR2N7397
Rad Hard in Fairchild for MOSFET
hirel systems transformer
3OBE
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PDF
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Rad Hard in Fairchild for MOSFET
Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700
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Original
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JANSR2N7278
FRL234R4
R2N72
1000K
100opment.
Rad Hard in Fairchild for MOSFET
mosfet 250V 4A
1E14
2E12
FRL234R4
JANSR2N7278
MOSFET A3
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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Original
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JANSR2N7397
FSL234R4
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSL234D,
FSL234R
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PDF
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IRSM836-044MA
Abstract: No abstract text available
Text: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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IRSM836-044MA
IRSM836-044MA
12x12mm
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PDF
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1E14
Abstract: 2E12 FRL234D FRL234H FRL234R
Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL234D,
FRL234R,
FRL234H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRL234D
FRL234H
FRL234R
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PDF
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Untitled
Abstract: No abstract text available
Text: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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Original
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IRSM836-044MA
IRSM836-044MA
12x12mm
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PDF
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N-channel enhancement 200V 60A
Abstract: TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R
Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL234D,
FRL234R,
FRL234H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
N-channel enhancement 200V 60A
TC 9310 IC DATA SHEET
1E14
2E12
FRL234D
FRL234H
FRL234R
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PDF
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IRMCS1471
Abstract: JS-001-2012 2C diode IRMCK171
Text: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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Original
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IRSM836-044MA
IRSM836-044MA
12x12mm
IRMCS1471
JS-001-2012
2C diode
IRMCK171
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PDF
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Untitled
Abstract: No abstract text available
Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL234D,
FRL234R,
FRL234H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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PQFN footprint
Abstract: No abstract text available
Text: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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Original
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IRSM836-044MA
IRSM836-044MA
12x12mm
PQFN footprint
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings
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Original
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JANSR2N7278
FRL234R4
1000K
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PDF
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1E14
Abstract: 2E12 FRL234R4 JANSR2N7278
Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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JANSR2N7278
FRL234R4
1000K
1E14
2E12
FRL234R4
JANSR2N7278
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PDF
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S215
Abstract: S216R S215E-SP
Text: Keylock Switches Specifications: Contact rating Maximum contact resistance Minimum insulation resistance Dielectric strength Lock Tumbler mechanism Keys Contacts Terminals : : : : : : : : : 4A @ 125V ac, 2A @ 250V ac, 4A @ 28V dc UL/CUL . 10mΩ. 500MΩ (500V dc).
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S215E-SP
S216R
S215
S216R
S215E-SP
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PDF
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1E14
Abstract: 2E12 FSL234R4 JANSR2N7397
Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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JANSR2N7397
FSL234R4
1E14
2E12
FSL234R4
JANSR2N7397
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PDF
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1E14
Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL234D,
FSL234R
1E14
2E12
FSL234D
FSL234D1
FSL234D3
FSL234R
FSL234R1
FSL234R3
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PDF
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Fuse 250V 4A
Abstract: OMF 125 4A 4A 250V SURFACE MOUNT FUSE omf 63 34030017 2013x
Text: OMF/OMK 250V Quick-acting Surface Mount Fuse and Fuseholder IEC 127-4/2; EN 60127-4/2 UL 248-14 formerly 198G CSA C22.2 No. 248.14 (formerly 59.2M) Approvals: UL recognition CSA certification VDE registration 250mA-4A File #E41599 250mA-4A File #LR51172
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250mA-4A
E41599
LR51172
250mA-4A*
250mA-2
250mA
Fuse 250V 4A
OMF 125 4A
4A 250V SURFACE MOUNT FUSE
omf 63
34030017
2013x
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PDF
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JS-TK-6657HR1S-08
Abstract: No abstract text available
Text: 1 2 3 4 5 6 7 8 9 A A SPECIFICATIONS Material: Rating: B Nylon UL94V-2, Natural UL 250V 5A, AC/DC CSA 250V 4A, AC/DC TUV 250V 7A AC/DC B C C D D E E Series JS-TK Pluggable Connector F Type 6657HR1S PCI Wiremount Connector Positions 08 08=8 Positions RoHS compliant
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UL94V-2,
6657HR1S
JS-TK-6657HR1S-08
JS-TK-6657HR1S-08
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PDF
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IR-021
Abstract: ir041 IR-061 2200 uf 250v 0-50mA IR-041 250V4A
Text: New Page 1 Page 1 of 4 IR-*0 C/D -*TYPE : UL,CSA,TÜV,SEMKO approved. Rated Voltage Rated Current (AC,DC) Model IR-021(2)2-S(H) LeakageCurrent (250V AC) 0.35mA max. 250V 2A IR-021(2)3-S(H) 0.50mA max. IR-041(2)2-S(H) 0.35mA max. 250V 4A IR-041(2)3-S(H) 0.50mA max.
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IR-021
IR-041
IR-061
2200pF
3300ptor
3300pF
ir041
2200 uf 250v
0-50mA
250V4A
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PDF
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Untitled
Abstract: No abstract text available
Text: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs
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OCR Scan
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FSL234D,
FSL234R
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7397 SS MAR Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.61 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL234R4
JANSR2N7397
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSL234D,
FSL234R
36MeV/mg/cm2
100Kolder)
254mm)
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PDF
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Untitled
Abstract: No abstract text available
Text: 33 JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 4A, 250V, rDS ON = 0.700Q The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings
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OCR Scan
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FRL234R4
JANSR2N7278
1000K
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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switch AU 101
Abstract: digitast
Text: TO K O SW ITCHES A vailable only in Japan Switch applications (Available only in Japan) Class 76 X-f 7 Application Type Audio equip. Comment Video equip. DC b- For power switches NE18-2U NE18-2a Push AC 250V 6A MSA AC 250V 4A For key board switches MD Disc
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OCR Scan
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NE18-2U
NE18-2a
250mA
100mQ
50mi2
100miJ
RTE02
RTE10
100mA
switch AU 101
digitast
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PDF
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