IRGBC46
Abstract: VQE 22 vqe 22 d RGBC4
Text: INTERNATIONAL RECTIFIER SbE D • 4SSS452 OOlQblS b ■ Data Sheet No. PD-9.667 T-3^-03 In f e m a t ip n a l INSULATED GATE BIPOLAR TRANSISTOR IRGBC46 60QV, 60A / 0 V\ lIO R lR e c t i f i e r Ü ■ V 600V, 60A, TO-220AB IGBT FEATURES International Rectifier's IRG series of Insulated Gate
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SS452
IRGBC46
O-220AB
IRGBC46
VQE 22
vqe 22 d
RGBC4
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-6.013A International [ml Rectifier HIGH VOLTAGE IR 2 TIO L MOS GATE DRIVER General Description Features The IR2110L is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary
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IR2110L
IR2110L
MO-Q36AB
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Untitled
Abstract: No abstract text available
Text: International B Rectifier HEXFRED Provisional Data Sheet PD-2.361 HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M ajor Ratings and Characteristics per Leg Characteristics Units Vr 1200 V 8 .0 A V rrm I f AV) trr (typ) 28 ns Q rr (typ) 140 nC I rrm (typ)
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HFA16PA120C
re3331,
D-6380
4flSS452
002104b
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Untitled
Abstract: No abstract text available
Text: PD - 9.688A International io r i Rectifier IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve
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IRGBC30S
O-220AB
TQ-220AB
S54S2
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Untitled
Abstract: No abstract text available
Text: International S I Rectifier Data Sheet No. PD-6.076 IR02H420 HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation
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IR02H420
IR02H420
5M-1982.
D25T27
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diode c552
Abstract: G0551 IRGDDN200M12 IGBT 200A 1200V G-549
Text: Ife g g jig g i^ B jK e c n n e r IR G D D N 2 0 0 M Î2 iR O R P N g n n M ig "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 1200V *c = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGDDN200M12
IRGRDN200M12
100nH
D02G344
diode c552
G0551
IGBT 200A 1200V
G-549
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Untitled
Abstract: No abstract text available
Text: 4855452 International !“R R ectifier OCH H I N R PD-9.642A IRFI840G HEXFET Pow er M O S F E T • • • • • 00J517A INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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IRFI840G
00J517A
O-220
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N mosfet 100v 200A
Abstract: No abstract text available
Text: International lira] Rectifier PD-9.813 IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz
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IRGMIC50U
20kHz
IRGMIC50UD
IRGMIC50UU
O-259
G-114
N mosfet 100v 200A
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