RAS 0510
Abstract: as4c14400-60jc AS4C14400-40JC alliance as4C14405 AS4C14405-50JC AS4C14405-60JC AS4C14400 AS4C14405 4C14400-70 alliance promotion
Text: High Performance 1Mx4 CMOS DRAM 4C14400 AS4C14405 1M-bit × 4 CMOS DRAM Fast page mode or EDO Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 4 bits • High speed - RAS-only or CAS-before-RAS refresh
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AS4C14400
AS4C14405
20/26-pin
AS4C14400)
AS4C14405)
RAS 0510
as4c14400-60jc
AS4C14400-40JC
alliance as4C14405
AS4C14405-50JC
AS4C14405-60JC
AS4C14400
AS4C14405
4C14400-70
alliance promotion
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Untitled
Abstract: No abstract text available
Text: 4C14400.fr5 Page 209 Thursday, April 29, 1999 4:02 PM •^■1 Preliminary information 4C14400 A 5V !M x 4 CMOS DRAM fast page mode Features • Organization: 1,04 8 ,5 7 6 words x 4 bits • High speed ■TTL-compatible, three-state I/O ■JEDEC standard packages
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4C14400
AS4C14400
AS4C14400-50JC
20/26-pin
AS4C14400-60JC
AS4C14400
n-30005-A.
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Untitled
Abstract: No abstract text available
Text: H i Il P e r f o r m a I M x-I ih i - \ S 4 1 4 4 00 H i l ( MOS DRAM i M X 4 C M O S D R A M ( l .isi pa” <- n m ilr i P relim inar ' inform ation Features • 1024 refresh cycles, 16 m s refresh interval • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 4 bits
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AS4C14400
Abstract: 4C14400-60
Text: H ig h P e rfo rm a n c e lM x 4 _ II CM OS DRAM A S 4C 14400 JS Iw 1M x 4 CM O S DRAM Fast p a g e m o d e Prelim inary information Features • O rganization: 1,0 4 8 ,5 7 6 w o rd s x 4 bits • H igh speed • 1024 refresh cycles, 16 m s refresh interval
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AS4C14400
20/26-pin
4C14400-60
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130003
Abstract: No abstract text available
Text: J-1i 1*h P< ! t 1 t M 1,1 il! . ' ‘•'4! I 44 1(1 mn il 1 NÌ>- ‘ | l ( \ K i 1- ! H ' ■ . V! i j I i R A \ I M M I .| ; ’ . ' 1 s j i. | ! Preliminary information Features • 1 0 2 4 re fre s h c y d e s , 16 m s re fre s h in terv al - RAS-only o r CAS-befoie-RAS refresh
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S4C14400-50JC
14400-50TC
S4C14400-60JC
14400-60TC
l-30005-A.
130003
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Untitled
Abstract: No abstract text available
Text: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its
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o00oo
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3935-01
Abstract: LSE 0405
Text: H ig h P e rfo rm a n ce mm AS4C1 4 4 0 0 1M X4 II A S4C 14405 CMOS DRAM I M -bit X 4 CMOS DRAM Fast page m ode or EDO P relim in a ry in form ation Features • 1 0 2 4 re fresh cy d es, 16 m s refresh interval • O rganization: 1 ,0 4 8 ,5 7 6 w o rd s x 4 bits
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1DD344
3935-01
LSE 0405
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