Untitled
Abstract: No abstract text available
Text: International S ] Rectifier HEXFET® Power MOSFET • • • • • • 4A55452 □014StlS 115 « I N R PD-9.593B IRC840 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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4A55452
014St
IRC840
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER fc.SE » m 4A55452 Q D 1 L.2 S 7 1 SB • INR Bulletin E27101 International lÜ ] Rectifier IRFK3DC50,IRFK3FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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4A55452
E27101
IRFK3DC50
IRFK3FC50
E78996.
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B25DC
Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Text: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS
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4A55452
B25DC/DA/DS/CS/JS
B25DC
554S2
GGlbS70
20ohm
65ohm
B25DC
ir e.78996
B25DS
E.78996 scr
78996 diode
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Untitled
Abstract: No abstract text available
Text: International k ?r Rectifier I HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • 4A55452 0013146 371 H I N R PD-9.834 IRFI720G Isolated Package High Voltage Isolations 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance
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4A55452
IRFI720G
O-220
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H270
Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
Text: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFI460D
IRFI460U
O-259
MIL-S-19500
SSM52
H270
KU ll 14a
IRFI460
IRFI460D
IRFI460U
SS452
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IRF1010
Abstract: IRF734 SS452
Text: PD-9.999 International H ü Rectifier IRF734 HEXFET Pow er M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration H E X F E T s from International R ectifier provide the de sig ner
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IRF734
O-220
Dra720403
D-6380
IRF1010
IRF734
SS452
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irfae42
Abstract: JRFAE42
Text: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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IRFAE40
IRFAE42
O-204AA
G-237
IRFAE40,
IRFAE42
S54S2
G-238
JRFAE42
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Untitled
Abstract: No abstract text available
Text: Bulletin 125190/B International S Rectifier ST700C.L s e r ie s PHASE CONTROL THYRISTORS Hockey Puk Version Features C e n te r a m p lify in g g a te M e ta l c a s e w ith c e ra m ic in s u la to r In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A C B -P U K
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125190/B
ST700C.
002711b
D-327
D-332
0D27122
D-333
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1RFZ34
Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Text: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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5S452
0Q1577Ö
IRFZ34
O-220
S5452
1RFZ34
STM TO-220 marking
IRFZ34
IRFZ34 international
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3l4 diode
Abstract: No abstract text available
Text: International llQRlRectifier PD- 9.1311 IRFZ34NS P R E L IM IN A R Y HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating T emperature Fast Switching Fully Avalanche Rated V dss = 5 5 V
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IRFZ34NS
D0533T4
3l4 diode
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Untitled
Abstract: No abstract text available
Text: PD 9.1403 International ¡^Rectifier IRFIZ44N PRELIMINARY H EXFET Power M O S F E T Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55 V R ü S o n = Id =
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IRFIZ44N
0D23bc
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Untitled
Abstract: No abstract text available
Text: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGBC20UD2
application16
TQ-220AB
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Untitled
Abstract: No abstract text available
Text: Bulletin 125174/A International S R e c t if ie r ST223C.C s e rie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M etal case w ith ceram ic insulator ■ International standard case T 0 -2 0 0 A B A-PUK ■ A ll diffused design ■ C enter am plifying gate
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125174/A
ST223C.
D-548
485S4S2
DD27317
D-549
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PDF
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transistor c246
Abstract: transistor c245 c245 transistor
Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
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IRGBF30F
10kHz)
O-220AB
C-247
46S5455
TQ-220AB
C-248
transistor c246
transistor c245
c245 transistor
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Untitled
Abstract: No abstract text available
Text: PD - 5.034 International Rectifier CPV363MK IGBT SIP MODULE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated - 1 0|js @ 125°C, V ge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV363MK
360Vdc,
C-978
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-6.013A International [ml Rectifier HIGH VOLTAGE IR 2 TIO L MOS GATE DRIVER General Description Features The IR2110L is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary
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IR2110L
IR2110L
MO-Q36AB
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Untitled
Abstract: No abstract text available
Text: PD - 9.1672A International IS R Rectifier IRFZ34E HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling D escription Voss= 60V
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IRFZ34E
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Untitled
Abstract: No abstract text available
Text: STE D • 4055452 GDISSMM bflfl ■ INR P D -2 2 9 9 INTERNATIONAL RECTIFIER International [k 3r ]Rectifier 3 SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics 30CPQ150 Units Characteristics A VRRM 150 V ' fsm tp - 5|jssine
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30CPQ150
-55to175
O-247
D-185
T0747
30CPQ150
D-186
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RECTIFIER DIODE D135
Abstract: No abstract text available
Text: Bulletin 12085/A htemational S Rectifier sd 8ooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1200A • W id e current range ■ High voltag e ratings up to 4 5 0 0 V ■ High surge current capab ilities ■ Diffused junction ■ H ockey Puk version
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12085/A
DQ-200AB
D-141
4AS54S2
RECTIFIER DIODE D135
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Untitled
Abstract: No abstract text available
Text: P D 9 .1650 International I ö r Rectifier FA57SA50LC HEXFET Power MOSFET • • • • • • • • • Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Gate Charge Device
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FA57SA50LC
OT-227
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c918
Abstract: C918 diode C913
Text: International e?rRectifier P D -9.1125A IRGBC20KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-ioss rating includes all "tail" losses
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IRGBC20KD2-S
i002070
SMD-220
C-920
c918
C918 diode
C913
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PDF
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L3103L
Abstract: No abstract text available
Text: PD - 9.1617B International I R Rectifier IR F 33 15S /L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF3315S • Low-profile through-hole (IRF3315L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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1617B
IRF3315S)
IRF3315L)
4A55452
L3103L
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin 125161/B International troilRectifier ST280S s e r ie s PHASE CONTROL THYRISTORS Stud Version Features 280A • C e n te r a m p lify in g g a te ■ H e rm e tic m e ta l c a s e w ith g la s s -m e ta l s e a l in s u la to r ■ In te rn a tio n a l s ta n d a rd c a s e T O -2 0 9 A B T O -9 3
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125161/B
ST280S
66msL
DG27G57
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thyristor BT 161
Abstract: No abstract text available
Text: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability
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E78996
thyristor BT 161
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PDF
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