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    Hirose Electric Co Ltd DF14-8P-1.25H(65)

    CONN HEADER SMD R/A 8POS 1.25MM
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    DigiKey DF14-8P-1.25H(65) Bulk 792 1
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    Mouser Electronics DF14-8P-1.25H(65) 406
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    Mean Well GST60A48-P1J

    AC/DC DESKTOP ADAPTER 48V 60W
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    DigiKey GST60A48-P1J Box 155 1
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    Avnet Americas GST60A48-P1J Box 19 Weeks, 3 Days 1
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    RS GST60A48-P1J Bulk 25 9 Weeks 1
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    TME GST60A48-P1J 449 1
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    IBS Electronics GST60A48-P1J 1
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    Master Electronics GST60A48-P1J 53
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    Neutron USA GST60A48-P1J 50
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    Sager GST60A48-P1J 798 1
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    Sanyo-Denki Co Ltd 9GV1248P1J01

    FAN AXIAL 120X38MM 48VDC WIRE
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    DigiKey 9GV1248P1J01 Box 146 1
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    TME 9GV1248P1J01 31
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    Neutron USA 9GV1248P1J01 50
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    Sager 9GV1248P1J01 1
    • 1 $61.66
    • 10 $57.38
    • 100 $51.64
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    Sanyo-Denki Co Ltd 9GV0648P1H18

    FAN 48VDC 60X38MM TACH/PWM CONN
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    DigiKey 9GV0648P1H18 Box 90 1
    • 1 $25.59
    • 10 $22.5
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    Mean Well SGAS06U48-P1J

    PWR SUPP, BATT & COND
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    DigiKey SGAS06U48-P1J Bulk 65 1
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    Avnet Americas SGAS06U48-P1J Box 1
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    Neutron USA SGAS06U48-P1J 50
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    48P1 Datasheets Context Search

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    TC58NVG1S3ETA00

    Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
    Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111 PDF

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S PDF

    THGBM1G5D2EBAI7

    Abstract: THGBM1G8D8EBAI2 THGBM1G6D4EBAI4 THGBM1G4D1EBAI7 TH58NVG4S0DTG20 toshiba THGBM1G4D1EBAI7 TH58NVG4 toshiba TH58NVG5 THGBM1G THGBM
    Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2009-8 SCE0004I NAND Flash Memory SLC Small Block Capacity Part Number 512 Mbits TC58DVM92A3TA00 TC58DVM92A3BAJW TC58DVG02A3TA00 512 Mbits 1 Gbits Access Time Program/Erase Time typ.


    Original     		SCE0004I 48-P-1220-0 P-TFBGA63-0813-0 TC58DVM92A3TA00 TC58DVM92A3BAJW TC58DVG02A3TA00 THGBM1G5D2EBAI7 THGBM1G8D8EBAI2 THGBM1G6D4EBAI4 THGBM1G4D1EBAI7 TH58NVG4S0DTG20 toshiba THGBM1G4D1EBAI7 TH58NVG4 toshiba TH58NVG5 THGBM1G THGBM PDF

    TH58NVG4S0DTG20

    Abstract: THGBM1G5D2EBAI7 TH58NVG5S0DTG20 THGBM1G6D4EBAI4 TC58NVG3S0DTG00 THGBM1G4D1EBAI7 THGVS4G3D1EBAI8 THGBM1G8D8EBAI2 tc58nvg3 TH58NVG4
    Text: 東芝半導体製品総覧表 2009 年 7 月版 メモリ／ストレージデバイス NAND 型フラッシュメモリ 1 2009/7 SCJ0004N NAND 型フラッシュメモリ SLC 小ブロック 容量 512 Mbits 512 Mbits 1 Gbits 品 番 ページサイズ bit


    Original     		SCJ0004N TC58DVM92A3TA00 TC58DVM92A3BAJW TC58DVG02A3TA00 48-P-1220-0 P-TFBGA63-0813-0 TH58NVG4S0DTG20 THGBM1G5D2EBAI7 TH58NVG5S0DTG20 THGBM1G6D4EBAI4 TC58NVG3S0DTG00 THGBM1G4D1EBAI7 THGVS4G3D1EBAI8 THGBM1G8D8EBAI2 tc58nvg3 TH58NVG4 PDF

    A110

    Abstract: TC55W1600FT TC55W1600FT-55 48-P-1220-0
    Text: T O S H IB A TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55W1600FT-55 576-WORD 16-BIT/2 152-WORD TC55W1600FT 216-bit 48-P-1220-0 A110 PDF

    TC58DAM72A1FT00

    Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
    Text: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


    Original     		TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 128-MBIT 16BITS) TC58DxM72x1xxxx bytes/264 528-byte/264-words TC58DAM72A1FT00 TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X PDF

    MR27V1602E

    Abstract: MR27V1602EMA MR27V1602ETN MR27V1602ETP
    Text: PEDR27V1602E-01-01 1Semiconductor MR27V1602E This version : Dec. 1999 Previous version: - Preliminary 1,048,576–Word x 16–Bit or 2,097,152–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V1602E is a 16 Mbit electrically Programmable Read-Only Memory that can be electrically switched


    Original     		PEDR27V1602E-01-01 MR27V1602E MR27V1602E 576-word 16-bit 152-word MR27V1602EMA MR27V1602ETN MR27V1602ETP PDF

    MR27T802F

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MR27T1602L

    Abstract: A13 MARKING CODE
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		FEDR27T1602L-002-03 MR27T1602L 576-word 16-bit 152-word MR27T1602L-xxxMA 44-pin OP44-P-600-1 MR27T1602L-xxxTN 48-pin MR27T1602L A13 MARKING CODE PDF

    DIP42-P-600-2

    Abstract: MR27V1652E
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MR27V802F

    Abstract: MR27V802FMA MR27V802FTN MR27V802FTP
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MR27V1652L

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MR27V3202F

    Abstract: MR27V3202FMA MR27V3202FTN MR27V3202FTP
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		MR27V3202F FEDR27V3202F-01-04 MR27V3202F 152-word 16-bit 304-word 16-bit/4 MR27V3202FMA MR27V3202FTN MR27V3202FTP PDF

    TSOP 173 g

    Abstract: MR27V1602E
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		MR27V1602E FEDR27V1602E-02-03 MR27V1602E 576-word 16-bit 152-word 16-bit/2 TSOP 173 g PDF

    MR27T3202F

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		FEDR27T3202F-02-04 MR27T3202F 152-word 16-bit 304-word MR27T3202F-xxxMA 44-pin OP44-P-600-1 MR27T3202F-xxxTP MR27T3202F PDF

    MR27T3202L

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		FEDR27T3202L-002-04 MR27T3202L 152-word 16-bit 304-word MR27T3202L-xxxMA 44-pin OP44-P-600-1 MR27T3202L-xxxTN 48-pin MR27T3202L PDF

    MR27V802F

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MR27V3252J

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		FEDR27V3252J-002-02 MR27V3252J 152-word 16-bit 304-word 16-word MR27ystem MR27V3252J PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX1 6827FT LOW -VOLTAGE 20-BIT BUS BUFFER W ITH 3.6 V TOLERANT INPUTS A N D OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt


    OCR Scan     		TC74VCX16827FT TC74VCX1 6827FT 20-BIT TC74VCX16827FT 20-bit 10-bit 10-bit TSSOP56-P-0061-0 PDF

    TC58128FT

    Abstract: TC58128FTI TOSHIBA cmos memory -NAND
    Text: TOSHIBA TC58128FTI TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 1024 blocks.


    OCR Scan     		TC58128FTI 128-MBIT TC58128 528-byte 48-P-1220-0 TC58128FT TC58128FTI TOSHIBA cmos memory -NAND PDF

    TH58512FT

    Abstract: No abstract text available
    Text: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 512-MBIT 64M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.


    OCR Scan     		TH58512FT 512-MBIT TH58512 528-byte 48-P-1220-0 TH58512FT PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V400AFT/ATR-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V400AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 262,144 words


    OCR Scan     		TC55V400AFT/ATR-55 144-WORD 16-BIT TC55V400AFT/ATR 304-bit 48-P-1214-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC55W1600FT-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55W1600FT-55 TC55W1600FT 216-bit 48-P-1220-0 TC55W1600FT-55f-70 PDF

    MR27T3202L

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF