Untitled
Abstract: No abstract text available
Text: JEITA Package Code P-TFBGA48-7.5x8.5-0.75 RENESAS Code PTBG0048HB-A Previous Code 48FHH MASS[Typ.] 0.1g w S B b D w S A S AB A A A1 ZD e e H G F E E D C B B ZE y S A x4 1 v Index mark Index mark Laser mark S 2 3 4 5 6 Reference Symbol D E v w A A1 e b x
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P-TFBGA48-7
PTBG0048HB-A
48FHH
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Untitled
Abstract: No abstract text available
Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV0816ABG
16bit)
REJ03C0393-0100
288-words
16-bit,
48balls
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ic tlp 759
Abstract: SL-BC050515TJ-1 JHB-TQ121214-M L196-49 L196-65A PTB54C SL-BG060615TJ-2 SL-BG060615TJ-1 ST-TQ070710TJ-1 PVQN0020KB-A
Text: Unit:mm The pin1 is located in the hatching portion Note : Numbers in parentheses are the numbers of Ics contained in five trays per inner box, and those without parentheses are the numbers of Ics contained in eight or nine trays per inner box.
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PVQN0020KB-A
PVQN0052KA-A
PVQN0064LB-A
PVQN0032KA-A
PVQN0032KB-A
PVQN0068KA-A
PVQN0048KA-A
PVQN0052LE-A
PVQN0036KA-A
JHB-PBG3131173
ic tlp 759
SL-BC050515TJ-1
JHB-TQ121214-M
L196-49
L196-65A
PTB54C
SL-BG060615TJ-2
SL-BG060615TJ-1
ST-TQ070710TJ-1
PVQN0020KB-A
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R1LV0416DSB5si
Abstract: R1LV0416DSB-5SI
Text: R1LV0416D Series 4M SRAM 256-kword x 16-bit REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
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R1LV0416D
256-kword
16-bit)
REJ03C0311-0100
16-bit,
R1LV0416DSB5si
R1LV0416DSB-5SI
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R1LV0416DSB
Abstract: No abstract text available
Text: R1LV0416D Series 4M SRAM 256-kword x 16-bit REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
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R1LV0416D
256-kword
16-bit)
REJ03C0311-0100
16-bit,
R1LV0416DSB
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TE1612
Abstract: PTSP0016JB-A MTE1612H-QFP PVQN0056KA-A PRSP0010DB-A PRSP0014DD-A PRSP0016DE-A PRSP0024GA-A PVQN0052LA-A PLQP0032GB-A
Text: Standard Orientation of Package The pin 1 is located in the hatching portion. Reel off direction The pin 1 may also be located in the following portion for reverse bent packages and some QFPs. Reel off direction ReelType TYPE A TYPE B A 254 330 N 100 100
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16-mm
MTE1612G-14P2N
MTE1612H-10P2N
MTE1612H-16P2E-A
MTE1612H-24P2E-A
MTE1612H-48F7Q
MTE1612H-48PFW-A
MTE1612H-52PJV-A
MTE1612H-100F0M
MTE1612H-QFP
TE1612
PTSP0016JB-A
PVQN0056KA-A
PRSP0010DB-A
PRSP0014DD-A
PRSP0016DE-A
PRSP0024GA-A
PVQN0052LA-A
PLQP0032GB-A
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Untitled
Abstract: No abstract text available
Text: R1LV0416CBG-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0259-0100 Rev.1.00 Jun.17.2005 Description The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor
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R1LV0416CBG-I
256-kword
16-bit)
REJ03C0259-0100
16-bit.
R1LV0416C-I
48-pin
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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R1LV0416DBG-5SI
Abstract: PTSB0044GA-A R1LV0416D R1LV0416DBG-7LI R1LV0416DSB-5SI R1LV0416DSB-7LI
Text: R1LV0416D Series 4M SRAM 256-kword x 16-bit REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
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R1LV0416D
256-kword
16-bit)
REJ03C0311-0100
16-bit,
R1LV0416DBG-5SI
PTSB0044GA-A
R1LV0416DBG-7LI
R1LV0416DSB-5SI
R1LV0416DSB-7LI
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R1LV0416DSB-5SI
Abstract: PTSB0044GA-A R1LV0416D R1LV0416DBG-5SI R1LV0416DBG-7LI R1LV0416DSB-7LI r1lv0416 R1LV0416DSB
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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R1LV0416CBG-5SI
Abstract: R1LV0416CBG-7LI R1LV0416CBG-I R1LV0416C-I
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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R1LV0416CBG-5SI
Abstract: R1LV0416CBG-7LI R1LV0416CBG-I R1LV0416C-I
Text: R1LV0416CBG-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0259-0100 Rev.1.00 Jun.17.2005 Description The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor
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R1LV0416CBG-I
256-kword
16-bit)
REJ03C0259-0100
16-bit.
R1LV0416C-I
48-pin
R1LV0416CBG-5SI
R1LV0416CBG-7LI
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r1lv0416c
Abstract: R1LV0416CBG-5SI R1LV0416CBG-7LI R1LV0416CBG-I R1LV0416C-I
Text: R1LV0416CBG-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0259-0001 Preliminary Rev.0.01 Jan.11.2005 Description The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor
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R1LV0416CBG-I
256-kword
16-bit)
REJ03C0259-0001
16-bit.
R1LV0416C-I
48-pin
r1lv0416c
R1LV0416CBG-5SI
R1LV0416CBG-7LI
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Untitled
Abstract: No abstract text available
Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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Original
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PDF
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R1LV0816ABG
16bit)
REJ03C0393-0100
288-words
16-bit,
48balls
|
Untitled
Abstract: No abstract text available
Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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Original
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PDF
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R1LV0816ABG
16bit)
REJ03C0393-0100
288-words
16-bit,
48balls
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