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    4891 TRANSISTOR Search Results

    4891 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    4891 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MU4893

    Abstract: MU4894 MU4891 MU4892 EB20 unijunction application note 100-C
    Text: MU4891 silicon thru MU4894 SILICON A N N U LA R PLASTIC U N IJU N C TIO N TRANSISTORS PN UNIJUNCTION TRANSISTORS . . . designed for military and industrial use in pulse, timing, triggering, sensing, and oscillator circuits. The annular process provides low leakage current, fast switching and low peak-point


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    MU4891 MU4894 MU4893 MU4892 MU4893 MU4894 MU4891 MU4892 EB20 unijunction application note 100-C PDF

    4018 datasheet

    Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
    Text: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTP2041F -500mV ZXTN2040F ZXTP2041FTA ZXTP2041FTC D-81541 4018 datasheet ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA marking 312 SOT23 zetex PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC D-81541 PDF

    TS16949

    Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 PDF

    complementary npn-pnp power transistors

    Abstract: sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors
    Text: A Product Line of Diodes Incorporated ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 40 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


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    ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors PDF

    DIODES 11W

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve


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    ZXTC2063E6 OT23-6, OT23-6 ZXTC20: D-81541 DIODES 11W PDF

    TS16949

    Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
    Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


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    ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA D-81541 A1103-04, TS16949 ZXTP03200BG ZXTP03200BGTA marking sot223 GY PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


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    ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA ZXTP03200BG A1103-04, 522-ZXTP03200BGTA ZXTP03200BGTA PDF

    PNP 200V 2A SOT89

    Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
    Text: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


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    ZXTP03200BZ -200V -160mV ZXTP03200BZTA D-81541 A1103-04, PNP 200V 2A SOT89 TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


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    ZXTP03200BG OT223 -200V -160mV OT223 D-81541 A1103-04, PDF

    3554M

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


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    ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 3554M PDF

    4891 TRANSISTOR

    Abstract: transistor MOSFET 924 ON 4892 mosfet p60n
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 60 N 06 H D HDTMOS E-FET ™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOSPOWER FET 60 AMPERES 60 VOLTS RDS on = 0014 OHM This advanced h ig h -c e ll density HDTMOS power FET is


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    MTP60N06HD 4891 TRANSISTOR transistor MOSFET 924 ON 4892 mosfet p60n PDF

    401745

    Abstract: cel 9200 CY7C1019BV33 CY7C1021BV33 8361H 84 FBGA thermal
    Text: Cypress Semiconductor Product Qualification Report QTP# 000505 VERSION 2.0 November, 2000 1 Meg Fast Asynchronous SRAM R52FD-3 Technology, Fab 4 CY7C1021BV33 CY7C1019BV33 64K x 16 Static RAM 128K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


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    R52FD-3 CY7C1021BV33 CY7C1019BV33 CY7C1021BV33, N5V18-BAI CY62145V18-BAI 401745 cel 9200 CY7C1019BV33 CY7C1021BV33 8361H 84 FBGA thermal PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXLD381EV1 USER GUIDE Description The ZXLD381 is a single or multi cell LED driver designed for applications requiring step-up voltage conversion from a very low input voltage and on/off enable control. The IC generates constant current pulses that are ideal for driving


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    ZXLD381EV1 ZXLD381 OT23-3 D-81541 A1103-04, PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXCT1032EV1 USER GUIDE Figure 1 Evaluation board components' layout DESCRIPTION The ZXCT1032EV1 provides a very convenient means for evaluating the capabilities of the ZXCT1032 current monitor. The ZXCT1032 is a high-side current monitor that drives a PMOS or PNP transistor to provide in-rush


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    ZXCT1032EV1 ZXCT1032 ZXCT1032lanstraà D-81541 A1103-04, PDF

    A88L

    Abstract: WSR3R0500FEA
    Text: Designed and produced by Diodes Zetex Applications team, Oldham, UK ZXLD1370EV3 EVALUATION BOARD USER GUIDE 9 AMP HIGH CURRENT BUCK LED DRIVER APPLICATION Fig. 1 ZXLD1370EV3 Evaluation board connection diagram Issue 1 – February 2011 Diodes Incorporated, 2011


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    ZXLD1370EV3 ZXLD1370EV3 TSSOP16L ZXLD1370 DMN3020LK3 co154 D-81541 A1103-04, A88L WSR3R0500FEA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXLD1374EV1 BUCK LED DRIVER USER GUIDE 0-1.5A DC DVM GND 8-48V 2A DC PSU 1 - 15 LEDs 1.5A 4.5V 0 – 4.5V Status steps 0V Open Drain output 2.5V = 200% 125mV = 10% -t° Thermal connection Fig. 1 ZXLD1374EV1 Evaluation board connection diagram Issue 1 – September 2010


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    ZXLD1374EV1 125mV ZXLD1374EV1 TSSOP20L- DFN3030 ZXLD1374 SBR3U100LP PDF

    GD 241 C

    Abstract: No abstract text available
    Text: ZXLD1370EV1 BUCK LED DRIVER USER GUIDE 0-1.5A DC DVM GND 8-48V 2A DC PSU 1 - 15 LEDs 1.5A 4.5V 0 – 4.5V Status steps 0V Open Drain output 2.5V = 200% 125mV = 10% -t° Thermal connection Fig. 1 ZXLD1370EV1 Evaluation board connection diagram Issue 2 – Sept 2010


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    ZXLD1370EV1 125mV D-81541 A1103-04, GD 241 C PDF

    Untitled

    Abstract: No abstract text available
    Text: 14-18 series-connected LEDs AL9910EV4 BUCK LED DRIVER USER GUIDE Fig. 1 AL9910EV4 Evaluation board connection diagram Issue 4 – June 2011 Diodes Incorporated, 2011 www.diodes.com AL9910EV4 DESCRIPTION The AL9910EV4 is an offline non-isolated LED driver Evaluaton board designed to work on both 115V and


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    AL9910EV4 AL9910EV4 between14 180mA. 180mA D-81541 PDF

    led 230v application

    Abstract: No abstract text available
    Text: AL9910EV5 BUCK LED DRIVER USER GUIDE Fig. 1 AL9910EV5 evaluation board connection diagram Issue 3 – June 2011 Diodes Incorporated, 2011 www.diodes.com AL9910EV5 DESCRIPTION The AL9910EV5 is an offline non-isolated LED driver Evaluation board designed to work on both 115V and


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    AL9910EV5 AL9910EV5 240mA. 240mA A1103-04, D-81541 led 230v application PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXSC400EV5 USER GUIDE DESCRIPTION The ZXSC400 is a voltage mode boost converter in a SOT23-6 package. The low feedback voltage VFB input allows the current in a chain of LEDs to be set accurately. The ZXSC400EV5 is designed to drive one or two 3W LEDs at a constant


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    ZXSC400EV5 ZXSC400 OT23-6 700mA A1103-04, D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXSC310EV5 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXSC310 is a single or multi cell The ZXSC310EV5 is configured as a LED driver in an SOT23-5 package. The buck-boost converter to drive a 1W LED use of an external switching BJT or from 3 NiCd/NiMH or Alkaline batteries.


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    ZXSC310EV5 ZXSC310 OT23-5 350mA ZXSC310EV5 D-81541 A1103-04, PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXSC400EV7 USER GUIDE DESCRIPTION The ZXSC400 is a voltage mode boost converter in a SOT23-6 package. The low feedback voltage VFB input allows the current in a chain of LEDs to be set accurately. The ZXSC400EV7 is designed to drive one or two 3W LEDs at a constant


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    ZXSC400EV7 ZXSC400 OT23-6 700mA A1103-04, D-81541 PDF