m19500483
Abstract: 483-03 483-01
Text: 483-01 – 483-04 Available Qualified Level: JANTX 3 Phase 25 Amp Rectifier Bridge Qualified per MIL-PRF-19500/483 DESCRIPTION This series of high-current three-phase bridge rectifiers are constructed with hermetically sealed rectifiers built with the same design and construction techniques used in military
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MIL-PRF-19500/483
MIL-PRF-19500/483,
RF01118,
m19500483
483-03
483-01
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483-01
Abstract: No abstract text available
Text: 483-01, 483-02, and 483-03 THREE PHASE 25 AMP RECTIFIER BRIDGES SCOTTSDALE DIVISION APPEARAN CE This series of high-current three-phase bridge rectifiers are constructed with hermetically sealed rectifiers with the same design and construction as used in military applications for the utmost in reliability. They can also be optionally obtained
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MIL-PRF-19500/483
483-01
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483-01
Abstract: No abstract text available
Text: 483-01, 483-02, and 483-03 THREE PHASE 25 AMP RECTIFIER BRIDGES SCOTTSDALE DIVISION APPEARANCE This series of high-current three-phase bridge rectifiers are constructed with hermetically sealed rectifiers with the same design and construction as used in military applications for the utmost in reliability. They can also be optionally obtained
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MIL-PRF-19500/483
483-01
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Untitled
Abstract: No abstract text available
Text: M19500/483-01 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-01
Current25
Voltage200
Current200u
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Untitled
Abstract: No abstract text available
Text: M19500/483-02 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-02
Current25
Voltage400
Current200u
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E7800
Abstract: GET06625 Q62702-Q1745 marking code diode 04 to-18
Text: 2.7 Chip position ø4.3 ø4.1 14.5 12.5 1 1.1 .9 2.54 mm spacing ø0.45 SFH 464 1 0.9 .1 GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) ø5.5 ø5.2 3.6 3.0 GET06625 fet06625 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g
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GET06625
fet06625
OHR01461
OHR01457
E7800
GET06625
Q62702-Q1745
marking code diode 04 to-18
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Untitled
Abstract: No abstract text available
Text: M19500/483-03 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-03
Current25
Voltage600
Current200u
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Untitled
Abstract: No abstract text available
Text: M19500/483-03+JANTX Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelY I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-03
Current25
Voltage600
Current200u
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Untitled
Abstract: No abstract text available
Text: M19500/483-01+JAN Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelY I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-01
Current25
Voltage200
Current200u
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PDF
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Untitled
Abstract: No abstract text available
Text: M19500/483-01+JANTX Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelY I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-01
Current25
Voltage200
Current200u
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Untitled
Abstract: No abstract text available
Text: M19500/483-02+JAN Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelY I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-02
Current25
Voltage400
Current200u
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M19500/483-03 JAN
Abstract: No abstract text available
Text: M19500/483-03+JAN Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelY I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-03
Current25
Voltage600
Current200u
M19500/483-03 JAN
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Untitled
Abstract: No abstract text available
Text: M19500/483-02+JANTX Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelY I O Max.(A) Output Current25 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)39
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M19500/483-02
Current25
Voltage400
Current200u
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led 3mm red
Abstract: led 3mm red long leads 3mm led green red red LED 3mm 3MM LED RED L-483SRSGW LED L-483GDT Green LED 3mm L-483 L-483E
Text: T-1 3mm CYLINDRICAL LED LAMPS Kingbright L-483 BRIGHT RED L-483G GREEN L-483I HIGH EFFICIENCY RED L-483Y YELLOW L-483E ORANGE L-483SRSG SUPER BRIGHT RED / SUPER BRIGHT GREEN Package Dimensions Features lCYLINDRICAL TYPE, TOP DIFFUSED. lLOW POWER CONSUMPTION.
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L-483
L-483G
L-483I
L-483Y
L-483E
L-483SRSG
2-L483
L-483HDT
L-483IDT
led 3mm red
led 3mm red long leads
3mm led green red
red LED 3mm
3MM LED RED
L-483SRSGW
LED L-483GDT
Green LED 3mm
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2SK2738
Abstract: Silicon N Channel MOS FET High Speed Power Switching Hitachi DSA00338
Text: 2SK2738 Silicon N Channel MOS FET High Speed Power Switching ADE-208-483 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2738 Absolute Maximum Ratings Ta = 25°C
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2SK2738
ADE-208-483
2SK2738
Silicon N Channel MOS FET High Speed Power Switching
Hitachi DSA00338
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2738 Silicon N Channel MOS FET High Speed Power Switching ADE-208-483 Z 1st. Edition Jun 1997 Features • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2
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2SK2738
ADE-208-483
220CFM
D-85622
Hitachi DSA00276
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NCP1400ASN33T1
Abstract: 27T1 NCP1400A A114 JESD22 NCP1400ASN19T1 NCP1400ASN25T1 NCP1400ASN27T1 NCP1400ASN30T1 NCP1400ASN50T1
Text: NCP1400A Micropower Fixed Frequency PWM Step-Up DC-DC Converter Features http://onsemi.com 5 1 THIN SOT–23–5 SN SUFFIX CASE 483 PIN CONNECTIONS AND MARKING DIAGRAM CE 1 OUT 2 NC 3 • Extremely Low Start–Up Voltage of 0.8 V • Operation Down to Less than 0.2 V
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NCP1400A
r14525
NCP1400A/D
NCP1400ASN33T1
27T1
NCP1400A
A114
JESD22
NCP1400ASN19T1
NCP1400ASN25T1
NCP1400ASN27T1
NCP1400ASN30T1
NCP1400ASN50T1
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UNITRODE 483-3
Abstract: JANTX 100-C unitrode 686 4 unitrode 686 4833
Text: RECTIFIER ASSEMBLIES Three Phase Bridges, 25 Amp, Military Approved JANTX 483-1 JANTX 483-2 JANTX 483-3 D ESC R IP T IO N This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type screening tests. This series of bridges of
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MIL-S-19500/483
100-C
UNITRODE 483-3
JANTX
100-C
unitrode 686 4
unitrode 686
4833
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kd 617
Abstract: No abstract text available
Text: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type
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MIL-S-19500/483
kd 617
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jantx diodes
Abstract: 4833
Text: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type
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MIL-S-19500/483
jantx diodes
4833
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/ lilATERTOUN SDE D RECTIFIER ASSEMBLIES • Dai22bl 2flb ■ U N I T JANTX 483-1 Three Phase Bridges, 25 Amp, M ilitary Approved jantx 483-3 DESCRIPTION This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type
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Dai22bl
MIL-S-19500/483
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PDF
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Analog Voice scrambler
Abstract: TDA7050 transistor 835 TRANSISTOR regulator PCF2104 transistor 458 AUDIO Amplifier with transistor BC548 Philips Semiconductors Selection Guide BSN10A 2n5551 128
Text: Philips Semiconductors Functional index Selection guide PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 Multistandard programmable analog CMOS transmission IC 110 TEA1060; TEA1061 Versatile telephone transmission circuits with dialler interfac 483 TEA1062; TEA1062A
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PCA1070
TEA1060;
TEA1061
TEA1062;
TEA1062A
TEA1064A
TEA1064B
TEA1065
TEA1066T
TEA1067
Analog Voice scrambler
TDA7050
transistor 835
TRANSISTOR regulator
PCF2104
transistor 458
AUDIO Amplifier with transistor BC548
Philips Semiconductors Selection Guide
BSN10A
2n5551 128
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GL830
Abstract: LDM146P 67013 Imatronic ldl175 LDM115P LDM145P
Text: ¡AAATRONiC MediBrite Compact Series LDM145/670 Famell 280-471 & 280-483 The MediBrite Miniature laser is a self-contained OEM laser diode module emitting a wavelength of 670nin It is of medium visibility and can be seen in moderately bright background lighting conditions.
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LDM145/670
670nm
LDM145G/670
G/670/x
LDM146P
LDL175/670/X
LDM122P/780/X
LDM115P
G/780/x1
GL830
67013
Imatronic
ldl175
LDM145P
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em 483
Abstract: No abstract text available
Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS I .190 483 . DESCRIPTION Th e Q E D 42X is an 880nm AIGaAs LED en capsulated in a clear, purple tinted, plastic T O -4 6 package. REFERENCE, SURFACE II FEATURES Tight production E„ distribution.
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QED422/423
880nm
74bbflSl
em 483
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