482 TRANSISTOR Search Results

482 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

482 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DTB114TK Abstract: DTDG23YP Text: Transistors DTB114TK DTDG23YP 96-294-B114T (96-378-DS23YP) 482	Original	DTB114TK DTDG23YP 96-294-B114T) 96-378-DS23YP) DTB114TK DTDG23YP	PDF
ELTEC INSTRUMENTS Abstract: CH-8712 staefa CH-8712 Pyroelectric Detectors Text: Model 482 High Gain Thermally Compensated Pyroelectric IR Detector Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 482 consists of two lithium tantalate sensing elements, a load	Original	CH-8712 ELTEC INSTRUMENTS staefa CH-8712 Pyroelectric Detectors	PDF
482 transistor Abstract: Q62702-F1573 GMA marking Text: BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	900MHz OT-363 Q62702-F1573 Dec-16-1996 482 transistor Q62702-F1573 GMA marking	PDF
2N4403 626 Abstract: 2n4401- 312 MPSa13 549 2N5087 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S Text: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273	OCR Scan	2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 2SC1645S 2SC1740S 2N4403 626 2n4401- 312 MPSa13 549 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S	PDF
482 transistor Abstract: transistor f 482 Text: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz Q62702-F1573 OT-363 482 transistor transistor f 482	PDF
DTB114T Abstract: No abstract text available Text: Transistors DTB114TK DTDG23YP 96-294-B114T (96-378-DS23YP) 482 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the	Original	DTB114TK DTDG23YP 96-294-B114T) 96-378-DS23YP) DTB114T	PDF
SK 43 Abstract: SK482 Heatsinks sk 499 heatsinks SK495 A85A Text: A Strangkühlkörper für Einrast-Transistorhaltefeder Extruded heatsinks for lock-in retaining spring Dissipateurs extrudés pour ressort de retenue à encliqueter 10,3 K/W 35 7 6 5 12,5 4 SK 482 3 2 1 M3 25 37,5 50 75 84 100 1000 mm 25 8 50 100 150 200 mm	Original		PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. •fx = 8GHz F= 1.2dB at 900MHz • Two galvanic internal isolated R h Transistors in one package n n j n t t ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz OT-363 Q62702-F1573 S3Sb05 Q1S21Ã IS211 235b05 G1221Ã	PDF
VPS05604 Abstract: No abstract text available Text: BFS 482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5	Original	VPS05604 EHA07196 OT-363 Oct-12-1999 VPS05604	PDF
RF NPN POWER TRANSISTOR 2.5 GHZ Abstract: VPS05604 Text: BFS 482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5	Original	VPS05604 EHA07196 OT-363 Oct-12-1999 RF NPN POWER TRANSISTOR 2.5 GHZ VPS05604	PDF
Untitled Abstract: No abstract text available Text: ^. D a ta sh eet statu s P r o d u c t s p e c ific a tio n d a te o f issue A p ril 19 9 1 APX 1 53^31 0025 482 137 Philips Semiconductors BSP103/BSP105/BSP109 N-channel enhancement mode vertical D-MOS transistors N AMER PHIL IPS /DISCRETE QUICK REFERENCE DATA	OCR Scan	BSP103/BSP105/BSP109 OT223 OT223 BSP103 BSP105 BSP109 BSP10	PDF
b 514 transistor Abstract: 482 transistor Heatsinks sk 489 Heatsinks 514 transistor TO-247 transistor f 482 F 514 Heatsinks to-220 TO-218 datasheet Text: Hola1 H A Retaining springs for transistors art. no. THFU 1 transistor- suitable for spring force housing heatsinks [N] TO 218 TO 220 TO 3 P TO 247 TO 248 SK 480 SK 481 SK 482 SK 483 SK 487 SK 489 SK 490 SK 492 SK 495 SK 499 SK 512 SK 514 material H B C	Original		PDF
S7560 Abstract: Zener diode DW TP ignition module car ignition coil direct 6ba diode 6 volt pickup ignition Text: rZ 7 A T # S G S -T H O M S O N IL iO T « ! R L 482 HALL-EFFECT PICKUP IGNITION CONTROLLER • DIRECT DRIVING OF THE EXTERNAL PO WER DARLINGTON ■ COILCURREhiT CHARGING ANGLE DWELL CONTROL . COIL CURRENT PEAK VALUE LIMITATION ■ CONTINUOUS COIL CURREINTT PROTECTION	OCR Scan		PDF
Heatsinks sk 499 Abstract: Heatsinks sk 489 THFK 220 Text: clcktronik^ Retaining springs for transistors art. no. for su itable for transistor- heatsinks spring force [N] housing THFU 1 TO 218 TO 220 TO 247 TO 248 TO 3 P THFU 2 TO 218 TO 220 TO 247 TO 248 TO 3 P THFU 3 TO 218 TO 220 TO 247 TO 248 TO 3 P material:	OCR Scan	E2-15 Heatsinks sk 499 Heatsinks sk 489 THFK 220	PDF

BU25150X Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387	OCR Scan	BU505 BU505D BU505DF BU505F BU506 BU506D BU506DF BU506F BU508AF BU508AW BU25150X BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX	PDF
Untitled Abstract: No abstract text available Text: m Bt481 Bt482 Advance Information This document contains information on a product under development. The parametric information contains target parameters and is subject to change. Distinguishing Features Applications 85,75, and 50 MHz Operation Supports 8:8:8:8,24-bit True Color and VGA Overlay	OCR Scan	Bt481 Bt482 24-bit Bt471/475/476/477/478 Regis56 15x24 44-pin Bt482KPJ75	PDF
BT481 Abstract: BT481KPJ85 BT482KPJ85 bt478 BT482 TRANSISTOR sync 7580 targa BROOKTREE Bt475 bt471 DG4551 Text: B R O O K T R E E CORP SbE ]> • lb455*iS □DG4551 Ô7T H B R K T 's z - y i- m Preliminary Information This document contains information on new product. The parametric information, although not fully characterized, is the result of testing initial devices.	OCR Scan	DG4551 24-bit Bt471/475/476/477/478 T-52-33-43 16-bit 24-bit-per-Pixel Bt481/482 BT481 BT481KPJ85 BT482KPJ85 bt478 BT482 TRANSISTOR sync 7580 targa BROOKTREE Bt475 bt471 DG4551	PDF
BT481KPJ85 Abstract: lm317 cursor Text: Preliminary Information This document contains information on new product. The parametric information, although not fully characterized, is the result o f testing initial devices. Distinguishing Features 85 and 75 MHz Operation Supports 8:8:8:8, 24-bit True Color	OCR Scan	24-bit t471/475/476/477/478 16-bit 24-bit-per-Pixel Bt481/482 Bt481KPJ85 15x24 44-pin BT481KPJ85 lm317 cursor	PDF
transistor 123 DL Abstract: TRANSISTOR 8FB a406 transistor A7N transistor Text: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power	Original	AOL1444 AOL1444 DDD50% transistor 123 DL TRANSISTOR 8FB a406 transistor A7N transistor	PDF
Untitled Abstract: No abstract text available Text: Sensors EXAMPLES OF ASSEMBLIES APPLICATIONS: Surface temperature detection mainly for microwave ovens 20 [ 787] 275 + 5 10.827 ±.197] 31 +_’5 [1.220+ _ “ »1 Insulating tube vJir< Metal case Fig. 1 APPLICATIONS: Surface temperature detection mainly for prevention of overheating of power transistors	OCR Scan	551JE at200 4300K 104JC 26kfl 46kfi 3850K	PDF
2N4125 Abstract: 2N4126 2n4125 transistor Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o *= 2N4125:3 0 V 2N4126:25V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2N4125/4126 2N4125 2N4126 625mW 2N4126 TA-25t; 2n4125 transistor	PDF
BCW61A Abstract: MMBT5086 482 transistor marking 9900 Text: SAMSUNG SEMICONDUCTOR INC BCW61A 14E D \| 7^4140 0007512 b \| PNP EPITAXIAL SILICON TRANSISTOR r a - n GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C i I \| ! 1 ! • Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	71fa414S 0007E12 BCW61A OT-23 MMBT5086 482 transistor marking 9900	PDF
BFC505 Abstract: BFC520 BFT93 BFG520W BFE520 BFE505 BF547W BFG591 BFT92 transistor BFR92 Text: Philips Semiconductors RF Wideband Transistors Index Types added to the range since the last issue of Handbook SC14 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BF547 78 BFG198 278 BFQ136 460 BF547W 87 BFG403W 287	Original	BF547 BFG198 BFQ136 BF547W BFG403W BFQ149 BF689K BFG410W BFQ270 BF747 BFC505 BFC520 BFT93 BFG520W BFE520 BFE505 BF547W BFG591 BFT92 transistor BFR92	PDF
amplifier siemens sot-363 Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343 Text: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code	OCR Scan	OT-343 OT-143 fl235b05 amplifier siemens sot-363 BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343	PDF

482 TRANSISTOR Search Results

482 TRANSISTOR Result Highlights (5)

482 TRANSISTOR Datasheets Context Search

DTB114TK

ELTEC INSTRUMENTS

482 transistor

2N4403 626

482 transistor

DTB114T

SK 43

Untitled

VPS05604

RF NPN POWER TRANSISTOR 2.5 GHZ

Untitled

b 514 transistor

S7560

Heatsinks sk 499

BU25150X

Untitled

BT481

BT481KPJ85

transistor 123 DL

Untitled

2N4125

BCW61A

BFC505

amplifier siemens sot-363