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    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. 4816GSM-3 Asymmetric Dual N-channel Power MOSFET with Integrated Schottky Diode Simple Drive Requirement S1/D2 S1/D2 Ideal for DC-DC Converters CH-1 BV DSS 30V RDS ON 22mΩ ID BV DSS RDS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2


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    PDF AP4816GSM-3 AP4816GSM-3 AP4816 4816GSM