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    480NM DETECTION Search Results

    480NM DETECTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TLP5212 Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler) DESAT Detection, OCP, AMC, 5000 Vrms, SO16L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TLP5214A Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler) DESAT Detection, OCP, AMC, 5000 Vrms, SO16L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    480NM DETECTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    silicon photodiode array

    Abstract: PIN photodiode crosstalk PIN-Photodiode-Array 16 Photodiode-Array Photodiode-Array PIN photodiode A/W 850nm 480nm detection IR photodiode array Photodiode Array 2d Photodiode Array
    Text: SCA-MA256ESP Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-MA256ESP is a back-illuminated silicon Array Configuration photodiode array module for use in applications where peak sensitivity from 480nm to 800nm is required.


    Original     		PDF SCA-MA256ESP SCA-MA256ESP 480nm 800nm MIL-STD-883 SCA-MA256ES silicon photodiode array PIN photodiode crosstalk PIN-Photodiode-Array 16 Photodiode-Array Photodiode-Array PIN photodiode A/W 850nm 480nm detection IR photodiode array Photodiode Array 2d Photodiode Array

    Photodiode-Array

    Abstract: PIN-Photodiode-Array Photodiode Array 2d 16 Photodiode-Array SCA-CA512ES silicon photodiode array Silicon Photodiode Chip 480nm detection photodiode array PIN photodiode chip
    Text: SCA-CA512ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA512ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		PDF SCA-CA512ES SCA-CA512ES 480nm 800nm MIL-STD-883 Photodiode-Array PIN-Photodiode-Array Photodiode Array 2d 16 Photodiode-Array silicon photodiode array Silicon Photodiode Chip 480nm detection photodiode array PIN photodiode chip

    Photodiode Array 2d

    Abstract: PIN-Photodiode-Array with scintillator PIN-Photodiode-Array Photodiode-Array silicon photodiode array SCA-CA25ES 480nm detection PIN photodiode crosstalk
    Text: SCA-CA25ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA25ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		PDF SCA-CA25ES SCA-CA25ES 480nm 800nm MIL-STD-883 Photodiode Array 2d PIN-Photodiode-Array with scintillator PIN-Photodiode-Array Photodiode-Array silicon photodiode array 480nm detection PIN photodiode crosstalk

    Semicoa "PIN photodiode" "crosstalk"

    Abstract: 480nm detection Photodiode Array 2d
    Text: SCA-CA256ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA256ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		PDF SCA-CA256ES SCA-CA256ES 480nm 800nm MIL-STD-883 Semicoa "PIN photodiode" "crosstalk" 480nm detection Photodiode Array 2d

    SCA-CA64ES

    Abstract: PIN-Photodiode-Array photodiode array Photodiode Array 2d Photodiode-Array Semicoa "PIN photodiode" "crosstalk" PIN photodiode 850 nm scintillator
    Text: SCA-CA64ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA64ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		PDF SCA-CA64ES SCA-CA64ES 480nm 800nm MIL-STD-883 PIN-Photodiode-Array photodiode array Photodiode Array 2d Photodiode-Array Semicoa "PIN photodiode" "crosstalk" PIN photodiode 850 nm scintillator

    Photodiode Array 2d

    Abstract: 16 Photodiode-Array Photodiode-Array PIN photodiode 850nm PIN-Photodiode-Array with scintillator PIN photodiode chip 850nm photodiode 850nm nep Semicoa "PIN photodiode" "crosstalk"
    Text: SCA-CA256ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA256ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		PDF SCA-CA256ES SCA-CA256ES 480nm 800nm MIL-STD-883 Photodiode Array 2d 16 Photodiode-Array Photodiode-Array PIN photodiode 850nm PIN-Photodiode-Array with scintillator PIN photodiode chip 850nm photodiode 850nm nep Semicoa "PIN photodiode" "crosstalk"

    SM980

    Abstract: No abstract text available
    Text: Products & Services 2015 FIBERCORE FIBERCORE Contents SECTION SECTION PAGE 1 About Fibercore Which fiber for which application? 6 - 11 2 SM Fiber for Harsh Environments, Ultra Bend Insensitive, RGB and Near Infra Red SM Fiber For Visible RGB Through To Near IR


    Original     		PDF 10685-B SM980

    S2662-01

    Abstract: S3204-03 L627 S3590-03 S1790
    Text: Large-Area PIN Silicon Photodiodes FEATURES Silicon photodiodes are promising devices for scintillation detec­ • Large active area: 10 X 10 mm, 10 X 20 mm, 30 X 30mm, etc. • High quantum efficiency • Low dark current • Low bias voltage operation • Sensitivity matching with BGO scintillators


    OCR Scan     		PDF

    200mvr

    Abstract: No abstract text available
    Text: HA-2547 fji HARRIS S E M I C O N D U C T O R Wideband Two Quadrant Analog Multiplier March 1993 Features Description • Low Multiplication E rro r. 1.6% • Input Bias


    OCR Scan     		PDF HA-2547 HA-2547 100MHz 22MHz -50dB) 200mvr

    Horizontal Transistor TT 2246

    Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
    Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz


    OCR Scan     		PDF HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601