MIL-STD-202 METHOD 301
Abstract: MIL-STD-1344, Method 3001
Text: _! CONTECH RESEARCH, INC, -~ -iiv - - - - - MAY 16, 1389 TEST REPORT ii89189 VERIFICATION TESTISG PART NUMBER: SS-120-T-2N SPECIFICATION: AJCO88 SAMTEC CORPORATICN 67 MECHANIC STREET AITLEBORO, MASSACHUSEllS 02703 SO8/ 226-4800 MAY 16, 1989 TEST REPORT #89189
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ii89189
SS-120-T-2N
AJCO88
MOO88
an500
97OOFS8892)
i330AccLlracv
MIL-STD-202 METHOD 301
MIL-STD-1344, Method 3001
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Untitled
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Phillip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES REPORTS SECOND QUARTER RESULTS Westlake Village, California — July 26, 1996 — Diodes Incorporated (ASE: DIO)
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ir active bandpass filter circuit diagram
Abstract: ir preamplifier
Text: U 2537 B TELEFUNKEN Semiconductors IR Preamplifier Technology: Bipolar Case: SO8 Features: D Few external components D Low power consumption D Microcomputer compatible D Insensitive to ambient light, also in the case of continuous interference sources D output polarity programmable
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D-74025
ir active bandpass filter circuit diagram
ir preamplifier
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ir active bandpass filter circuit diagram
Abstract: ir preamplifier AC ENERGY SAVING CIRCUIT DIAGRAM II-07 active bandpass filter 300 khz
Text: U 2537 B TELEFUNKEN Semiconductors IR Preamplifier Technology: Bipolar Case: SO8 Features: D Few external components D Low power consumption D Microcomputer compatible D Insensitive to ambient light, also in the case of continuous interference sources D output polarity programmable
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D-74025
ir active bandpass filter circuit diagram
ir preamplifier
AC ENERGY SAVING CIRCUIT DIAGRAM
II-07
active bandpass filter 300 khz
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OM4031T
Abstract: UAA2080 UAA2080H UAA2082 FSK receiver philips Pager receiver philips
Text: INTEGRATED CIRCUITS DATA SHEET OM4031T Digital post-detection filter for FSK data receivers Preliminary specification File under Integrated Circuits, IC03 Philips Semiconductors October 1994 Philips Semiconductors Preliminary specification Digital post-detection filter
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OM4031T
OM4031T
SCD35
UAA2080
UAA2080H
UAA2082
FSK receiver philips
Pager receiver philips
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ao4800
Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
Text: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck
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AO4800
AO4800
AO4800L
AO4800L
PD-00223
4800 so-8
aos Lot Code Week
4800 SO8
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Untitled
Abstract: No abstract text available
Text: Preliminary Specifications Low Cost SMT Low Pass Filter DC - 2000 MHz FLO7-0002-G V1.00 Features ● ● ● ● ● ● SO-8 Small Size and Low Profile Industry Standard SOIC-8 SMT Plastic Package Superior Repeatability Typical Insertion Loss 0.5 dB Typical Rejection 20 dB
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FLO7-0002-G
FLO7-0002-G
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7F MARKING
Abstract: APM4800 J-STD-020A ANPEC
Text: APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 • 30V/8A , RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged S 1 8 D S 2 7 D S 3 6
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APM4800
7F MARKING
APM4800
J-STD-020A
ANPEC
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Untitled
Abstract: No abstract text available
Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS
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IRL6283MTRPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS
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IRL6283MTRPbF
J-STD-020Dâ
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Abstract: No abstract text available
Text: PD - 96332B IRF9395MPbF IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application
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96332B
IRF9395MPbF
IRF9395MTRPbF
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Untitled
Abstract: No abstract text available
Text: IRL6297SDPbF DirectFET Dual N-Channel Power MOSFET Typical values unless otherwise specified Applications l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application VDSS Environmentaly Friendly Product
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IRL6297SDPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: IRF9383MPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
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IRF9383MPbF
315nC
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Untitled
Abstract: No abstract text available
Text: IRF9383MPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
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IRF9383MPbF
315nC
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irf9395
Abstract: No abstract text available
Text: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application
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6332A
IRF9395MPbF
IRF9395MTRPbF
irf9395
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Untitled
Abstract: No abstract text available
Text: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)
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IRF9383MPbF
IRF9383MTRPbF
315nC
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified
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IRL6283MTRPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits
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IRF9395MTRPbF
JESD47Fâ
J-STD-020Dâ
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IRF938
Abstract: IRF9383 IRF9383MTR1PBF 20V P-Channel Power MOSFET 500A irf93
Text: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)
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IRF9383MPbF
IRF9383MTRPbF
315nC
IRF938
IRF9383
IRF9383MTR1PBF
20V P-Channel Power MOSFET 500A
irf93
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irf9395
Abstract: IRF9395M IRF9395MTR1PBF IRF9395MTRPBF
Text: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application
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6332A
IRF9395MPbF
IRF9395MTRPbF
irf9395
IRF9395M
IRF9395MTR1PBF
IRF9395MTRPBF
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Untitled
Abstract: No abstract text available
Text: IRF9395MPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits
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IRF9395MPbF
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MAAMSS0048
Abstract: MAAL-007306 MAAMSS0017 PQFN-16 wimax components MAAP-003438-010PP0 MASWSS0006 MASW-007107 cpe wimax MAFR-000121-5D4S1T
Text: WiMAX broc_Feb08_singles_r2.qxd 3/18/08 3:13 PM Page 1 M/A-COM WiMAX components for next generation wireless February 2008 WiMAX broc_Feb08_singles_r2.qxd 3/18/08 3:13 PM Page 2 M/A-COM WiMAX Mobile and Customer Premises Equipment CPE WiMAX Mobile The newly ratified IEEE 802.16e standard allows manufacturers to begin introducing
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Feb08
MAAMSS0048
MAAL-007306
MAAMSS0017
PQFN-16
wimax components
MAAP-003438-010PP0
MASWSS0006
MASW-007107
cpe wimax
MAFR-000121-5D4S1T
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4800
Abstract: MARKING SO8
Text: ALPHA & OMEGA SEMICONDUCTOR Document No. PD-00223 Version E Title SO-8 PACKAGE MARKING DESCRIPTION DJI Ôf> 4800 FAYWLT O Green product NOTE: LOGO 4800 F A Y W L&T - AOS Logo - Part number code - Fab code - Assembly location code - Year code - Week code - Assembly lot code
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PD-00223
A04800
A04800L
4800
MARKING SO8
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T7525EC
Abstract: b562* Transistor Transistor BFT 98 LL4148F smd transistor SA4 transistor SMD PB01 A1s smd TRANSISTOR npo 121 j kck TGS 816 DSP16A
Text: A T & T flELEC I C b>4E » • Q05QQ2b GQGcm3G 4 b l MATTc! * Data Sheet February 1993 A lsr Microelectronics AT&T V32x-V42D V.32bis/FAX/V.42bis DeskTop Complete Modem Chip Sets Introduction The AT&T DeskTop Complete Modem Chip Set enables the modem designer to build a high-speed,
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GGS002b
V32X-V42D
32bis/FAX/V
42bis
68-Pin
005002b
84-Pin
T7525EC
b562* Transistor
Transistor BFT 98
LL4148F
smd transistor SA4
transistor SMD PB01
A1s smd TRANSISTOR
npo 121 j kck
TGS 816
DSP16A
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