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    4800 POWER MOSFET DATASHEET Search Results

    4800 POWER MOSFET DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4800 POWER MOSFET DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 4800 circuit

    Abstract: No abstract text available
    Text: PD - 94364F IRF6603 HEXFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Power MOSFET


    Original     		PDF IRF6603 94364F IRF6603 20-Jun-2012 mosfet 4800 circuit

    DirectFET

    Abstract: marking code V6 73 DIODE
    Text: PD - 94365E IRF6604 Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l HEXFET Power MOSFET


    Original     		PDF IRF6604 94365E IRF6604 20-Jun-2012 DirectFET marking code V6 73 DIODE

    Untitled

    Abstract: No abstract text available
    Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS


    Original     		PDF IRL6283MTRPbF J-STD-020Dâ

    Untitled

    Abstract: No abstract text available
    Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS


    Original     		PDF IRL6283MTRPbF J-STD-020Dâ

    Untitled

    Abstract: No abstract text available
    Text: IRF9383MPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V


    Original     		PDF IRF9383MPbF 315nC

    Untitled

    Abstract: No abstract text available
    Text: IRF9383MPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V


    Original     		PDF IRF9383MPbF 315nC

    Untitled

    Abstract: No abstract text available
    Text: IRF8304MPbF DirectFET Power MOSFET ‚ RoHS Compliant and Halogen Free  Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible  30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V l Ultra Low Package Inductance


    Original     		PDF IRF8304MPbF

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified


    Original     		PDF IRL6283MTRPbF J-STD-020Dâ

    Untitled

    Abstract: No abstract text available
    Text: IRF9395MPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits


    Original     		PDF IRF9395MPbF

    Untitled

    Abstract: No abstract text available
    Text: IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits


    Original     		PDF IRF9395MTRPbF JESD47Fâ J-STD-020Dâ

    IRF6775MPbF

    Abstract: No abstract text available
    Text: IRF6775MTRPbF DIGITAL AUDIO MOSFET Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI


    Original     		PDF IRF6775MTRPbF IRF6775MPbF

    IRF8302M

    Abstract: No abstract text available
    Text: IRF8302MPbF l l l l l l l l l l l RoHs Compliant and Halogen-Free  HEXFET Power MOSFET plus Schottky Diode ‚ Integrated Monolithic Schottky Diode Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 


    Original     		PDF IRF8302MPbF IRF8302M

    Untitled

    Abstract: No abstract text available
    Text: IRF8308MPbF DirectFET™ Power MOSFET ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible  30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V


    Original     		PDF IRF8308MPbF

    Untitled

    Abstract: No abstract text available
    Text: IRF8327SPbF l l l l l l l l l l DirectFET Power MOSFET ‚ RoHS Compliant and Halogen Free  Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible  30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V


    Original     		PDF IRF8327SPbF

    Untitled

    Abstract: No abstract text available
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features • • • • • • • 300 Volts 40 Amps 85 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


    Original     		PDF MSAFX40N30A

    4800 mosfet

    Abstract: mosfet 4800 1kw mosfet MC33091A 2N2222 MC33198 MC33198D MTP50N06 Application Report mosfet diagram 4800 power mosfet
    Text: MOTOROLA MC33198 SEMICONDUCTOR TECHNICAL DATA Datasheet HIGH SIDE TMOS DRIVER Automotive High Side TMOS Driver SILICON MONOLITHIC INTEGRATED CIRCUIT The MC33198D is a high side TMOS driver, dedicated for automotive applications. It is used in conjunction with an external power MOSFET for


    Original     		PDF MC33198 MC33198D 4800 mosfet mosfet 4800 1kw mosfet MC33091A 2N2222 MC33198 MTP50N06 Application Report mosfet diagram 4800 power mosfet

    23NM50N

    Abstract: STL23NM50N
    Text: STL23NM50N N-channel 500 V, 0.170 Ω typ., 14 A MDmesh II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — production data Features Type VDSS @ TJmax RDS on max ID STL23NM50N 550 V < 0.210 Ω 14 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case


    Original     		PDF STL23NM50N STL23NM50N 23NM50N

    ID100

    Abstract: MSAFX40N30A
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features • • • • • • • 300 Volts 40 Amps 85 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


    Original     		PDF MSAFX40N30A ID100 MSAFX40N30A

    Untitled

    Abstract: No abstract text available
    Text: AUIRF8736M2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET  •  V BR DSS RDS(on) typ. max. ID (Silicon Limited) Qg Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile


    Original     		PDF AUIRF8736M2TR

    Untitled

    Abstract: No abstract text available
    Text: IRF7171MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified Applications and Benefits Ideal for High Performance Isolated Converter Primary Switch Optimized for Synchronous Rectification RoHS Compliant, Halogen Free 


    Original     		PDF IRF7171MTRPbF

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET  Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications


    Original     		PDF IRF7480MTRPbF JESD47Fâ J-STD-020Dâ

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET  Application  Brushed motor drive applications  BLDC motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications


    Original     		PDF IRF7580MTRPbF IRF75onâ JESD47Fâ J-STD-020Dâ

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET  Application  Brushed motor drive applications  BLDC motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications


    Original     		PDF IRF7580MTRPbF IRF75 J-STD-020Dâ

    chn 714

    Abstract: No abstract text available
    Text: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features 300 Volts 40 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


    OCR Scan     		PDF MSAFX40N30A chn 714