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    47B DIODE Search Results

    47B DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    47B DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Datasheet AS3647/47B 1600mA High Current LED Flash Driver 2 Key Features 1 General Description High efficiency 4MHz fixed frequency DCDC Boost converter with soft start allows small coils The AS3647/47B is an inductive high efficient DCDC step up converter with two current sinks. The DCDC


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    PDF AS3647/47B 1600mA AS3647/47B 1600mA com/AS3647/47B

    Untitled

    Abstract: No abstract text available
    Text: BZW25-47B Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage56 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage47 I(PPM) Max.(A)Pk.Pulse Current30.5


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    PDF BZW25-47B Voltage56 Voltage47 Current30 Voltage81 StyleTO-220AC

    Untitled

    Abstract: No abstract text available
    Text: BZW50-47B Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage58 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage47 I(PPM) Max.(A)Pk.Pulse Current60.1


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    PDF BZW50-47B Voltage58 Voltage47 Current60 Voltage83

    47B diode

    Abstract: network resistor rcd RCD1647B RCD16-47B RCD1647B6 RCD16-47B6 SO20 SSOP20
    Text: RCD16-47B  Application Specific Discretes A.S.D.TM RCD NETWORK FOR BUS TERMINATION MAIN APPLICATIONS In any electronic equipment where a suitable bus termination is requiredto avoid signal reflectionsand distortions : PC and workstation computer Data-line analyzers


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    PDF RCD16-47B SSOP20 47B diode network resistor rcd RCD1647B RCD16-47B RCD1647B6 RCD16-47B6 SO20 SSOP20

    RCD1647B

    Abstract: RCD16-47B RCD1647B6 RCD16-47B6 SO20 SSOP20
    Text: RCD16-47B  Application Specific Discretes A.S.D.TM RCD NETWORK FOR BUS TERMINATION MAIN APPLICATIONS In any electronic equipment where a suitable bus termination is requiredto avoid signal reflectionsand distortions : PC and workstation computer Data-line analyzers


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    PDF RCD16-47B SSOP20 RCD1647B RCD16-47B RCD1647B6 RCD16-47B6 SO20 SSOP20

    Untitled

    Abstract: No abstract text available
    Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com


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    PDF AS3647/47B 1600mA AS3647/47B

    5B1 zener diode

    Abstract: zener 5B1 2B2 zener diode planar transistor 5B1 zener 4B7 15B zener diode 110B 150B BZX55B 2b7 zener diode
    Text: ZMM1B.ZMM200B SILICON PLANAR ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request. These diodes are also available in DO-35 case with the type


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    PDF ZMM200B LL-34 DO-35 BZX55B 5B1 zener diode zener 5B1 2B2 zener diode planar transistor 5B1 zener 4B7 15B zener diode 110B 150B BZX55B 2b7 zener diode

    Untitled

    Abstract: No abstract text available
    Text: SMD Zener Diodes Two Terminals - 3W 3.0 W Part No. Z3SMB6.8B Z3SMB7.5B Z3SMB8.2B Z3SMB8.7B Z3SMB9.1B Z3SMB10B Z3SMB11B Z3SMB12B Z3SMB13B Z3SMB14B Z3SMB15B Z3SMB16B Z3SMB17B Z3SMB18B Z3SMB19B Z3SMB20B Z3SMB22B Z3SMB24B Z3SMB25B Z3SMB27B Z3SMB28B Z3SMB30B Z3SMB33B


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    PDF Z3SMB10B Z3SMB11B Z3SMB12B Z3SMB13B Z3SMB14B Z3SMB15B Z3SMB16B Z3SMB17B Z3SMB18B Z3SMB19B

    2B2 zener diode

    Abstract: 5B1 zener diode zener 4B7 6b2 zener diode zener diode 4B3 zener 5B1 5B1 IR 2B2 zener zener 6b8 110B
    Text: ZMM 1B.ZMM200B SILICON PLANAR POWER ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request.


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    PDF ZMM200B LL-34 DO-35 BZX55B 2B2 zener diode 5B1 zener diode zener 4B7 6b2 zener diode zener diode 4B3 zener 5B1 5B1 IR 2B2 zener zener 6b8 110B

    2B2 zener diode

    Abstract: planar transistor 5B1 5B1 zener diode zener diode 4B3 zener 5B1 ZMM200B 2B2 zener zener 5B6 zener 6b8 110B
    Text: ZMM 1B.ZMM200B SILICON PLANAR ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener Cathode band voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request.


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    PDF ZMM200B LL-34 DO-35 BZX55B 2B2 zener diode planar transistor 5B1 5B1 zener diode zener diode 4B3 zener 5B1 ZMM200B 2B2 zener zener 5B6 zener 6b8 110B

    2B2 zener diode

    Abstract: zener 5B1 5B1 zener diode zener 4B7 zener 3b6 zener diode 4B3 ZMM15-B planar transistor 5B1 6b2 zener diode 12b zener
    Text: ZMM 1B.ZMM200B SILICON PLANAR POWER ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request.


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    PDF ZMM200B LL-34 DO-35 BZX55B 2B2 zener diode zener 5B1 5B1 zener diode zener 4B7 zener 3b6 zener diode 4B3 ZMM15-B planar transistor 5B1 6b2 zener diode 12b zener

    3015-6

    Abstract: 47B diode 74LS RCD16-47B S020 47B marking
    Text: I SGS-THOMSON RCD16-47B GilDlgtftiOtiLIgTOOKlKgi R-C-D TERM INATO R NETW ORKS T A R G E T S P E C IF IC A T IO N FEATURES □ Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot.


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    PDF RCD16-47B RCD16-47B 3015-6 47B diode 74LS S020 47B marking

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEUICOND SECTOR bSE T> m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H M3GES71H1D71 47b « H A S 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs June 1993 Package Features • 6A, -100V, RDS(on) • 0JS50Q


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    PDF FRM9130 M3GES71 H1D71 2N7307D, 2N7307R 2N7307H -100V, 0JS50Q T0-204AA 100KRAD

    Untitled

    Abstract: No abstract text available
    Text: E 1 • 7 ^ 2 3 7 G040D2b 47b ■ SGTH s G s-THOMSON SGS-THOMSON M 54H C 194 M 74H C 194 'T - H C - ö 'l'O S 4 BIT PIPO SHIFT REGISTER ■ HIGH SPEED tpo = 13 ns TYP. at V c c = 5V ■ LOW POWER DISSIPATION Ic e = 4 piA (MAX.) at TA = 2 5 °C ■ HIGH NOISE IM M UN ITY


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    PDF G040D2b 54/74LS194 54/74H REGIS102 M54/74HC194 CI040031

    ZENER 34b

    Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
    Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B


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    PDF CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B CMBZ5257B= ZENER 34b zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode

    Untitled

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CMDSH-3 SUPER-MINI SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage


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    PDF OD-323 100mA DDD177E

    ZENER 34b

    Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
    Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B


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    PDF CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B CMBZ5257B= CMBZ-5252B CMBZ-5253B CMBZ-5254B ZENER 34b 5252B 5255B zener diode 33B 43B MARKING 8f zener 40b marking diode 43b

    rf2001

    Abstract: RF2007 RF2005 rf2000 FL01
    Text: » m FAGOR S7E 345^5 D D G D ? n 754 IFGRS RF2001 . RF2007 „ FAGOR ELECTRONICS .Amp. Silicon Rectifier Diodes • Dimensions in nun. DO-15 Voltage 50 to 1.000 V. Plastic Current 2.0 A. at 55°C. Mounting instructions 1. Min. distance from body to soldering point,


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    PDF RF2001 RF2007 DO-15 34S132S 000D720 RF2000 rf2001 RF2007 RF2005 rf2000 FL01

    A479

    Abstract: r-14 a479
    Text: ESAG63-004 2 oa SCHOTTKY BARRIER DIODE • 4 ^ ^ : Features • 1ftVF Low V F m m Connection Diagram Super high speed sw itchin g. • 1 u - :t - High reliability by planer design. ■ fflìÉ : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics


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    PDF ESAG63-004 500ns, ESAC63-004 A479 r-14 a479

    CMBZ-5240B

    Abstract: No abstract text available
    Text: 'IL CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1= ANODE 2= NC 3 = CATHODE 3.0_ ~ 2.8 0.14 0.48 538 3 2.6 2.4 _1.02 o.ar 2.00_ 1.80 0.60 0.40 Marking CMBZ5230B 31B


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    PDF CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B CMBZ5257B= ma-5246B CMBZ-5247B CMBZ-5248B CMBZ-5249B CMBZ-5250B CMBZ-5240B

    Untitled

    Abstract: No abstract text available
    Text: V 3 7 v-OW K Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC4M U nit : mm Case : MTO-3P 5.0 =°3 40V 60A •T jl5 0 t; # P r r s m T ' / ^ V ì - ' i S bI 0.B5 ±a* 'M •S R *g •D C /D C □ v n - ÿ 9Wm, © © m S * - A . O Affiü • a s . iK-S ’ y im m


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    PDF S60SC4M DD3234 DDD3235

    Untitled

    Abstract: No abstract text available
    Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B


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    PDF CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B CMBZ-5252B CMBZ-5253B CMBZ-5254B CMBZ-5255B CMBZ-5256B

    erm 38b

    Abstract: 5252B
    Text: CMBZ52XX series CDIL SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun Pin configuration 1= ANODE 2 = NC 3 = CATHODE 3.0 2.8 0.14 0.48 0.38 3 2.6 2.4 — I- T •FT 1.02 I 0.89 2 .00 _ 0,60 0.40 1.80


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    PDF CMBZ52XX BZ5248B BZ5230B CMBZ5239B tMBZ-5250B CMBZ-5251B CMBZ-5252B CMBZ-5253B CMBZ-5254B erm 38b 5252B

    5251B

    Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
    Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B


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    PDF CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B CMBZ5257B= B3fl33cà CMBZ-5250B CMBZ-5251B 23fl33R4 5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G