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    470-860 MHZ POWER 5 W Search Results

    470-860 MHZ POWER 5 W Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    470-860 MHZ POWER 5 W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    linear amplifier 470-860

    Abstract: RPAP470860M05 470-860 mhz Power amplifier 5 w RF GAIN LTD
    Text: RPAP470860M05 Preliminary Solid State Broadband High Power Pallet Amplifier 470-860 MHz – 5W The RPAP470860M05 is a 5W pallet amplifier for the 470-860 MHz band. This Class A pallet amplifier utilizes three MOSFET gain stages providing typical power gain of 26 dB at 5 Watts


    Original     		PDF RPAP470860M05 RPAP470860M05 -54dB linear amplifier 470-860 470-860 mhz Power amplifier 5 w RF GAIN LTD

    J239 mosfet transistor

    Abstract: L1AB
    Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF374A MRF374A J239 mosfet transistor L1AB

    marking c14a

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a

    marking c14a

    Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001

    C14A

    Abstract: MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP
    Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A C14A MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP

    capacitor atc 470 pf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373ALR1 MRF373ALSR1 capacitor atc 470 pf

    NIPPON CAPACITORS

    Abstract: dvbt tantulum capacitor A114 A115 AN1955 C101 JESD22 MRF6P3300H MRF6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 NIPPON CAPACITORS dvbt tantulum capacitor A114 A115 AN1955 C101 JESD22 MRF6P3300H

    MRF377H

    Abstract: nippon capacitors J628 Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377H nippon capacitors J628 Nippon chemi

    L1A marking

    Abstract: MRF373A
    Text: MRF373A Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A MRF373ALR1 MRF373ALSR1 L1A marking

    mrf373al

    Abstract: Vj3640Y MRF373A
    Text: MRF373A Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A MRF373ALR1 MRF373ALSR1 mrf373al Vj3640Y

    marking WB4

    Abstract: NIPPON CHEMI nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377H marking WB4 NIPPON CHEMI nippon capacitors

    MRF373A

    Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
    Text: Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A MRF373ALR1 MRF373ALSR1 MRF373ALR1 MRF373A MRF373ALSR1 MRF373AS

    part marking information vishay HD 1

    Abstract: l1a marking MRF372R5
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372 part marking information vishay HD 1 l1a marking MRF372R5

    marking c14a

    Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 28rola,

    845 motherboard circuit

    Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 845 motherboard circuit DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard

    MRF377HR3

    Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377HR3 MRF377HR5 NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi

    845 motherboard circuit

    Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
    Text: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377/D MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 845 motherboard circuit 0603HC-10NXJB Coilcraft Rogers 3006 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5

    Untitled

    Abstract: No abstract text available
    Text: H J 9 H P -5 0 Cable Ordering Information Attenuation and Average Power 5" Standard High Power Cable HJ9HP-50 45 - 70 MHz, 1.06 VSW R, max. 8 7 - 108 MHz, 1.06 VSW R, max. over broadcast channel 170 - 230 MHz, 1.08 VSWR, max. over broadcast channel 470 - 860 MHz, 1.10 VSW R, max. over broadcast channel


    OCR Scan     		PDF HJ9HP-50 dB/100 dB/100m 3981A-1

    Untitled

    Abstract: No abstract text available
    Text: S G S - IH O M S O N SD1732 TDS595 5 7 . RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS


    OCR Scan     		PDF SD1732 TDS595) SD1732 0G7D723

    5q 1265 rf

    Abstract: DIODE aay 49
    Text: SGS-THOMSON 5 7 . SD1492 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • ■ i ■ ■ . ■ . ■ 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    OCR Scan     		PDF SD1492 SD1492 5q 1265 rf DIODE aay 49

    Untitled

    Abstract: No abstract text available
    Text: S G S -1 H 0 M S 0 N iig T G M O ig i 5 7 . S D 1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS > . . • . . . . . > 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION


    OCR Scan     		PDF SD1489 7TSTE37 0070S5D

    S595

    Abstract: 8L85 ATC100A
    Text: fZ 7 ^ 7 # . S G S -T H O M S O N O M Q m ê îE M n ! S D 1 7 3 2 T D S 5 9 5 RF & MICROWAVE TRANSISTO RS _ TV LINEAR APPLICATIONS • . ■ . . ■ . ■ . ■ 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR


    OCR Scan     		PDF SD1732 S595 8L85 ATC100A

    R3305

    Abstract: R3305 transistor linear amplifier 470-860 TPV698
    Text: MOTOROLA SC X S T R S / R MOTOROLA F 4bE D b 3 b 7 5 S 4 O D 'IS B m 2 • f l O T b ■ i SEM IC O N D U C T O R ■ TECHNICAL DATA TPV698 Advance Information The RF Line U H F Linear P o w e r T ra n sisto r 4 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR


    OCR Scan     		PDF b3b72S4 -r-33-05 TV05001) TPV698 R3305 R3305 transistor linear amplifier 470-860 TPV698