transistor MAR 826
Abstract: A Wideband hybrid coupled amplifier 470 - 860 MHz Wideband hybrid coupled amplifier BLV57 Philips 2222 344 capacitors NCO8101 Philips 2222 capacitor philips 2222 030 capacitor philips 111J
Text: APPLICATION NOTE A Wideband hybrid coupled amplifier 470 − 860 MHz with 2 balanced transistors BLV57 NCO8101 Philips Semiconductors A Wideband hybrid coupled amplifier (470 − 860 MHz) with 2 balanced transistors BLV57 CONTENTS 1 ABSTRACT 2 INTRODUCTION
|
Original
|
BLV57
NCO8101
SCA57
transistor MAR 826
A Wideband hybrid coupled amplifier 470 - 860 MHz
Wideband hybrid coupled amplifier
BLV57
Philips 2222 344 capacitors
NCO8101
Philips 2222
capacitor philips
2222 030 capacitor philips
111J
|
PDF
|
96-417-C323T
Abstract: IMD14 FMG12
Text: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576
|
Original
|
FMG12
IMD14
96-417-C323T)
96-470-IMD14)
96-417-C323T
IMD14
FMG12
|
PDF
|
2322-211
Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid BLV57 NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz
Text: APPLICATION NOTE A wide-band class-AB hybrid coupled amplifier 470 − 860 MHz with two balanced transistors BLV57 NCO8205 Philips Semiconductors A wide-band class-AB hybrid coupled amplifier Application Note (470 − 860 MHz) with two balanced transistors BLV57
|
Original
|
BLV57
NCO8205
BLV57
SCA57
2322-211
Wideband hybrid coupled amplifier 470 860 MHz
"capacitor philips"
capacitor philips
NCO8101
stripline hybrid
NCO8201
NCO8205
A Wideband hybrid coupled amplifier 470 - 860 MHz
|
PDF
|
PM7520
Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
Text: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION
|
Original
|
BLW32
BLW33
ECO7806
PM7520
RESISTOR CR25
RESISTOR pr37
RESISTOR CR25 philips
CR25 resistor
PM3260
HP8620
PR37 RESISTOR
blw32 s parameter
philips resistor CR25
|
PDF
|
linear amplifier 470-860
Abstract: PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables
Text: APPLICATION NOTE A wide-band linear power amplifier 470 − 860 MHz with two transistors BLW34 ECO7901 Philips Semiconductors A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS
|
Original
|
BLW34
ECO7901
SCA57
linear amplifier 470-860
PM3260
BLW34
HP8620C
HP86222A
an blw32 33
RESISTOR pr37
PR37 RESISTOR
HP8558B
enamelled copper wire tables
|
PDF
|
0021L
Abstract: No abstract text available
Text: e PTE 10049* 85 Watts, 470–860 MHz LDMOS Field Effect Transistor Description The 10049 is an internally matched, common source, n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts minimum
|
Original
|
K1206
UT-85-25
0021L
|
PDF
|
ericsson 10159
Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and
|
Original
|
UT-85-25
1-877-GOLDMOS
1301-PTF
ericsson 10159
PTF 10159
10159
atc 174
capacitor siemens 4700 35
G200
K1206
470-860 mhz Power amplifier w
UT85-25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULBM5SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL The ASI ULBM5SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. C FEATURES: • Common Emitter • PG = 8.5 dB at 5.0 W/470 MHz • Omnigold Metalization System
|
Original
|
ASI10681
|
PDF
|
ULBM2
Abstract: ASI10675
Text: ULBM2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: A • Common Base • PG = 10 dB at 2.0 W/470 MHz • Omnigold Metalization System
|
Original
|
ASI10675
ULBM2
ASI10675
|
PDF
|
ASI10680
Abstract: No abstract text available
Text: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: • Common Emitter • PG = 8.5 dB at 5.0 W/470 MHz • Omnigold Metalization System
|
Original
|
ASI10680
ASI10680
|
PDF
|
H2 SOT-89 RF amplifier
Abstract: GRM188R71H104KA01 sot-89 H3 uhf gp bjt START499D
Text: DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor Preliminary Data Features • Excellent thermal stability ■ Frequency: 430 - 470 MHz ■ Supply voltage: 3.6 V ■ Output power: 29 dBm ■ Power gain: 19 dB ■ Efficiency: 52 %
|
Original
|
DB-499D-470
START499D
DB-499D-470
H2 SOT-89 RF amplifier
GRM188R71H104KA01
sot-89 H3 uhf
gp bjt
START499D
|
PDF
|
ULBM2TE
Abstract: ic 4570 ASI10679
Text: ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE TO-39GE FEATURES: B C ØA • Common Emitter • PG = 8.0 dB at 2.0 W/470 MHz • Omnigold Metalization System
|
Original
|
O-39GE
ASI10679
ULBM2TE
ic 4570
ASI10679
|
PDF
|
ericsson 10159
Abstract: PTF10159 470-860 mhz Power amplifier w
Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power
|
Original
|
UT-85-25
1-877-GOLDMOS
1301-PTF
ericsson 10159
PTF10159
470-860 mhz Power amplifier w
|
PDF
|
MRF629
Abstract: No abstract text available
Text: MRF629 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF629 is Designed for UHF large signal, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE TO 205AD FEATURES: • Grounded Emitter • PG = 8.0 dB at 2.0 W/470 MHz • Omnigold Metalization System
|
Original
|
MRF629
MRF629
205AD
|
PDF
|
|
|
ULBM5SL
Abstract: Unelco "Unelco Mica" ASI10681
Text: ULBM5SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL The ASI ULBM5SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. C FEATURES: • Common Emitter • PG = 8.5 dB at 5.0 W/470 MHz • Omnigold Metalization System
|
Original
|
ASI10681
ULBM5SL
Unelco
"Unelco Mica"
ASI10681
|
PDF
|
ASI10681
Abstract: No abstract text available
Text: ULBM5SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: A • Common Emitter • PG = 8.5 dB at 5.0 W/470 MHz • Omnigold Metalization System
|
Original
|
|
PDF
|
ULBM2T
Abstract: ASI10676 transistor 335
Text: ULBM2T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2T is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE TO-39 FEATURES: • Common Emitter • PG = 6.0 dB at 2.0 W/470 MHz • Omnigold Metalization System B C
|
Original
|
ASI10676
ULBM2T
ASI10676
transistor 335
|
PDF
|
ASI10682
Abstract: ULBM10
Text: ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: A • Common Emitter • PG = 7.0 dB at 10 W/470 MHz • Omnigold Metalization System
|
Original
|
ULBM10
ULBM10
ASI10682
ASI10682
|
PDF
|
ULBM2SL
Abstract: ASI10678
Text: ULBM2SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L PILL FEATURES: • Common Emitter • PG = 10 dB at 2.0 W/470 MHz • Omnigold Metalization System
|
Original
|
ASI10678
ULBM2SL
ASI10678
|
PDF
|
TMF8901B
Abstract: d1413
Text: TMF8901B Semiconductor Si RF LDMOS Transistor Unit in mm SOT-223 □ Applications 6.5 - VHF and UHF wide band amplifier 3.0 □ Features 4 3.5 GP = 12.4 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz GP = 14.7 dB at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz
|
Original
|
TMF8901B
OT-223
TMF8901B
d1413
|
PDF
|
4700 IC
Abstract: ic 4700 20091
Text: e PTB 20091 30 Watts, 470–860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation
|
Original
|
1-877-GOLDMOS
1301-PTB
4700 IC
ic 4700
20091
|
PDF
|
ASI10683
Abstract: ULBM25 470 6L
Text: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 25 W/470 MHz • Omnigold Metalization System
|
Original
|
ULBM25
ULBM25
ASI10683
470 6L
|
PDF
|
3SK252
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) NF1 = 2.0 dB TYP. (f = 470 MHz) 2 GPS = 19.0 dB TYP. (f = 470 MHz)
|
Original
|
3SK252
3SK252
|
PDF
|
JX - 638
Abstract: 20190 UT85-25 UT-85-25 0280 212 010 microstrip
Text: e PTB 20190 175 Watts, 470–806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically
|
Original
|
G-200,
1-877-GOLDMOS
1301-PTB
JX - 638
20190
UT85-25
UT-85-25
0280 212 010
microstrip
|
PDF
|
